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Tao A, Jiang Y, Chen S, Zhang Y, Cao Y, Yao T, Chen C, Ye H, Ma XL. Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film. Nat Commun 2024; 15:6099. [PMID: 39030193 PMCID: PMC11271601 DOI: 10.1038/s41467-024-50431-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 07/10/2024] [Indexed: 07/21/2024] Open
Abstract
Domain walls affect significantly ferroelectric and magnetic properties of magnetoelectric multiferroics. The stereotype is that the ferroelectric polarization will reduce at the domain walls due to the incomplete shielding of depolarization field or the effects of gradient energy. By combining transmission electron microscopy and first-principles calculations, we demonstrate that the ferroelectric polarization of tail-to-tail 180° domain walls in ε-Fe2O3 is regulated by the bound charge density. A huge enhancement (43%) of ferroelectric polarization is observed in the type I domain wall with a low bound charge density, while the ferroelectric polarization is reduced to almost zero at the type II domain wall with a high bound charge density. The magnetic coupling across the type I and type II ferroelectric domain walls are antiferromagnetic and ferromagnetic, respectively. Revealing mechanisms for enhancing ferroelectric polarization and magnetic behaviors at ferroelectric domain walls may promote the fundamental research and potential applications of magnetoelectric multiferroics.
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Affiliation(s)
- Ang Tao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Yixiao Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Shanshan Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Yuqiao Zhang
- Institute of Quantum and Sustainable Technology (IQST), School of Chemistry and Chemical Engineering, Jiangsu University, 212013, Zhenjiang, Jiangsu, China
- Foshan (Southern China) Institute for New Materials, 528200, Foshan, Guangdong, China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016, Shenyang, China
| | - Tingting Yao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Chunlin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China.
- Jihua Lab, 528251, Foshan, China.
| | | | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China.
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
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