Electrochemical field-effect transistors of octathio[8]circulene robust thin films with ionic liquids

A Novel Quasi-Planar Two-dimensional Carbon Sulfide with Negative Poisson's Ratio and Dirac Fermions

In the present study, a novel and unconventional two-dimensional (2D) material with Dirac electronic features has been designed using sulflower with the help of density functional theory methods and first principles calculations. This 2D material comprises of hetero atoms (C, S) and belongs to the tetragonal lattice with P4 /nmm space group. Scrutiny of the results show that the 2D nanosheet exhibits a nanoporous wave-like geometrical structure. Quantum molecular dynamics simulations and phonon mode analysis emphasize the dynamical and thermal stability. The novel 2D nanosheet is an auxetic material with an anisotropy in the in-plane mechanical properties. Both composition and geometrical features are completely different from the conditions necessary for the formation of Dirac cones in graphene. However, the presence of semi-metallic nature, linear band dispersion relation, massive fermions and massless Dirac fermions are observed in the novel 2D nanosheet. The massless Dirac fermions exhibit highly isotropic Fermi velocities (vf =0.68×106  m/s) along all crystallographic directions. The zero-band gap semi metallic features of the novel 2D nanosheet are perturbative to the electric field and external strain.

Electronic excitation spectra of organic semiconductor/ionic liquid interface by electrochemical attenuated total reflectance spectroscopy

The interface of organic semiconductor films is of particular importance with respect to various electrochemical devices such as transistors and solar cells. In this study, we developed a new spectroscopic system, namely electrochemical attenuated total reflectance ultraviolet (EC-ATR-UV) spectroscopy, which can access the interfacial area. Ionic liquid-gated organic field-effect transistors (IL-gated OFETs) were successfully fabricated on the ATR prism. Spectral changes of the organic semiconductor were then investigated in relation to the gate voltage application and IL species, and the magnitude of spectral changes was found to correlate positively with the drain current. Additionally, the Stark shifts of not only the organic semiconductor, but also of the IL on the organic semiconductor films were detected. This new method can be applied to other electrochemical devices such as organic thin film solar cells, in which the interfacial region is crucial to their functioning.

Hetero[8]circulenes: synthetic progress and intrinsic properties

Synthetic route for hetero[8]circulenes are classified into the annulative construction of eight-membered ring and the peripheral ring fusion of eight-membered ring. Post-transformation enables the tuning of structural features and electronic nature.

Relations between the aromaticity and magnetic dipole transitions in the electronic spectra of hetero[8]circulenes

Magnetically induced current densities have been calculated at the second-order Møller-Plesset perturbation theory (MP2) level for seven hetero[8]circulenes and their dicationic and dianionic forms. Calculations of the magnetic dipole transition moments have also been carried out at the algebraic diagrammatic construction (ADC(2)) and the second-order approximate coupled-cluster (CC2) levels. The calculations show that the degree of aromaticity and the size of the magnetic dipole transition moment of the lowest magnetic-dipole allowed excited state are related. We show that neutral hetero[8]circulenes are weakly antiaromatic when the first excited state with a large magnetic dipole transition moment of 10-16 a.u. lies at high energies (∼2.8-3.5 eV). For the dications, this transition often lies at much lower energies. Hetero[8]circulene dications with large magnetic dipole transition moments are strongly antiaromatic. The lowest excited states of the hetero[8]circulene dianions have very small magnetic dipole transition moments implying that they are aromatic.

Effects of the ether oxygen atom in alkyl side chains on the physical properties of piperidinium ionic liquids

Various types of piperidinium ionic liquids equipped with an oxygen atom-containing alkyl side chain on the positively charged nitrogen atom were systematically synthesized and their physical properties investigated.

Selective deprotonation of tetra[3,4]thienylene in the presence of n-BuLi

The sequential lithiation mechanism for the selective deprotonation of tetra[3,4]thienylene (1) to form Li4-1 in the present of n-BuLi in THF is investigated.

A computational study of aromaticity and photophysical properties of unsymmetrical azatrioxa[8]circulenes

In the present work we have studied a series of unsymmetrical azatrioxa[8]circulenes in order to explain the impact of outer substituents and benzoannelation on photophysical constants and aromaticity of these compounds.

Electric-double-layer field-effect transistors with ionic liquids

Charge carrier control is a key issue in the development of electronic functions of semiconductive materials. Beyond the simple enhancement of conductivity, high charge carrier accumulation can realize various phenomena, such as chemical reaction, phase transition, magnetic ordering, and superconductivity. Electric double layers (EDLs), formed at solid-electrolyte interfaces, induce extremely large electric fields. This results in a high charge carrier accumulation in the solid, much more effectively than solid dielectric materials. In the present review, we describe recent developments in the field-effect transistors (FETs) with gate dielectrics of ionic liquids, which have attracted much attention due to their wide electrochemical windows, low vapor pressures, and high chemical and physical stability. We explain the capacitance effects of ionic liquids, and describe the various combinations of ionic liquids and organic and inorganic semiconductors that are used to achieve such effects as high transistor performance, insulator-metal transitions, superconductivity, and ferromagnetism, in addition to the applications of the ionic-liquid EDL-FETs in logic devices. We discuss the factors controlling the mobility and threshold voltage in these types of FETs, and show the ionic liquid dependence of the transistor performance.

Crystal structure, spin polarization, solid-state electrochemistry, and high n-type carrier mobility of a paramagnetic semiconductor: vanadyl tetrakis(thiadiazole)porphyrazine

We report the synthesis, crystal structure, and magnetic, electrochemical, and carrier-transport properties of vanadyl tetrakis(thiadiazole)porphyrazine (abbreviated as VOTTDPz) with S = ½. X-ray crystal analysis reveals two polymorphs, the α and β forms; the former consists of a 1D regular π stacking, while the latter forms a 2D π network. Molecular orbital calculations suggest a V(4+)(d(1)) ground state and a characteristic spin polarization on the whole molecular skeleton. The temperature dependence of the paramagnetic susceptibility of the α form clearly indicates a ferromagnetic interaction with a positive Weiss constant of θ = 2.4 K, which is well-explained by McConnell's type I mechanism. VOTTDPz forms amorphous thin films with a flat and smooth surface, and their cyclic voltammogram curves indicate a one-electron reduction process, which is highly electrochromic, because of a reduction of the porphyrazine π ring. Thin-film field-effect transistors of VOTTDPz with ionic-liquid gate dielectrics exhibit n-type performance, with a high mobility of μ = 2.8 × 10(-2) cm(2) V(-1) s(-1) and an on/off ratio of 10(4), even though the thin films are amorphous.

A complementary organic inverter of porphyrazine thin films: low-voltage operation using ionic liquid gate dielectrics

We studied a complementary organic inverter consisting of a p-type semiconductor, metal-free phthalocyanine (H(2)Pc), and an n-type semiconductor, tetrakis(thiadiazole)porphyrazine (H(2)TTDPz), operated through the ionic-liquid gate dielectrics of N,N-diethyl-N-methyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI). This organic inverter exhibits high performance with a very low operation voltage below 1.0 V and a dynamic response up to 20 Hz.