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Jo Y, Lee Y, Kwon J, Kim S, Ryu G, Yun S, Baek S, Ko H, Jung S. 3D active-matrix multimodal sensor arrays for independent detection of pressure and temperature. SCIENCE ADVANCES 2025; 11:eads4516. [PMID: 39823340 PMCID: PMC11740967 DOI: 10.1126/sciadv.ads4516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2024] [Accepted: 12/17/2024] [Indexed: 01/19/2025]
Abstract
Pressure and temperature sensing simultaneously and independently is crucial for creating electronic skin that replicates complex sensory functions of human skin. Thin-film transistor (TFT) arrays with sensors have enabled cross-talk-free spatial sensing. However, the thermal dependence of charge transport in semiconductors has resulted in interference between thermal and pressure stimuli. We develop multimodal sensor arrays based on three-dimensional integration of an active matrix to detect temperature and pressure independently. Our approach includes a calibrated compensation to decouple temperature and pressure signals. An individual pixel device consists of a TFT-based pressure sensor layered above a TFT-based temperature sensor. The detected temperature is used to compensate for the thermal effect on TFT-based pressure sensors. We develop large-area sensor arrays to enable accurate detection of two-dimensional pressure and temperature, leveraging these technologies to demonstrate advanced robotic grippers. The grippers stably grasp and lift a cup regardless of temperature, proving their possibility in skin-like electronic applications.
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Affiliation(s)
- Youngmin Jo
- Department of Convergence IT Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Youngoh Lee
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jimin Kwon
- Department of Electrical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Seongju Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Gyungin Ryu
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Soyoung Yun
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Sanghoon Baek
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Hyunhyub Ko
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sungjune Jung
- Department of Convergence IT Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
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Wang Y, Huang W, Li J, Liu S, Fu J, Wang L, Wang H, Li W, Xie L, Ling H, Huang W. Engineering Steep Subthreshold Swings in High-Performance Organic Field-Effect Transistor Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2406522. [PMID: 39479740 DOI: 10.1002/smll.202406522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2024] [Revised: 10/18/2024] [Indexed: 01/11/2025]
Abstract
Organic field-effect transistor (OFET)-based sensors have gained considerable attention for information perception and processing in developing artificial intelligent systems owing to their amplification function and multiterminal regulation. Over the last few decades, extensive research has been conducted on developing OFETs with steep subthreshold swings (SS) to achieve high-performance sensing. In this review, based on an analysis of the critical factors that are unfavorable for a steep SS in OFETs, the corresponding representative strategies for achieving steep SS are summarized, and the advantages and limitations of these strategies are comprehensively discussed. Furthermore, a bridge between SS and OFET sensor performance is established. Subsequently, the applications of OFETs with steep SS in sensor systems, including pressure sensors, photosensors, biochemical sensors, and electrophysiological signal sensors. Lastly, the challenges faced in developing OFET sensors with steep SS are discussed. This study provides insights into the design and application of high-performance OFET sensor systems.
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Affiliation(s)
- Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wanxin Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jiahao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shanshuo Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haotian Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
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Wang X, Zhang Z, Li P, Xu J, Zheng Y, Sun W, Xie M, Wang J, Pan X, Lei X, Wang J, Chen J, Chen Y, Wang SJ, Lei T. Ultrastable N-Type Semiconducting Fiber Organic Electrochemical Transistors for Highly Sensitive Biosensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400287. [PMID: 38433667 DOI: 10.1002/adma.202400287] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Revised: 02/27/2024] [Indexed: 03/05/2024]
Abstract
Organic electrochemical transistors (OECTs) have attracted increasing attention due to their merits of high transconductance, low operating voltage, and good biocompatibility, ideal for biosensors. However, further advances in their practical applications face challenges of low n-type performance and poor stability. Here, it is demonstrated that wet-spinning the commercially available n-type conjugated polymer poly(benzimidazobenzophenanthroline) (BBL) into highly aligned and crystalline fibers enhances both OECT performance and stability. Although BBL is only soluble in high-boiling-point strong acids, it can be wet-spun into high-quality fibers with adjustable diameters. The BBL fiber OECTs exhibit a record-high area-normalized transconductance (gm,A) of 2.40 µS µm-2 and over 10 times higher figure-of-merit (µC*) than its thin-film counterparts. More importantly, these fiber OECTs exhibit remarkable stability with no noticeable performance attenuation after 1500 cycles over 4 h operation, outperforming all previously reported n-type OECTs. The superior performance and stability can be attributed to shorter π-π stacking distance and ordered molecular arrangement in the fibers, endowing the BBL fiber OECT-based biosensors with outstanding sensitivity while keeping a miniaturized form factor. This work demonstrates that, beyond new material development, developing new fabrication technology is also crucial for addressing the performance and stability issues in n-type OECTs.
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Affiliation(s)
- Xiu Wang
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhi Zhang
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Peiyun Li
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingcao Xu
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yuting Zheng
- College of Engineering, Peking University, Beijing, 100871, P. R. China
| | - Wenxi Sun
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Mingyue Xie
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Juanrong Wang
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xiran Pan
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xun Lei
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Wang
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jupeng Chen
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yiheng Chen
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Shu-Jen Wang
- Department of Physics, Hong Kong Baptist University, Hong Kong, SAR, P. R. China
| | - Ting Lei
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
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Jiang X, Shi C, Wang Z, Huang L, Chi L. Healthcare Monitoring Sensors Based on Organic Transistors: Surface/Interface Strategy and Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308952. [PMID: 37951211 DOI: 10.1002/adma.202308952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 10/16/2023] [Indexed: 11/13/2023]
Abstract
Organic transistors possess inherent advantages such as flexibility, biocompatibility, customizable chemical structures, solution-processability, and amplifying capabilities, making them highly promising for portable healthcare sensor applications. Through convenient and diverse modifications at the material and device surfaces or interfaces, organic transistors allow for a wide range of sensor applications spanning from chemical and biological to physical sensing. In this comprehensive review, the surface and interface engineering aspect associated with four types of typical healthcare sensors is focused. The device operation principles and sensing mechanisms are systematically analyzed and highlighted, and particularly surface/interface functionalization strategies that contribute to the enhancement of sensing performance are focused. An outlook and perspective on the critical issues and challenges in the field of healthcare sensing using organic transistors are provided as well.
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Affiliation(s)
- Xingyu Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Cheng Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Zi Wang
- Suzhou Laboratory, 388 Ruoshui Road, Suzhou, 215123, P. R. China
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
| | - Lifeng Chi
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, P. R. China
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Zhang Y, Chen D, He W, Chen N, Zhou L, Yu L, Yang Y, Yuan Q. Interface-Engineered Field-Effect Transistor Electronic Devices for Biosensing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2306252. [PMID: 38048547 DOI: 10.1002/adma.202306252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 09/17/2023] [Indexed: 12/06/2023]
Abstract
Promising advances in molecular medicine have promoted the urgent requirement for reliable and sensitive diagnostic tools. Electronic biosensing devices based on field-effect transistors (FETs) exhibit a wide range of benefits, including rapid and label-free detection, high sensitivity, easy operation, and capability of integration, possessing significant potential for application in disease screening and health monitoring. In this perspective, the tremendous efforts and achievements in the development of high-performance FET biosensors in the past decade are summarized, with emphasis on the interface engineering of FET-based electrical platforms for biomolecule identification. First, an overview of engineering strategies for interface modulation and recognition element design is discussed in detail. For a further step, the applications of FET-based electrical devices for in vitro detection and real-time monitoring in biological systems are comprehensively reviewed. Finally, the key opportunities and challenges of FET-based electronic devices in biosensing are discussed. It is anticipated that a comprehensive understanding of interface engineering strategies in FET biosensors will inspire additional techniques for developing highly sensitive, specific, and stable FET biosensors as well as emerging designs for next-generation biosensing electronics.
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Affiliation(s)
- Yun Zhang
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Duo Chen
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Wang He
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Na Chen
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Liping Zhou
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Lilei Yu
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Yanbing Yang
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Quan Yuan
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
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Jeong S, Son SU, Kim J, Cho SI, Kang T, Kim S, Lim EK, Ko Park SH. Rapid and simultaneous multiple detection of a tripledemic using a dual-gate oxide semiconductor thin-film transistor-based immunosensor. Biosens Bioelectron 2023; 241:115700. [PMID: 37757509 DOI: 10.1016/j.bios.2023.115700] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Revised: 08/22/2023] [Accepted: 09/19/2023] [Indexed: 09/29/2023]
Abstract
The simultaneous infection with a tripledemic-simultaneous infection with influenza A pH1N1 virus (Flu), severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), and respiratory syncytial virus (RSV)-necessitates the development of accurate and fast multiplex diagnostic tests. The coronavirus disease 2019 (COVID-19) pandemic has emphasized the importance of virus detection. Field-effect transistor (FET)-based immuno-biosensors have a short detection time and do not require labeling or polymerase chain reaction. This study demonstrates the rapid, sensitive detection of influenza A pH1N1, SARS-CoV-2, and RSV using a multiplex immunosensor based on a dual-gate oxide semiconductor thin-film transistor (TFT), a type of FET. The dual-gate oxide TFT was modified by adjusting both top and bottom gate insulators to improve capacitive coupling to approximately 120-fold amplification, exhibiting a high pH sensitivity of about 10 V/pH. The dual-gate oxide TFT-based immunosensor detected the target proteins (hemagglutinin (HA) protein of Flu, spike 1 (S1) protein of SARS-CoV-2, and fusion protein of RSV) of each virus, with a limit of detection of approximately 1 fg/mL. Cultured viruses in phosphate-buffered saline or artificial saliva and clinical nasopharynx samples were detected in 1-μL sample volumes within 60 s. This promising diagnosis could be potentially as point-of-care tests to facilitate a prompt response to future pandemics with high sensitivity and multiplexed detection without pretreatment.
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Affiliation(s)
- Sehun Jeong
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seong Uk Son
- BioNanotechnology Research Center, Korea Research Institute of Bioscience and Biotechnology, 125 Gwahak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea; Department of Nanobiotechnology, Korea Research Institute of Bioscience and Biotechnology, School of Biotechnology, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
| | - Jingyu Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Seong-In Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Taejoon Kang
- BioNanotechnology Research Center, Korea Research Institute of Bioscience and Biotechnology, 125 Gwahak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea; School of Pharmacy, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sunjoo Kim
- Department of Laboratory Medicine, Gyeongsang National University Changwon Hospital, Changwon, 51472, Republic of Korea; Gyeongnam Center for Infectious Disease Control and Prevention, Changwon, 51154, Republic of Korea; Gyeongsang National University College of Medicine, Gyeongsang Institute of Health Sciences, Jinju, 52727, Republic of Korea
| | - Eun-Kyung Lim
- BioNanotechnology Research Center, Korea Research Institute of Bioscience and Biotechnology, 125 Gwahak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea; Department of Nanobiotechnology, Korea Research Institute of Bioscience and Biotechnology, School of Biotechnology, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea; School of Pharmacy, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
| | - Sang-Hee Ko Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
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