Bandgap opening in silicene: Effect of substrates

First designing of a silicene-based optical MOSFET with outstanding performance

Miniaturized integrated optical devices with low power consumption have long been considered hot candidates for plasmonic applications. While 2D materials such as graphene have been proposed for this purpose, they suffer from large propagation loss and low controllability at room temperature. Here, a silicene-based optical MOSFET with excellent performance is designed to achieve integrated circuit optical technology. The designed device is comprised of a silicene optical waveguide whose switching operation is performed by a gate and has a structure similar to an enhancement MOSFET with a formed channel. Unlike graphene, the surface conductivity of silicene can be controlled by both chemical potential and an electric field perpendicular to its surface. This unique feature of silicene is used to design and simulate an optical-MOSFET with transverse electric polarization at 300 K. The salient characteristics of the optical device include its nanoscale dimensions, ultra-low insertion loss of 0.13 dB, infinite extinction ratio, and quality factor of 688, proposing it as a promising tool for optical integration.

Density-functional-theory simulations of the water and ice adhesion on silicene quantum dots

The absorption of water and ice on silicon is important to understand for many applications and safety concerns for electronic devices as most of them are fabricated using silicon. Meanwhile, recently silicene nanostructures have attracted much attention due to their potential applications in electronic devices such as gas or humidity sensors. However, for the moment, the theoretical study of the interaction between water molecules and silicene nanostructures is still rare although there is already theoretical work on the effect of water molecules on the silicene periodic structure. The specific conditions such as the finite size effect, the edge saturation of the silicene nanostructure, and the distance between the water/ice and the silicene at the initial onset of the contact have not been carefully considered before. Here we have modelled the absorption of a water molecule and a square ice on the silicene nanodot by using hybrid-exchange density-functional theory, complemented by the Van der Waals forces correction. Three different sizes of silicene nanodots have been chosen for simulations, namely \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$3\times 3$$\end{document}3×3, \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$4\times 4$$\end{document}4×4, and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$5\times 5$$\end{document}5×5, with and without the hydrogen saturation on the edge. Our calculations suggest that the silicene nanodots chosen here are both hydrophilic and ice-philic. The water molecule and the square ice have tilted angles towards the silicene nanodot plane at ~ 70º and ~ 45º, respectively, which could be owing to the zig–zag structure on silicene. The absorption energies are size dependent for unsaturated silicene nanodots, whereas almost size independent for the hydrogen saturated cases. Our work on the single water molecule absorption energy on silicene nanodots is qualitatively in agreement with the previous theoretical and experimental work. However, the ice structure on silicene is yet to be validated by the relevant experiments. Our calculation results not only further complement the current paucity of water-to-silicene-nanostructure contact mechanisms, but also lead to the first study of square-ice contact mechanisms for silicene. Our findings presented here could be useful for the future design of semiconducting devices based on silicene nanostructures, especially in the humid and low-temperature environments.

Temperature-Dependent Growth and Evolution of Silicene on Au Ultrathin Films-LEEM and LEED Studies

The formation and evolution of silicene on ultrathin Au films have been investigated with low energy electron microscopy and diffraction. Careful control of the annealing rate and temperature of Au films epitaxially grown on the Si(111) surface allows for the preparation of a large scale, of the order of cm², silicene sheets. Depending on the final temperature, three stages of silicene evolution can be distinguished: (i) the growth of the low buckled phase, (ii) the formation of a layered heterostructure of the low buckled and planar phases of silicene and (iii) the gradual destruction of the silicene. Each stage is characterized by its unique surface morphology and characteristic diffraction patterns. The present study gives an overview of structures formed on the surface of ultrathin Au films and morphology changes between room temperature and the temperature at which the formation of Au droplets on the Si(111) surface occurs.

The stability, structural, electronic, and optical properties of hydrogenated silicene under hydrostatic pressures: a first-principle study

The structural, electronic, and optical properties of hydrogenated silicene have been studied under different hydrostatic pressures using first-principle calculations. The binding energy and band structure have been calculated for chair (C-) and boat (B-) structures, which are having good stability at 0 GPa, 3 GPa, 6 GPa, 9 GPa, 12 GPa, 15 GPa, and 18 GPa hydrostatic pressures. Stability has been verified using binding energy and phonon calculations. The C- and B-structures have become metallic and unstable at 21 GPa. The optical properties of B-configuration have been studied in the energy range of 0-20 eV. Five optical parameters such as conductivity threshold (σ_th), dielectric constant ε(0), refractive index n(0), birefringence Δn(0), and plasmon energy (ħω_p) have been calculated for the first time under different hydrostatic pressures. The calculated values are in good agreement with the reported values at 0 GPa.

Rise of silicene and its applications in gas sensing

Reviewing a subject is done to provide an insight into theoretical and conceptual background of the study. Looking back into the history of an emerging field and summarizing it in a few pages is a herculean task. Anyway, it was imperative to write a few words about the rise of silicene, its properties, and its applications as gas sensors. Currently, silicene is a growing field of interest. It is probably one of the most studied materials nowadays and scientists and researchers are studying it because of its intriguing electronic properties and potential applications in nanoelectronics. Various experimental and theoretical investigations are going on worldwide to explore the various aspects of this field. It is essential to review the literature based on investigations by various scientists in this field.

Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures

Single layers of hexagonal boron nitride (h-BN) and silicene are brought together to form h-BN/silicene van der Waals (vdW) heterostructures. The effects of external electric fields and compressive strain on their structural and electronic properties are systematically studied through first principles calculations. Two silicene phases are considered: the low-buckled Si(LB) and the dumbbell-like Si(DB). They show exciting new properties as compared to the isolated layers, such as a tunable band gap that depends on the interlayer distance and is dictated by the charge transfer and orbital hybridization between h-BN and silicene, especially in the case of Si(LB). The electric field also increases the band gap in h-BN/Si(DB) and causes an asymmetric charge rearrangement in h-BN/Si(LB). Remarkably, we found a great potential of h-BN layers to function as substrates for silicene, enhancing both the strain and electric field effects on its electronic properties. These results contribute to a more detailed understanding of h-BN/Si 2D-based materials, highlighting promising possibilities in low-dimensional electronics.

Silicene/ZnI2van der Waals heterostructure: tunable structural and electronic properties

By utilizingab initiodensity functional theory, the structural and electronic properties of novel silicene/ZnI₂heterobilayers (HBLs) were investigated. Constructing HBLs with ZnI₂in different stacking configurations leads to direct bandgap opening of silicene at K point, which ranges from 138.2 to 201.2 meV. By analyzing the projected density of states and charge density distribution, we found that the predicted HBLs conserve the electronic properties of silicene and ZnI₂can serve as a decent substrate. The tunability of electronic properties can be achieved by enforcing biaxial strain and by varying interlayer distance where bandgap can get as low as zero to as high as 318.8 meV and 290.7 meV, respectively depending on the stacking patterns. Maintenance of the remarkable features of silicene, high mobility of charge carriers, and fine-tuning of bandgap pave the way to construct new nanoelectronic devices using these novel silicene/ZnI₂HBLs.

Recent advances of monoelemental 2D materials for photocatalytic applications

As a sustainable environmental governance strategy and energy conversion method, photocatalysis has considered to have great potential in this field due to its excellent optical properties and has become one of the most attractive technologies today. Among 2D materials, the emerging two-dimensional (2D) monoelemental materials mainly distributed in the -IIIA, -IVA, -VA and -VIA groups and show excellent performance in solar energy conversion due to their graphene-like 2D atomic structure and unique properties, thereby drawing increasing attention. This review briefly summarizes the preparation processes and fundamental properties of 2D single-element nanomaterials, as well as various modification strategies and adjustment mechanisms to enhance their photocatalytic properties. In particular, this article comprehensively discusses the related practical applications of 2D single-element materials in the field of photocatalysis, including photocatalytic degradation for contaminants removal, photocatalytic pathogen inactivation, photocatalytic fouling control and photocatalytic energy conversion. This review will provide some new opportunities for the rational design of other excellent photocatalysts based on 2D monoelemental materials, as well as present tremendous novel ideas for 2D monoelemental materials in other environmental conservation and energy-related applications, such as supercapacitors, electrocatalysis, solar cells, and so on.

Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications

The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.

Modulation of the electronic band structure of silicene by polar two-dimensional substrates

Using the density functional theory (DFT) calculations, we find that  Janus group-III chalcogenide monolayers can serve as a suitable substrate for silicene, and the Dirac electron band properties of silicene are also fully preserved. The maximum opened band gap can reach 179 meV at the Dirac point due to the interaction of silicene and the polar two-dimensional (2D) substrate. In addition, the electronic band structure of the heterostructure can be modulated by applying an electric field where its predicted band gap increases or decreases according to the direction of the applied external electric field. Furthermore, an insight into the electron structures can be understood by analyzing the electron energy-loss (EEL) spectra. From these results, we also predict that heterostructures with polar 2D substrates have broad application prospects in multi-functional devices. Besides, Janus group-III chalcogenide monolayers can be used as good substrates for growing silicene and the modulation of the electronic structure can also be applied to nanodevices and optoelectronic devices.

One-step controllable synthesis of amino-modification siloxene for enhanced solar water-splitting

Novel two-dimensional silicon-based material siloxene has been synthesized handily by a one-step method, which utilizes the characteristics of the topological exfoliation to simplify the process of synthesis and modification. It is worth mentioning that for the first time amino-modified derivative has been investigated. Amino modification can promote the oxidation of siloxene, enlarge the bandgap and extend the carrier lifetime of siloxene. The application of siloxene before and after modification in water-splitting has been investigated. In addition, the superiority of the resultant two-dimensional materials was concisely elaborated, which revealed that owing to more effective photogenerated carriers' separation in amino modification siloxene, hydrogen production could be greatly promoted.

Recent Advances in Tin: From Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac Semimetal

An atomic layer of tin in a buckled honeycomb lattice, termed stanene, is a promising large-gap two-dimensional topological insulator for realizing room-temperature quantum-spin-Hall effect and therefore has drawn tremendous interest in recent years. Because the electronic structures of Sn allotropes are sensitive to lattice strain, e.g. the semimetallic α-phase of Sn can transform into a three-dimensional topological Dirac semimetal under compressive strain, recent experimental advances have demonstrated that stanene layers on different substrates can also host various electronic properties relating to in-plane strain, interfacial charge transfer, layer thickness, and so on. Thus, comprehensive understanding of the growth mechanism at the atomic scale is highly desirable for precise control of such tunable properties. Herein, the fundamental properties of stanene and α-Sn films, recent achievements in epitaxial growth, challenges in high-quality synthesis, and possible applications of stanene are discussed.

Tunable spin-polarized band gap in Si2/NiI2 vdW heterostructure

Using density functional theory (DFT) calculations we investigate the structural and electronic properties of a heterogeneous van der Waals (vdW) structure consisting of silicene and NiI₂ single layers. We observe an interaction between the two layers with a net charge transfer from the ferromagnetic semiconductor NiI₂ to silicene, breaking the inversion symmetry of the silicene structure. However, the charges flow in opposite directions for the two spin channels, which leads to a vdW heterostructure with a spin-polarized band gap between the π and π* states. The band gap can be tuned by controlling the vertical distance between the layers. The features shown by this vdW heterostructure are new, and we believe that silicene on a NiI₂ layer can be used to construct heterostructures which have appropriate properties to be used in nanodevices where control of the spin-dependent carrier mobility is necessary and can be incorporated into silicon based electronics.

Using density functional theory (DFT) calculations we investigate the structural and electronic properties of a heterogeneous van der Waals (vdW) structure consisting of silicene and NiI₂ single layers.

Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study

Formulating methyl and trihalogenomethyl decorated plumbene monolayers as quantum spin Hall insulators for application in spintronic and dissipationless transport.

Transport and Photoelectric Properties of 2D Silicene/MX2 (M = Mo, W; X = S, Se) Heterostructures

The transport and photoelectric properties of four two-dimensional (2D) silicene/MX₂ (M = Mo, W; X = S, Se) heterostructures have been investigated by employing density functional theory, nonequilibrium Green's function, and Keldysh nonequilibrium Green's function methods. The stabilities of silicene (SiE) are obviously improved after being placed on the MX₂ (M = Mo, W; X = S, Se) substrates. In particular, the conductivities of SiE/MX₂ are enhanced compared with free-standing SiE and MX₂. Moreover, the conductivities are increased with the group number of X, i.e., in the order of SiE < SiE/MS₂ < SiE/MSe₂. An evident current oscillation phenomenon is observed in the SiE/WX₂ heterostructures. When a linear light illumination is applied, SiE/MSe₂ shows a stronger photoresponse than SiE/MS₂. The maximum photoresponse with a value of 9.0a ₀ ²/photon was obtained for SiE/WSe₂. More importantly, SiE/MS₂ (M = Mo, W) heterostructures are good candidates for application in designing solar cells owing to the well spatial separation of the charge carriers. This work provides some clues for further exploring 2D SiE/MX₂ heterostructures involving tailored photoelectric properties.

Functionalization of group-14 two-dimensional materials

The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp² and sp³ orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

Two-dimensional silicon crystals with sizable band gaps and ultrahigh carrier mobility

Due to their compatibility in the well-developed Si-based semiconductor industry, exploring two-dimensional (2D) silicon crystals with both sizable band gaps and high carrier mobility is important to develop high-performance electronic and optoelectronic devices on the nanoscale. Here, eleven new 2D silicon crystals are reported based on the strategy of mixing 3-fold and 4-fold coordinated silicon atoms in 2D confined phases and first-principles calculations. We establish that these 2D silicon crystals can be obtained by functionalizing silicene with silicon atoms, dimers, or chains, which exhibit lower formation energy than that of silicene. Their dynamic stability and thermal stability are confirmed by phonon calculations and Born-Oppenheimer molecular dynamic simulation at temperatures up to 700 K. Electronic structure calculations reveal that these 2D silicon crystals are semiconductors with sizable and tunable band gaps, ranging from 1.12 to 1.67 eV, and four of them are direct or quasi-direct band gap semiconductors with strong absorption in the visible-light frequency. The calculated Young's stiffness of 2D silicon crystals ranges from 31 to 88 N m^-1, which are comparable to phosphorene, but remarkably smaller than those of MoS₂ monolayer and graphene. Remarkably, C_z-P2/c-Si₁₂ possesses a negative Poisson's ratio with a maximum value of -0.055. In particular, 2D silicon crystals possess ultrahigh carrier mobility of up to 1.7 × 10⁵ and 1.3 × 10⁴ cm² V^-1 s^-1 at room temperature for electrons and holes, respectively, suitable for high-speed electronic and optoelectronic applications on the nanoscale.

Silicene and germanene on InSe substrates: structures and tunable electronic properties

The tunable electronic properties of Si/InSe and Ge/InSe HLs by applying an external electric field or strain.

Modulation of silicene properties by AsSb with van der Waals interaction

Our present work provides a new promising material AsSb monlayer as the substrate for silicene with a negligible mismatch, sizable band gap and high carrier mobility.

Formation of Silicene Nanosheets on Graphite

The extraordinary properties of graphene have spurred huge interest in the experimental realization of a two-dimensional honeycomb lattice of silicon, namely, silicene. However, its synthesis on supporting substrates remains a challenging issue. Recently, strong doubts against the possibility of synthesizing silicene on metallic substrates have been brought forward because of the non-negligible interaction between silicon and metal atoms. To solve the growth problems, we directly deposited silicon on a chemically inert graphite substrate at room temperature. Based on atomic force microscopy, scanning tunneling microscopy, and ab initio molecular dynamics simulations, we reveal the growth of silicon nanosheets where the substrate-silicon interaction is minimized. Scanning tunneling microscopy measurements clearly display the atomically resolved unit cell and the small buckling of the silicene honeycomb structure. Similar to the carbon atoms in graphene, each of the silicon atoms has three nearest and six second nearest neighbors, thus demonstrating its dominant sp² configuration. Our scanning tunneling spectroscopy investigations confirm the metallic character of the deposited silicene, in excellent agreement with our band structure calculations that also exhibit the presence of a Dirac cone.

A theoretical review on electronic, magnetic and optical properties of silicene

Inspired by the success of graphene, various two dimensional (2D) structures in free standing (FS) (hypothetical) form and on different substrates have been proposed recently. Silicene, a silicon counterpart of graphene, is predicted to possess massless Dirac fermions and to exhibit an experimentally accessible quantum spin Hall effect. Since the effective spin-orbit interaction is quite significant compared to graphene, buckling in silicene opens a gap of 1.55 meV at the Dirac point. This band gap can be further tailored by applying in plane stress, an external electric field, chemical functionalization and defects. In this topical theoretical review, we would like to explore the electronic, magnetic and optical properties, including Raman spectroscopy of various important derivatives of monolayer and bilayer silicene (BLS) with different adatoms (doping). The magnetic properties can be tailored by chemical functionalization, such as hydrogenation and introducing vacancy into the pristine planar silicene. Apart from some universal features of optical absorption present in all these 2D materials, the study on reflectivity modulation with doping (Al and P) concentration in silicene has indicated the emergence of some strong peaks having the robust characteristic of a doped reflective surface for both polarizations of the electromagnetic (EM) field. Besides this, attempts will be made to understand the electronic properties of silicene from some simple tight-binding Hamiltonian. We also point out the importance of shape dependence and optical anisotropy properties in silicene nanodisks and establish that a zigzag trigonal possesses the maximum magnetic moment. We also suggest future directions to be explored to make the synthesis of silicene and its various derivatives viable for verification of theoretical predictions. Although this is a fairly new route, the results obtained so far from experimental and theoretical studies in understanding silicene have shown enough significant promising features to open a new direction in the silicon industry, silicon based nano-structures in spintronics and in opto-electronic devices.

Defections induced hydrogenation of silicene: a density functional theory calculation study

Vacancy defects significantly depress the energy barrier for dissociative adsorption of H₂ on silicene, which can open the band gap of silicene.

A theoretical study of gas adsorption on silicene nanoribbons and its application in a highly sensitive molecule sensor

Silicene nanoribbon is a promising material to detect individual gas molecules with high sensitivity.

Silicene and graphene nano materials in gas sensing mechanism

Silicene, the Si analogue of graphene, has recently extended the short list of existing two-dimensional (2D) atomic crystals.

First Principles Study on the Electronic Structure and Interface Stability of Hybrid Silicene/Fluorosilicene Nanoribbons

The interface stability of hybrid silicene/fluorosilicene nanoribbons (SFNRs) has been investigated by using density functional theory calculations, where fluorosilicene is the fully fluorinated silicene. It is found that the diffusion of F atoms at the zigzag and armchair interfaces of SFNRs is endothermic, and the corresponding minimum energy barriers are respectively 1.66 and 1.56 eV, which are remarkably higher than the minimum diffusion energy barrier of one F atom and two F atoms on pristine silicene 1.00 and 1.29 eV, respectively. Therefore, the thermal stability of SFNRs can be significantly enhanced by increasing the F diffusion barriers through silicene/fluorosilicene interface engineering. In addition, the electronic and magnetic properties of SFNRs are also investigated. It is found that the armchair SFNRs are nonmagnetic semiconductors, and the band gap of armchair SFNRs presents oscillatory behavior when the width of silicene part changing. For the zigzag SFNRs, the antiferromagnetic semiconducting state is the most stable one. This work provides fundamental insights for the applications of SFNRs in electronic devices.

Two-dimensional silicon monolayers generated on c-BN(111) substrate

Silicene, a buckled two-dimensional honeycomb structure of silicon, has been experimentally synthesized on very few substrates. Furthermore, synthesizing silicene with a Dirac point is another hot research area. However, only silicene grown on Ag(111) has been reported to have a Dirac point, which has lowered the expectations of researchers. Here, three Si monolayer structures, a Si chain-type structure, a two-dimensional hexagonal close packed compound structure, and a two-dimensional hexagonal close packed structure, are generated on a c-BN(111) substrate using a particle-swarm optimization algorithm implemented in CALYPSO code. Band structure calculations show that all three structures exhibit a metallic nature. In particular, due to the absolutely flat conformation of the latter two structures, a linear dispersion exists near the Fermi energy level, indicating that charge carriers can transport like massless Dirac fermions. Our results open an alternative way of searching for other two-dimensional silicon monolayers with Dirac points.

Defects in silicene: vacancy clusters, extended line defects, and Di-adatoms

Defects are almost inevitable during the fabrication process, and their existence strongly affects thermodynamic and (opto)electronic properties of two-dimensional materials. Very recent experiments have provided clear evidence for the presence of larger multi-vacancies in silicene, but their structure, stability, and formation mechanism remain largely unexplored. Here, we present a detailed theoretical study of silicene monolayer containing three types of defects: vacancy clusters, extended line defects (ELDs), and di-adatoms. First-principles calculations, along with ab initio molecular dynamics simulations, revealed the coalescence tendency of small defects and formation of highly stable vacancy clusters. The 5|8|5 ELD – the most favorable extended defect in both graphene and silicene sheets – is found to be easier to form in the latter case due to the mixed sp²/sp³ hybridization of silicon. In addition, hybrid functional calculations that contain part of the Hatree-Fock exchange energy demonstrated that the introduction of single and double silicon adatoms significantly enhances the stability of the system, and provides an effective approach on tuning the magnetic moment and band gap of silicene.

Removal of NO with silicene: a DFT investigation

NO can be adsorbed onto silicene and then reduced into N₂via a dimer mechanism.

Dirac fermions in silicene on Pb(111) surface

Silicene on Pb(111) surface should host massive Dirac fermions, as the DFT calculations suggest.

Band gap opening in silicene on MgBr2(0001) induced by Li and Na

Silicene consists of a monolayer of Si atoms in a buckled honeycomb structure and is expected to be well compatible with the current Si-based technology. However, the band gap is strongly influenced by the substrate. In this context, the structural and electronic properties of silicene on MgBr2(0001) modified by Li and Na are investigated by first-principles calculations. Charge transfer from silicene (substrate) to substrate (silicene) is found for substitutional doping (intercalation). As compared to a band gap of 0.01 eV on the pristine substrate, strongly enhanced band gaps of 0.65 eV (substitutional doping) and 0.24 eV (intercalation) are achieved. The band gap increases with the dopant concentration.

Structural and electronic properties of silicene on MgX₂ (X = Cl, Br, and I)

Silicene is a monolayer of Si atoms in a two-dimensional honeycomb lattice, being expected to be compatible with current Si-based nanoelectronics. The behavior of silicene is strongly influenced by the substrate. In this context, its structural and electronic properties on MgX2 (X = Cl, Br, and I) have been investigated using first-principles calculations. Different locations of the Si atoms are found to be energetically degenerate because of the weak van der Waals interaction with the substrates. The Si buckling height is below 0.55 Å, which is close to the value of free-standing silicene (0.49 Å). Importantly, the Dirac cone of silicene is well preserved on MgX2 (located slightly above the Fermi level), and the band gaps induced by the substrate are less than 0.1 eV. Application of an external electric field and stacking can be used to increase the band gap.

Tunable band gaps in silicene–MoS2heterobilayers

A sizable and tunable bandgap is realized in silicene–MoS₂heterobilayers.