Precursors for chemical vapor deposition of tungsten oxide and molybdenum oxide

Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications

As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.

Chiral-at-Metal Racemization Unraveled for MX2 (a-chel)2 by means of a Computational Analysis of MoO2 (acnac)2

Octahedral chiral-at-metal complexes MX2 (a-chel)2 (a-chel=asymmetric chelate) can rearrange their ligands by four mechanisms known as the Bailar (B), Ray-Dutt (RD), Conte-Hippler (CH), and Dhimba-Muller-Lammertsma (DML) twists. Racemization involves their interconnections, which were computed for MoO2 (acnac)2 (acnac=β-ketoiminate) using density functional theory at ωB97x-D with the 6-31G(d,p) and 6-311G(2d,p) basis sets and LANL2DZ for molybdenum. Racemizing the cis(NN) isomer, being the global energy minimum with trans oriented imine groups, is a three step process (DML-CH-DML) that requires 17.4 kcal/mol, while all three cis isomers (cis(NN), cis(NO), and cis(OO)) interconvert at ≤17.9 kcal/mol. The B and RD twists are energetically not competitive and neither are the trans isomers. The interconnection of all enantiomeric minima and transition structures is summarized in a graph that also visualizes valley ridge inflection points for two of the three CH twists. Geometrical features of the minima and twists are given. Lastly, the influence of N-substitution on the favored racemization pathway is evaluated. The present comprehensive study serves as a template for designing chiral-at-metal MX2 (a-chel)2 catalysts that may retain their chiral integrity.

Molybdenum(III) Amidinate: Synthesis, Characterization, and Vapor Phase Growth of Mo-Based Materials

The synthesis, characterization, and thermogravimetric analysis of tris(N,N'-di-isopropylacetamidinate)molybdenum(III), Mo(iPr-AMD)₃, are reported. Mo(iPr-AMD)₃ is a rare example of a homoleptic mononuclear complex of molybdenum(III) and fills a longstanding gap in the literature of transition metal(III) trisamidinate complexes. Thermogravimetric analysis (TGA) reveals excellent volatilization at elevated temperatures, pointing to potential applications as a vapor phase precursor for higher temperature atomic layer deposition (ALD), or chemical vapor deposition (CVD) growth of Mo-based materials. The measured TGA temperature window was 200-314 °C for samples in the 3-20 mg range. To validate the utility of Mo(iPr-AMD)₃, we demonstrate aerosol-assisted CVD growth of MoO₃ from benzonitrile solutions of Mo(iPr-AMD)₃ at 500 °C using compressed air as the carrier gas. The resulting films are characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. We further demonstrate the potential for ALD growth at 200 °C with a Mo(iPr-AMD)₃/Ar purge/300 W O₂ plasma/Ar purge sequence, yielding ultrathin films which retain a nitride/oxynitride component. Our results highlight the broad scope utility and potential of Mo(iPr-AMD)₃ as a stable, high-temperature precursor for both CVD and ALD processes.

Guaiacol to Aromatics: Efficient Transformation over In Situ-Generated Molybdenum and Tungsten Oxides

The development of catalysts for the hydrodeoxygenation of bio-based feedstocks is an important step towards the production of fuels and chemicals from biomass. This paper describes in situ-generated bulk molybdenum and tungsten oxides in the hydrodeoxygenation of the lignin-derived compound guaiacol. The catalysts obtained were studied using powder X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transition electron microscopy, diffuse reflectance infrared Fourier transform spectroscopy, and Raman spectroscopy. The use of metal carbonyls as precursors was shown to promote the formation of amorphous molybdenum oxide and crystalline tungsten phosphide under hydrodeoxygenation conditions. The catalysts’ activity was investigated under various reaction conditions (temperature, H2 pressure, solvent). MoOx was more active in the partial and full hydrodeoxygenation of guaiacol at temperatures of 200–380 °C (5 MPa H2, 6 h). However, cyclohexane, which is an undesirable product, was formed in significant amounts using MoOx (5 MPa H2, 6 h), while WOx was more selective to aromatics. When using dodecane as a solvent (380 °C, 5 MPa H2, 6 h), the benzene-toluene-xylenes fraction was obtained with a 96% yield over the WOx catalyst.

CVD Grown Tungsten Oxide for Low Temperature Hydrogen Sensing: Tuning Surface Characteristics via Materials Processing for Sensing Applications

The intrinsic properties of semiconducting oxides having nanostructured morphology are highly appealing for gas sensing. In this study, the fabrication of nanostructured WO₃ thin films with promising surface characteristics for hydrogen (H₂ ) gas sensing applications is accomplished. This is enabled by developing a chemical vapor deposition (CVD) process employing a new and volatile tungsten precursor bis(diisopropylamido)-bis(tert-butylimido)-tungsten(VI), [W(N^t Bu)₂ (Nⁱ Pr₂ )₂ ]. The as-grown nanostructured WO₃ layers are thoroughly analyzed. Particular attention is paid to stoichiometry, surface characteristics, and morphology, all of which strongly influence the gas-sensing potential of WO₃ . Synchrotron-based ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), X-ray photoelectron emission microscopy (XPEEM), low-energy electron microscopy (LEEM) and 4-point van der Pauw (vdP) technique made it possible to analyze the surface chemistry and structural uniformity with a spatially resolved insight into the chemical, electronic and electrical properties. The WO₃ layer is employed as a hydrogen (H₂ ) sensor within interdigitated mini-mobile sensor architecture capable of working using a standard computer's 5 V 1-wirebus connection. The sensor shows remarkable sensitivity toward H₂ . The high, robust, and repeatable sensor response (S) is attributed to the homogenous distribution of the W⁵⁺ oxidation state and associated oxygen vacancies, as shown by synchrotron-based UPS, XPS, and XPEEM analysis.

Molybdenum(IV) dithiocarboxylates as single-source precursors for AACVD of MoS2 thin films

Tetrakis(dithiocarboxylato)molybdenum(IV) complexes of the type Mo(S2CR)4 (R = Me, Et, iPr, Ph) were synthesized, characterized, and prescreened as precursors for aerosol assisted chemical vapor deposition (AACVD) of MoS2 thin films. The thermal behavior of the complexes as determined by TGA and GC-MS was appropriate for AACVD, although the complexes were not sufficiently volatile for conventional CVD bubbler systems. Thin films of MoS2 were grown by AACVD at 500 °C from solutions of Mo(S2CMe)4 in toluene. The films were characterized by GIXRD diffraction patterns which correspond to a 2H-MoS2 structure in the deposited film. Mo-S bonding in 2H-MoS2 was further confirmed by XPS and EDS. The film morphology, vertically oriented structure, and thickness (2.54 μm) were evaluated by FE-SEM. The Raman E12g and A1g vibrational modes of crystalline 2H-MoS2 were observed. These results demonstrate the use of dithiocarboxylato ligands for the chemical vapor deposition of metal sulfides.