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Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection. BIOSENSORS 2022; 12:bios12020115. [PMID: 35200375 PMCID: PMC8869653 DOI: 10.3390/bios12020115] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2022] [Revised: 02/10/2022] [Accepted: 02/11/2022] [Indexed: 12/22/2022]
Abstract
Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire length and number with biomolecule detection. The experimental results revealed that the sensor with a 3 µm nanowire exhibited high sensitivity in detecting low concentrations of HBsAg. However, the sensor reached saturation when the biomolecule concentration exceeded 800 fg/mL. Sensors with 1.6 and 5 µm nanowires exhibited favorable linear sensing ranges at concentrations from 800 ag/mL to 800 pg/mL. The results regarding the number of nanowires revealed that the use of few nanowires in transistor sensors increases sensitivity. The results demonstrate the effects of nanowire dimensions on the silicon NWFET biosensors.
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Zhao W, Hu J, Liu J, Li X, Sun S, Luan X, Zhao Y, Wei S, Li M, Zhang Q, Huang C. Si nanowire Bio-FET for electrical and label-free detection of cancer cell-derived exosomes. MICROSYSTEMS & NANOENGINEERING 2022; 8:57. [PMID: 35655901 PMCID: PMC9151647 DOI: 10.1038/s41378-022-00387-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 03/17/2022] [Accepted: 04/13/2022] [Indexed: 05/11/2023]
Abstract
Exosomes are highly important in clinical diagnosis due to their high homology with their parental cells. However, conventional exosome detection methods still face the challenges of expensive equipment, low sensitivity, and complex procedures. Field effect transistors (FETs) are not only the most essential electronic component in the modern microelectronics industry but also show great potential for biomolecule detection owing to the advantages of rapid response, high sensitivity, and label-free detection. In this study, we proposed a Si nanowire field-effect transistor (Si-NW Bio-FET) device chemically modified with specific antibodies for the electrical and label-free detection of exosomes. The Si-NW FETs were fabricated by standard microelectronic processes with 45 nm width nanowires and packaged in a polydimethylsiloxane (PDMS) microfluidic channel. The nanowires were further modified with the specific CD63 antibody to form a Si-NW Bio-FET. The use of the developed Si-NW Bio-FET for the electrical and label-free detection of exosomes was successfully demonstrated with a limit of detection (LOD) of 2159 particles/mL. In contrast to other technologies, in this study, Si-NW Bio-FET provides a unique strategy for directly quantifying and real-time detecting exosomes without labeling, indicating its potential as a tool for the early diagnosis of cancer.
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Affiliation(s)
- Wenjie Zhao
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Jiawei Hu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Information Science and Technology, North China University of Technology, Beijing, 100144 People’s Republic of China
| | - Jinlong Liu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Xin Li
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Sheng Sun
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Xiaofeng Luan
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
| | - Yang Zhao
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Shuhua Wei
- School of Information Science and Technology, North China University of Technology, Beijing, 100144 People’s Republic of China
| | - Mingxiao Li
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Qingzhu Zhang
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
| | - Chengjun Huang
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 People’s Republic of China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing, 100049 People’s Republic of China
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