Theoretical design and computational screening of precursors for atomic layer deposition

Machine learning-based exploration of molecular design descriptors for area-selective atomic layer deposition (AS-ALD) precursors

CONTEXT

Area-selective atomic layer deposition (AS-ALD) is a thin film deposition technique developed using conventional ALD by considering the surface chemical nature of the substrate. Selecting appropriate precursors is a critical step in developing an efficient AS-ALD process with high deposition selectivity. However, the current efficiency of research on viable AS-ALD precursors is limited because of the absence of theoretical design rules for precursor chemical structures. In this study, our objective is to propose molecular design principle for precursors for AS-ALD, particularly focusing on achieving high deposition selectivity of oxides on diverse substrates. Current preliminary results suggest that ML-based prediction model may provide a fundamental molecular-level understanding of the reactivity of metal oxide precursors, that can be useful for efficient selection of suitable precursors for AS-ALD.

METHODS

We employ density functional theory (DFT) calculations and machine learning (ML) techniques to analyze the relationship between the structure and the surface reactivity of the precursor. Considering DFT calculation data (M06L/def2-tzvp, Gaussian 09 and Orca 4.0) and information on precursor structures, artificial neural networks (ANN, neuralnet, R) are applied to identify critical descriptors of the AS-ALD process. Furthermore, we utilize this ANN model to predict precursor reactivity according to surface terminations.

Interplay between coordination sphere engineering and properties of nickel diketonate-diamine complexes as vapor phase precursors for the growth of NiO thin films

NiO-based films and nanostructured materials have received increasing attention for a variety of technological applications. Among the possible strategies for their fabrication, atomic layer deposition (ALD) and chemical vapor deposition (CVD), featuring manifold advantages of technological interest, represent appealing molecule-to-material routes for which a rational precursor design is a critical step. In this context, the present study is focused on the coordination sphere engineering of three heteroleptic Ni(II) β-diketonate-diamine adducts of general formula [NiL₂TMEDA] [L = 1,1,1-trifluoro-2,4-pentanedionate (tfa), 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionate (fod) or 2,2,6,6-tetramethyl-3,5-heptanedionate (thd), and TMEDA = N,N,N',N'-tetramethylethylenediamine]. Controlled variations in the diketonate structure are pursued to investigate the influence of steric hindrance and fluorination degree on the chemico-physical characteristics of the compounds. A multi-technique investigation supported by density functional calculations highlights that all complexes are air-insensitive and monomeric and that their thermal properties and fragmentation patterns are directly dependent on functional groups in the diketonate ligands. Preliminary thermal CVD experiments demonstrate the precursors' suitability for the obtainment of NiO films endowed with flat and homogeneous surfaces, paving the way to future implementation for CVD end-uses.

High-throughput virtual screening for organic electronics: a comparative study of alternative strategies

We present a review of the field of high-throughput virtual screening for organic electronics materials focusing on the sequence of methodological choices that determine each virtual screening protocol. These choices are present in all high-throughput virtual screenings and addressing them systematically will lead to optimised workflows and improve their applicability. We consider the range of properties that can be computed and illustrate how their accuracy can be determined depending on the quality and size of the experimental datasets. The approaches to generate candidates for virtual screening are also extremely varied and their relative strengths and weaknesses are discussed. The analysis of high-throughput virtual screening is almost never limited to the identification of top candidates and often new patterns and structure-property relations are the most interesting findings of such searches. The review reveals a very dynamic field constantly adapting to match an evolving landscape of applications, methodologies and datasets.

Newly designed compounds from scaffolds of known actives as inhibitors of survivin: computational analysis from the perspective of fragment-based drug design

Survivin is an apoptosis suppressing protein linked to different forms of cancer. As it stands, there are no approved drugs for the inhibition of survivin in cancer cells despite a number of promising compounds in clinical trials. This study designed a new set of compounds from fragments of active survivin inhibitors to potentiate their binding with survivin at BIR domain. Three hundred and five (305) fragments made from eight potent inhibitors of survivin were reconstructed to form a new set of compounds. The compounds were optimized using R group enumeration and bioisostere replacement after extensive docking analysis. The optimised compounds were filtered by a validated pharmacophore model to reveal how well they are aligned to the pharmacophore sites. Molecular docking of the well aligned compounds revealed the top-scoring compounds; and these compounds were compared with the eight inhibitors used as template for fragment-based design on the basis of binding affinity (rigid and flexible docking), predicted pIC50 and intermolecular interactions. The electronic behaviours (global descriptors, HOMO/LUMO, molecular electrostatic potential and Fukui functions) of newly designed compounds were calculated to investigate their reactivity and atomic sites prone to neutrophilic/electrophilic attack. The nine newly designed compounds had better rigid and flexible docking scores, free energy of binding and intermolecular interactions with survivin at BIR domain than the eight active inhibitors. Based on frontier molecular orbitals, OPE-3 was found to be the most reactive and less stable compound (0.13194 eV), followed by OPE-4 and OPE-9. The global descriptive parameters showed that OPE-3 had highest softness value (7.5245 eV) while OPE-8 recorded the maximum hardness value (0.08486 eV). The well-validated QSAR model also showed that OPE-3, OPE-7 and OPE-8 had the most significant bioactivity of all the inhibitors. This study thus provides new insight into the design of compounds capable of modulating the activity of survivin.

Supplementary Information

The online version contains supplementary material available at 10.1007/s40203-021-00108-8.

Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide

Atomic layer deposition (ALD) is a nanopreparation technique for materials and is widely used in the fields of microelectronics, energy and catalysis. ALD methods for metal sulfides, such as Al2S3 and Li2S, have been developed for lithium-ion batteries and solid-state electrolytes. In this work, using density functional theory calculations, the possible reaction pathways of the ALD of Al2S3 using trimethylaluminum (TMA) and H2S were investigated at the M06-2X/6-311G(d, p) level. Al2S3 ALD can be divided into two consecutive and complementary half-reactions involving TMA and H2S, respectively. In the TMA half-reaction, the methyl group can be eliminated through the reaction with the sulfhydryl group on the surface. This process is a ligand exchange reaction between the methyl and sulfhydryl groups via a four-membered ring transition state. TMA half-reaction with the sulfhydrylated surface is more difficult than that with the hydroxylated surface. When the temperature increases, the reaction requires more energy, owing to the contribution of the entropy. In the H2S half-reaction, the methyl group on the surface can further react with the H2S precursor via a four-membered ring transition state. The orientation of H2S and more molecules have minimal effect on the H2S half-reaction. The reaction involving H2S through a six-membered ring transition state is unfavorable. In addition, the methyl and sulfhydryl groups on the surface can both react with the adjacent sulfhydryl group on the subsurface to form and release CH4 or H2S in the two half-reactions. Furthermore, sulfhydryl elimination occurs more easily than methyl elimination on the surface. These findings for the TMA and H2S half-reactions of Al2S3 ALD may be used for studying precursor chemistry and improvements in the preparation of other metal sulfides for emerging applications.

The Early Steps of Molecule-to-Material Conversion in Chemical Vapor Deposition (CVD): A Case Study

Transition metal complexes with β-diketonate and diamine ligands are valuable precursors for chemical vapor deposition (CVD) of metal oxide nanomaterials, but the metal-ligand bond dissociation mechanism on the growth surface is not yet clarified in detail. We address this question by density functional theory (DFT) and ab initio molecular dynamics (AIMD) in combination with the Blue Moon (BM) statistical sampling approach. AIMD simulations of the Zn β-diketonate-diamine complex Zn(hfa)₂TMEDA (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA = N,N,N′,N′-tetramethylethylenediamine), an amenable precursor for the CVD of ZnO nanosystems, show that rolling diffusion of this precursor at 500 K on a hydroxylated silica slab leads to an octahedral-to-square pyramidal rearrangement of its molecular geometry. The free energy profile of the octahedral-to-square pyramidal conversion indicates that the process barrier (5.8 kcal/mol) is of the order of magnitude of the thermal energy at the operating temperature. The formation of hydrogen bonds with surface hydroxyl groups plays a key role in aiding the dissociation of a Zn-O bond. In the square-pyramidal complex, the Zn center has a free coordination position, which might promote the interaction with incoming reagents on the deposition surface. These results provide a valuable atomistic insight on the molecule-to-material conversion process which, in perspective, might help to tailor by design the first nucleation stages of the target ZnO-based nanostructures.

Toolbox for atomic layer deposition process development on high surface area powders

Atomic layer deposition (ALD) is an industrially applied technique for thin film deposition. The vast majority of processes target flat substrates rather than powders. For ALD on powders, new processes are needed, as different reaction conditions are required. Here, two setups are described in detail, which enhance the ALD process development for powders. The first setup described is capable of directly measuring the vapor pressure of a given precursor by a capacitance diaphragm gauge. Promising precursors can be pre-selected, and suitable precursor saturation temperatures can be determined. The second setup consists of four parallel reactors with individual temperature zones to screen the optimal ALD temperature window in a time efficient way. Identifying the precursor saturation temperature beforehand and subsequently performing the first ALD half cycle in the parallel setup at four different reactor temperatures simultaneously will drastically reduce process development times. Validation of both setups is shown for the well-known ALD precursors, trimethylaluminum to deposit aluminum oxide and diethyl zinc to deposit zinc oxide, both on amorphous silica powder.

Thermal and Plasma-Enhanced Atomic Layer Deposition of Yttrium Oxide Films and the Properties of Water Wettability

The atomic layer deposition (ALD) of yttrium oxide (Y₂O₃) is investigated using the liquid precursor Y(EtCp)₂(iPr-amd) as the yttrium source with thermal (H₂O) and plasma-enhanced (H₂O plasma and O₂ plasma) processes, respectively. Saturation is confirmed for the growth of the Y₂O₃ films with each investigated reactant with a similar ALD window from 150 to 300 °C, albeit with a different growth rate. All of the as-deposited Y₂O₃ films are pure and smooth and have a polycrystalline cubic structure. The as-deposited Y₂O₃ films are hydrophobic with water contact angles >90°. The water contact angle gradually increased and the surface free energy gradually decreased as the film thickness increased, reaching a saturated value at a Y₂O₃ film thickness of ∼20 nm. The hydrophobicity was retained during post-ALD annealed at 500 °C in static air for 2 h. Exposure to polar and nonpolar solvents influences the Y₂O₃ water contact angle. The reported ALD process for Y₂O₃ films may find potential applications in the field of hydrophobic coatings.

Growth Mechanism, Ambient Stability, and Charge Trapping Ability of Ti-Based Maleic Acid Hybrid Films by Molecular Layer Deposition

Ti-based maleic acid (MA) hybrid films were successfully fabricated by molecular layer deposition (MLD) using organic precursor MA and inorganic precursor TiCl₄. The effect of deposition temperature on the growth rate, composition, and bonding mode of hybrid thin films has been investigated systematically. With increasing temperature from 140 to 280 °C, the growth rate decreases from 1.42 to 0.16 Å per MLD cycle with basically unchanged composition ratio of C:O:Ti in the films. Fourier transform infrared spectra indicate that all hybrid films show preference for bidentate bonding mode. Further analyses of X-ray photoelectron spectroscopy and in situ quartz crystal microbalance elucidate that as-deposited MLD Ti-MA hybrid films consist of inorganic Ti-O-Ti units and organic-inorganic Ti-MA units. In addition, the density functional theory calculation was performed to investigate the possible reaction mechanism of the TiCl₄-MA MLD process, which is well consistent with experimental results. More importantly, upon comparison with the TiCl₄-fumaric acid MLD system, it is demonstrated that the cis- and trans-configurations of butenedioic acid influence the MLD growth, bonding mode, stability, and charging ability of MLD hybrid films. Ti-MA hybrid films exhibit better stability and charging ability than Ti-FA hybrid films, benefiting from the inorganic Ti-O-Ti units in the hybrid films.

High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor

An efficient process for thermal atomic layer deposition (ALD) of Ni film with high growth per cycle (GPC) value is developed in this study using an electron-rich compound (N,N,N',N'-tetramethylethylenediamine) (bis(2,4-pentanedionato)) nickel(ii) and anhydrous hydrazine as the reactants. The thermal properties and adsorption behavior of selected compounds were studied. Significantly, a high film GPC value of 2.1 Å per cycle for ALD was achieved, and the deposited film exhibited high purity, low resistivity and a smooth surface. We believe that such an efficient method for high GPC thermal ALD of Ni and even other transition metals will benefit ALD technology development.

Design of efficient mono-aminosilane precursors for atomic layer deposition of SiO2 thin films

The suitability of six mono(alkylamino)silane precursors for growing SiO₂ films via ALD is assessed with DFT calculations.