Quantum efficiency enhancement in CsI/metal photocathodes

High-power vacuum terahertz photomixer and integrated circuits based on microscale phototubes

Technologies and industrials in long-distance communication, detection, and imaging applications are still in great need of higher-output-power terahertz sources. This paper proposes two kinds of microscale vacuum phototube based high-power terahertz source: vacuum photomixer and terahertz integrated circuit. The principle of photomixer based on photoemission and field-assisted photoemission is demonstrated. Its capability of producing radiation power beyond 1 mW is estimated based on theoretical analysis and experimental evidence. Simulation and theoretical analysis have shown that the fundamental THz photodiode devices can operate with a space-charge limited current density of 4496 A/cm² at 60 V, and the amplifier circuits are calculated to have a gain performance of around 10 dB. The two photoemission-based roadmaps have the potential to be developed from an emerging and interdisciplinary field to more promising future directions of THz science and technology.

A mechanism of Cu work function reduction in CsBr/Cu photocathodes

Thin films of CsBr deposited on Cu(100) have been proposed as next-generation photocathode materials for applications in particle accelerators and free-electron lasers. However, the mechanisms underlying an improved photocathode performance as well as their long-term stability remain poorly understood. We present Density Functional Theory (DFT) calculations of the work function reduction following the application of CsBr thin film coatings to Cu photocathodes. The effects of both flat and rough interface and van der Waals forces are examined. Calculations suggest that CsBr films can reduce the Cu(100) work function by about 1.5 eV, which would explain the observed increase in quantum efficiency (QE) of coated vs. uncoated photocathodes. A model explaining the experimentally observed laser activation of photocathodes is provided whereby the photo-induced creation of Br vacancies and Cs-Br di-vacancies and their subsequent diffusion to the Cu/CsBr interface lead to a further increase in QE after a period of laser irradiation.