Layer number-dependent structural evolution of two-dimensional diamond films

The Role of Structural Defects in the Growth of Two-Dimensional Diamond from Graphene

The presented work is devoted to the study of the formation of the thinnest diamond film (diamane). We investigate the initial stages of diamond nucleation in imperfect bilayer graphene exposed by the deposition of H atoms (chemically induced phase transition). We show that defects serve as nucleation centers, their hydrogenation is energy favorable and depends on the defect type. Hydrogenation of vacancies facilitates the binding of graphene layers, but the impact wanes already at the second coordination sphere. Defects influence of 5|7 is lower but promotes diamondization. The grain boundary role is similar but can lead to the final formation of a diamond film consisting of chemically connected grains with different surfaces. Interestingly, even hexagonal and cubic two-dimensional diamonds can coexist together in the same film, which suggests the possibility of obtaining a new two-dimensional polycrystal unexplored before.

Progress in Diamanes and Diamanoids Nanosystems for Emerging Technologies

New materials are the backbone of their technology-driven modern civilization and at present carbon nanostructures are the leading candidates that have attracted huge research activities. Diamanes and diamanoids are the new nanoallotropes of sp3 hybridized carbon which can be fabricated by proper functionalization, substitution, and via Birch reduction under controlled pressure using graphitic system as a precursor. These nanoallotropes exhibit outstanding electrical, thermal, optical, vibrational, and mechanical properties, which can be an asset for new technologies, especially for quantum devices, photonics, and space technologies. Moreover, the features like wide bandgap, tunable thermal conductivity, excellent thermal insulation, etc. make diamanes and diamanoids ideal candidates for nano-electrical devices, nano-resonators, optical waveguides, and the next generation thermal management systems. In this review, diamanes and diamanoids are discussed in detail in terms of its historical prospect, method of synthesis, structural features, broad properties, and cutting-edge applications. Additionally, the prospects of diamanes and diamanoids for new applications are carefully discussed. This review aims to provide a critical update with important ideas for a new generation of quantum devices based on diamanes and diamanoids which are going to be an important topic in the future of carbon nanotechnology.

Two-Dimensional Diamond-Diamane: Current State and Further Prospects

Two-dimensional diamond, or diamane, is an ultrathin film with unique physical properties that combine the record values of the bulk crystal with the exciting features caused by the nanoscale nature. At the current stage of research, the diamane properties are mostly studied theoretically, and the main experimental efforts are directed at its synthesis. The latter is the trickiest problem since traditional methods involving the application of high pressure are not fully suitable due to the influence of surface effects. For diamane research, this poses a number of challenges, whose description is the main purpose and scope of this review. The paper also discusses the progress made so far and outlines the prospects for this field, at the crossroads of the timeless diamond and decade-old graphene.

Boron-dopant enhanced stability of diamane with tunable band gap

The structural, electronic, and superconducting properties of B-doped cubic and hexagonal diamane (single layer diamond) were investigated based on the first-principles methods. B atom tends to stay in the substitutional site, and the most stable configuration is the structure with vertical B-B dimer. The formation energy of B-doped diamane is lower than the counterpart of pristine diamane indicating that B dopant can facilitate the synthesis of diamane. The configurations with vertical B-B dimers are semiconductors with tunable band gaps, which decrease with the B concentration increasing due to the interaction between B-B dimers. For example, the band gap of 3.125 mol% and 6.25 mol% B-doped cubic diamane is 1.82 eV and 1.44 eV, respectively. Moreover, configurations with meta-stable B distributions are metals, which have comparable superconducting transition temperatures with B-doped diamond (~4 K).

Self-organized multi-layered graphene-boron-doped diamond hybrid nanowalls for high-performance electron emission devices

Carbon nanomaterials such as nanotubes, nanoflakes/nanowalls, and graphene have been used as electron sources due to their superior field electron emission (FEE) characteristics. However, these materials show poor stability and short lifetimes, which prevent their use in practical device applications. The aim of this study was to find an innovative nanomaterial possessing both high robustness and reliable FEE behavior. Herein, a hybrid structure of self-organized multi-layered graphene (MLG)-boron doped diamond (BDD) nanowall materials with superior FEE characteristics was successfully synthesized using a microwave plasma enhanced chemical vapor deposition process. Transmission electron microscopy reveals that the as-prepared carbon clusters have a uniform, dense, and sharp nanowall morphology with sp³ diamond cores encased by an sp² MLG shell. Detailed nanoscale investigations conducted using peak force-controlled tunneling atomic force microscopy show that each of the core-shell structured carbon cluster fields emits electrons equally well. The MLG-BDD nanowall materials show a low turn-on field of 2.4 V μm^-1, a high emission current density of 4.2 mA cm^-2 at an applied field of 4.0 V μm^-1, a large field enhancement factor of 4500, and prominently high lifetime stability (lasting for 700 min), which demonstrate the superiority of these materials over other hybrid nanostructured materials. The potential of these MLG-BDD hybrid nanowall materials in practical device applications was further illustrated by the plasma illumination behavior of a microplasma device with these materials as the cathode, where a low threshold voltage of 330 V (low threshold field of 330 V mm^-1) and long plasma stability of 358 min were demonstrated. The fabrication of these hybrid nanowalls is straight forward and thereby opens up a pathway for the advancement of next-generation cathode materials for high brightness electron emission and microplasma-based display devices.

Instability and Spontaneous Reconstruction of Few-Monolayer Thick GaN Graphitic Structures

Two-dimensional (2D) semiconductors are a very hot topic in solid state science and technology. In addition to van der Waals solids that can be easily formed into 2D layers, it was argued that single layers of nominally 3D tetrahedrally bonded semiconductors, such as GaN or ZnO, also become flat in the monolayer limit; the planar structure was also proposed for few-layers of such materials. In this work, using first-principles calculations, we demonstrate that contrary to the existing consensus the graphitic structure of few-layer GaN is unstable and spontaneously reconstructs into a structure that remains hexagonal in plane but with covalent interlayer bonds that form alternating octagonal and square (8|4 Haeckelite) rings with pronounced in-plane anisotropy. Of special interest is the transformation of the band gap from indirect in planar GaN toward direct in the Haeckelite phase, making Haeckelite few-layer GaN an appealing material for flexible nano-optoelectronics.

Lonsdaleite Films with Nanometer Thickness

We investigate the properties of potentially the stiffest quasi-2-D films with lonsdaleite structure. Using a combination of ab initio and empirical potential approaches, we analyze the elastic properties of lonsdaleite films in both elastic and inelastic regimes and compare them with graphene and diamond films. We review possible fabrication methods of lonsdaleite films using the pure nanoscale "bottom-up" paradigm: by connecting carbon layers in multilayered graphene. We propose the realization of this method in two ways: by applying direct pressure and by using the recently proposed chemically induced phase transition. For both cases, we construct the phase diagrams depending on temperature, pressure, and film thickness. Finally, we consider the electronic properties of lonsdaleite films and establish the nonlinear dependence of the band gap on the films' thicknesses and their lower effective masses in comparison with bulk crystal.

Stacking and electric field effects in atomically thin layers of GaN

Atomically thin layers of nitrides are a subject of interest due to their novel applications. In this paper, we focus on GaN multilayers, investigating their stability and the effects of stacking and electric fields on their electronic properties in the framework of density functional theory. Both bilayers and trilayers prefer a planar configuration rather than a buckled bulk-like configuration. The application of an external perpendicular electric field induces distinct stacking-dependent features in the electronic properties of nitride multilayers: the band gap of a monolayer does not change whereas that of a trilayer is significantly reduced. Such a stacking-dependent tunability of the band gap in the presence of an applied field suggests that multilayer GaN is a good candidate material for next generation devices at the nanoscale.