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Zhang X, Zhou C, Shi S, Jing X, Zheng Z, Yuan W. Mechanism insight into double S-scheme heterojunctions and atomic vacancies with tunable band structures for notably enhanced light-driven enrofloxacin decomposition. J Colloid Interface Sci 2024; 662:614-626. [PMID: 38367579 DOI: 10.1016/j.jcis.2024.02.106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 02/10/2024] [Accepted: 02/12/2024] [Indexed: 02/19/2024]
Abstract
Building narrow band gap semiconductors and fast separation of photogenerated electron-hole (e--h+) structures are of great significance for photocatalytic process. In this contribution, the CeO2-x/C3-yN4/Ce(CO3)(OH) double S-scheme heterojunctions with atomic vacancies tunable band gap (2.54 eV) have been designed and fabricated as a boost photocatalyst for enrofloxacin (ENR) photodegradation. Compared with the control samples, the experimental results indicate that the typical sample (CeO2-x/C3-yN4/Ce(CO3)(OH)-2) achieves the highest ENR photodegradation efficiency (93.6 %) in 240 min under a pH of 6, and the possible photodegradation pathways are also proposed. The superior performance is ascribed to the CeO2-x/C3-yN4/Ce(CO3)(OH) double S-scheme heterojunctions for selective recombination of photogenerated electrons with weak-reduction ability in conduction band (CB) of CeO2-x, C3-yN4 and the photogenerated holes with weak-oxidation nature in valance band (VB) of C3-yN4, Ce(CO3)(OH), which increase the retention rate of photogenerated electrons in CB of Ce(CO3)(OH) and photogenerated holes in VB of CeO2-x to degrade ENR. This is the first systematic study of CeO2-x/C3-yN4/Ce(CO3)(OH) double S-scheme heterojunctions for ENR photodegradation.
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Affiliation(s)
- Xingyu Zhang
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou 341119, People's Republic of China; School of Rare Earths, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Chenliang Zhou
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou 341119, People's Republic of China; School of Rare Earths, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Shaoyuan Shi
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou 341119, People's Republic of China; School of Rare Earths, University of Science and Technology of China, Hefei 230026, People's Republic of China; Jiangxi Province Key Laboratory of Cleaner Production of Rare Earths, Ganzhou 341119, People's Republic of China; Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xuequan Jing
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou 341119, People's Republic of China; School of Rare Earths, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Zhi Zheng
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou 341119, People's Republic of China; School of Rare Earths, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Wenjing Yuan
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou 341119, People's Republic of China; School of Rare Earths, University of Science and Technology of China, Hefei 230026, People's Republic of China; Jiangxi Province Key Laboratory of Cleaner Production of Rare Earths, Ganzhou 341119, People's Republic of China.
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