Theoretical study on functionalized anthracene and tetraceneas starting species to produce promising semiconductor materials

Cross-over from pyrene to acene optical and electronic properties: a theoretical investigation of a series of pyrene derivatives fused with N-, S, and O-containing heterocycles

Pyrene and acene derivatives are an important source of materials for optoelectronic device applications both as emitters and organic semiconductors. The mobility of major charge carriers is correlated with the coupling constants of the respective major charge carrier as well as the relaxation energies. Herein, we have applied range-separated density functionals for the estimation of said values. A series of five alkylated derivatives of pyrene laterally extended by heteroaromatic or phenyl groups were explored and contrasted to nascent pyrene, alkylated pyrene and tetracene. The ground state geometries along with absorption properties and relaxation energies are presented as well as a discussion of the suitability of the material toward hole and electron transport materials.

Possible NLO response and electrical/charge transfer capabilities of natural anthraquinones as p-type organic semiconductors: a DFT approach

CONTEXT

Organic semiconductors (OSCs) have attracted a great deal of interest in recent days. There are various types of OSCs, among which small molecules have various inherent benefits. Further research is needed to advance this new kind of material because the field is still developing, and the current focus is on creating small molecules that exist naturally for OSCs. OSCs with nonlinear optical (NLO) characteristics offer a significant advantage over others. Thus, this study theoretically investigates naturally occurring anthraquinones such as chrysophanol and rhein as potential OSCs, as well as their NLO properties. The calculated properties include the ionization potential (IP), electron affinity (EA), and bandgap (Eg). The FMO energy levels together with the Eg, IP (8.17-8.53 eV), and EA (1.87-2.44 eV) suggest the semiconductor nature of the studied compounds. The calculated values of reorganization energy (λ) and transfer integrals (V) suggest the p-type character of both molecules. Rhein has the lowest λh (0.19 eV) and Eg (3.28 eV) and the highest Vh, predominantly because of its better p-type character. The polarizability increases due to the presence of an electron-withdrawing substituent, leading to better NLO performance for Rhein, which is supported by its lower LUMO and Eg values.

METHODS

The studied molecules were optimized with the DFT/B3LYP-GD3/6-31+G(d,p) method using Gaussian 16 software. The crystal structure was simulated with Materials Studio 7.0, and the V values were calculated with the ADF package. The CDD and DOS plots were obtained with the Multiwfn 3.8 program.

Effect of steric hindrance and number of substituents on the transfer and interface properties of Y-shaped hole-transporting materials for perovskite solar cells

Alkyl sulfoxide groups were introduced into the branch chain terminals of a hole-transporting material (HTM) Z34 with different numbers and positions to design four new Y-shaped HTMs: ZT1, ZT2, ZT3 and ZT4. The effects of steric hindrance and number of substituents on the transfer and interface properties of the Y-shaped HTMs were investigated theoretically. Calculations reveal that the introduction of alkyl sulfoxide increases the distribution of intramolecular holes and orbital overlap between the HOMOs of the dimers. The electronic coupling was greatly improved owing to the increased distribution of holes and orbital overlap. ZT1 shows small steric hindrance when one alkyl sulfoxide is introduced into the top branch chain, which leads to translation π-π stacking. ZT2 and ZT4 show slightly greater steric hindrance when two or four alkyl sulfoxide groups are introduced into the side branch chains, which leads to face-to-face stacking. While ZT3 shows large steric hindrance when three alkyl sulfoxide groups are introduced into the top and side branch chains, which causes head-to-head stacking. With the increase in number of alkyl sulfoxide groups, the steric hindrance of the molecule increases and the hole mobility decreases. ZT1 achieves the highest hole mobility (2.63 × 10-2 m2 V-1 s-1) that is two orders of magnitude higher than that of Z34 (1.36 × 10-4 m2 V-1 s-1) owing to the optimal balance between the number of alkyl sulfoxide groups and steric hindrance. The HTM/CH3NH3PbI3 adsorbed system was also simulated to characterize the interface properties. Enhanced interface interaction was achieved in the HTM/perovskite systems of ZT2 and ZT3. The orbital distribution of the HTM/perovskite cluster indicates that the new HTMs can promote hole migration and prevent internal electron-hole recombination. The present work not only evaluates the reliable relationship between the structure and properties of new HTMs, but also provides a valuable design strategy for efficient Y-shaped HTMs.