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Meng X, Singh A, Juneja R, Zhang Y, Tian F, Ren Z, Singh AK, Shi L, Lin JF, Wang Y. Pressure-Dependent Behavior of Defect-Modulated Band Structure in Boron Arsenide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2001942. [PMID: 33015896 DOI: 10.1002/adma.202001942] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2020] [Revised: 09/02/2020] [Indexed: 06/11/2023]
Abstract
The recent observation of unusually high thermal conductivity exceeding 1000 W m-1 K-1 in single-crystal boron arsenide (BAs) has led to interest in the potential application of this semiconductor for thermal management. Although both the electron/hole high mobilities have been calculated for BAs, there is a lack of experimental investigation of its electronic properties. Here, a photoluminescence (PL) measurement of single-crystal BAs at different temperatures and pressures is reported. The measurements reveal an indirect bandgap and two donor-acceptor pair (DAP) recombination transitions. Based on first-principles calculations and time-of-flight secondary-ion mass spectrometry results, the two DAP transitions are confirmed to originate from Si and C impurities occupying shallow energy levels in the bandgap. High-pressure PL spectra show that the donor level with respect to the conduction band minimum shrinks with increasing pressure, which affects the release of free carriers from defect states. These findings suggest the possibility of strain engineering of the transport properties of BAs for application in electronic devices.
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Affiliation(s)
- Xianghai Meng
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Akash Singh
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Rinkle Juneja
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Yanyao Zhang
- Department of Geological Sciences, Jackson School of Geosciences, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Fei Tian
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX, 77204, USA
| | - Zhifeng Ren
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX, 77204, USA
| | - Abhishek K Singh
- Department of Geological Sciences, Jackson School of Geosciences, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Li Shi
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Jung-Fu Lin
- Department of Geological Sciences, Jackson School of Geosciences, The University of Texas at Austin, Austin, TX, 78712, USA
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Yaguo Wang
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
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