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Wang K, Wang H, Chen C, Li W, Wang L, Hu F, Gao F, Yang W, Wang Z, Chen S. High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23457-23469. [PMID: 37148254 DOI: 10.1021/acsami.3c02540] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Currently, the photodetectors (PDs) assembled by vertically aligned nanostructured arrays have attracted intensive interest owing to their unique virtues of low light reflectivity and rapid charge transport. However, in terms of the inherent limitations caused by numerous interfaces often existed within the assembled arrays, the photogenerated carriers cannot be effectively separated, thus weakening the performance of target PDs. Aiming at resolving this critical point, a high-performance ultraviolet (UV) PD with a single-crystal integrated self-supporting 4H-SiC nanohole arrays is constructed, which are prepared via the anode oxidation approach. As a result, the PD delivers an excellent performance with a high switching ratio (∼250), remarkable detectivity (6 × 1010 Jones), fast response (0.5 s/0.88 s), and excellent stability under 375 nm light illumination with a bias voltage of 5 V. Moreover, it has a high responsivity (824 mA/W), superior to those of most reported ones based on 4H-SiC. The overall high performance of the PDs could be mainly attributed to the synergistic effect of the SiC nanohole arrays' geometry, a whole single-crystal integrated self-supporting film without interfaces, established reliable Schottky contact, and incorporated N dopants.
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Affiliation(s)
- Kaitao Wang
- Institute of New Carbon Materials, Taiyuan University of Technology, Taiyuan City 030024, P. R. China
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
| | - Hulin Wang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
| | - Chunmei Chen
- College of Mechanical Engineering/Hangzhou Bay Automotive Engineering, Ningbo University of Technology, Ningbo 315336, P. R. China
| | - Weijun Li
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
| | - Lin Wang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
| | - Feng Hu
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
| | - Fengmei Gao
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
| | - Zhenxia Wang
- Institute of New Carbon Materials, Taiyuan University of Technology, Taiyuan City 030024, P. R. China
| | - Shanliang Chen
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo City 315211, P. R. China
- Zhejiang Institute of Tianjin University, Ningbo City 315211, P. R. China
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Liang F, Zhan L, Guo T, Wu X, Chu J. CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector. MICROMACHINES 2021; 12:1066. [PMID: 34577710 PMCID: PMC8471629 DOI: 10.3390/mi12091066] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/17/2021] [Revised: 08/28/2021] [Accepted: 08/30/2021] [Indexed: 01/28/2023]
Abstract
Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.
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Affiliation(s)
- Fang Liang
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Liangliang Zhan
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Tianyu Guo
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Junhao Chu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
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