Interface dipole at nickel oxide surface to enhance the photovoltage of perovskite solar cells

Efficient Air-Processed MA-Free Perovskite Solar Cells by SH-Based Silane Interface Modification

Air-processed perovskite solar cells (PSCs) with high photoelectric conversion efficiency (PCE) can not only further reduce the production cost but also promote its industrialization. During the preparation of the PSCs in ambient air, the contact of the buried interface not only affects the crystallization of the perovskite film but also affects the interface carrier transport, which is directly related to the performance of the device. Here, we optimize the buried interface by introducing 3-mercaptopropyltrimethoxysilane (MPTMS, (CH3O)3Si(CH2)3SH) on the nickel oxide (NiOx) surface. The crystallization of the perovskite film is improved by enhancing surface hydrophobicity; besides, the SH-based functional group of MPTMS passivates the uncoordinated lead at the interface, which effectively reduces the defects at the bottom interface of perovskite and inhibits the nonradiative recombination at the interface. Moreover, the energy level between the NiOx layer and the perovskite layer is better matched. Based on multiple functions of MPTMS modification, the open circuit voltage of the device is obviously improved, and efficient air-processed methylamine-free (MA-free) PSCs are realized with PCE reaching 21.0%. The device still maintains the initial PCE of 85% after 1000 h aging in the glovebox. This work highlights interface modification in air-processed MA-free PSCs to promote the industrialization of PSCs.