Thermal boundary resistance between the polycrystalline graphene and the amorphous SiO2 substrate

Thermal Transport of AlN/Graphene/3C-SiC Typical Heterostructures with Different Crystallinities of Graphene

It is proven that introduction of graphene into typical heterostructures can effectively reduce the high interfacial thermal resistance in semiconductor chips. The crystallinity of graphene varies greatly; thus, we have investigated the effects of single-crystal and polycrystalline graphene on the thermal transport of AlN/graphene/3C-SiC heterostructures by molecular dynamics. The results show that polycrystalline graphene contributes more to the interfacial thermal conductance (ITC) inside the chip with a maximum increase of 75.09%, which is further confirmed by the energy transport and thermal relaxation time. Multiple analyses indicate that grain boundaries lead to the increase in C-Si covalent bonds, and thus, strong interactions improve the ITC. However, covalent bonding further causes local tensile strain and wrinkles in graphene. The former decreases the ITC, and the latter leads to the fluctuation of the van der Waals interaction at the interface. The combined effect of various influential factors results in the increase in the ITC, which are confirmed by phonon transmission with 0-18 THz. In addition, wrinkles and covalent bonding lead to increased stress concentration in polycrystalline graphene. This leads to a maximum reduction of 19.23% in the in-plane thermal conductivity, which is not conducive to the lateral diffusion of hot spots within the chip. The research results would provide important guidance in designing for high thermal transport performance high-power chips.

Interfacial thermal transport of graphene/β-Ga2O3 heterojunctions: a molecular dynamics study with a self-consistent interatomic potential

Graphene/β-Ga₂O₃ heterojunctions are widely used in high-power and high-frequency devices, for which thermal management is vital to the device operation and life. Here we apply molecular dynamics simulation to calculate the interfacial thermal resistance (ITR) between graphene and β-Ga₂O₃. Based on the rigid ion model, a self-consistent interatomic potential with a set of parameters that can well reproduce the basic physical properties of crystal β-Ga₂O₃ is fitted. Using this potential, the effects of model size, interface type, temperature, vacancy defects and graphene hydrogenation on the ITR of graphene/β-Ga₂O₃ heterojunctions are evaluated. The results show that there is no obvious dependence of ITR on the size of graphene and β-Ga₂O₃. It is reported that the ITR values of the (100), (010) and (001) interfaces are 7.28 ± 0.35 × 10^-8 K m² W^-1, 6.69 ± 0.44 × 10^-8 K m² W^-1 and 5.22 ± 0.35 × 10^-8 K m² W^-1 at 300 K, respectively. Both temperature increase and vacancy defect increase can prompt the energy propagation across graphene/β-Ga₂O₃ interfaces due to the enhancement of phonon coupling. In addition, graphene hydrogenation provides new channels for in-plane and out-of-plane phonon coupling, and thus reduces the ITR between graphene and β-Ga₂O₃. This study provides basic strategies for the thermal design and management of graphene/β-Ga₂O₃ based photoelectric devices.