Adsorption studies of trimethyl amine and n-butyl amine vapors on stanene nanotube molecular device – A first-principles study

Recent Advances in Tin: From Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac Semimetal

An atomic layer of tin in a buckled honeycomb lattice, termed stanene, is a promising large-gap two-dimensional topological insulator for realizing room-temperature quantum-spin-Hall effect and therefore has drawn tremendous interest in recent years. Because the electronic structures of Sn allotropes are sensitive to lattice strain, e.g. the semimetallic α-phase of Sn can transform into a three-dimensional topological Dirac semimetal under compressive strain, recent experimental advances have demonstrated that stanene layers on different substrates can also host various electronic properties relating to in-plane strain, interfacial charge transfer, layer thickness, and so on. Thus, comprehensive understanding of the growth mechanism at the atomic scale is highly desirable for precise control of such tunable properties. Herein, the fundamental properties of stanene and α-Sn films, recent achievements in epitaxial growth, challenges in high-quality synthesis, and possible applications of stanene are discussed.

Detection of trace level of hazardous phosgene gas on antimonene nanotube based on first-principles method

Using first-principles calculations, electronic characteristics and geometrical stability of pure and Sn substituted armchair β - antimonene nanotube (SbNT) is explored. The adsorption behavior of phosgene (COCl₂) on SbNT is studied using ab initio method. Also, the effect of base material sensitivity with the influence of substitution of Sn dopant is studied. The SbNT energy band structure gets altered upon exposure to the COCl₂ gas molecules. The density-of-states (DOS) spectrum gives the precision on the transfer of charge during the interaction of COCl₂ gas on SbNT material. Moreover, the phosgene molecules interaction on SbNT results in the variation of adsorption energy around -0.578 to -1.364 eV. Further, the average band gap changes are detected in the range of 1.75-19.3% for pristine SbNT, and 192.31-369.23% for Sn substituted SbNT material. The findings suggest that the physisorption of phosgene gas on Sn substituted SbNT is found to be more significant when compared to pristine SbNT. The current work shows that Sn substituted SbNT as a good base material to probe phosgene gas molecules.