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Deokar G, Genovese A, Surya SG, Long C, Salama KN, Costa PMFJ. Semi-transparent graphite films growth on Ni and their double-sided polymer-free transfer. Sci Rep 2020; 10:14703. [PMID: 32895394 PMCID: PMC7477098 DOI: 10.1038/s41598-020-71435-7] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/11/2020] [Indexed: 11/21/2022] Open
Abstract
Nanorange thickness graphite films (NGFs) are robust nanomaterials that can be produced via catalytic chemical vapour deposition but questions remain regarding their facile transfer and how surface topography may affect their application in next-generation devices. Here, we report the growth of NGFs (with an area of 55 cm2 and thickness of ~ 100 nm) on both sides of a polycrystalline Ni foil and their polymer-free transfer (front- and back-side, in areas up to 6 cm2). Due to the catalyst foil topography, the two carbon films differed in physical properties and other characteristics such as surface roughness. We demonstrate that the coarser back-side NGF is well-suited for NO2 sensing, whereas the smoother and more electrically conductive front-side NGF (2000 S/cm, sheet resistance − 50 Ω/sq) could be a viable conducting channel or counter electrode in solar cells (as it transmits 62% of visible light). Overall, the growth and transfer processes described could help realizing NGFs as an alternative carbon material for those technological applications where graphene and micrometer-thick graphite films are not an option.
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Affiliation(s)
- Geetanjali Deokar
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
| | - Alessandro Genovese
- Core Labs, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Sandeep G Surya
- Sensors lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Long
- Core Labs, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Khaled N Salama
- Sensors lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Pedro M F J Costa
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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Zhou T, Xu C, Liu H, Wei Q, Wang H, Zhang J, Zhao T, Liu Z, Zhang X, Zeng Y, Cheng HM, Ren W. Second Time-Scale Synthesis of High-Quality Graphite Films by Quenching for Effective Electromagnetic Interference Shielding. ACS NANO 2020; 14:3121-3128. [PMID: 32073250 DOI: 10.1021/acsnano.9b08169] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Graphite film has many remarkable properties and intriguing applications from energy storage, electromagnetic interference (EMI) shielding, and thermal management to ultraviolet lithography. However, the existing synthesis methods require an extremely high processing temperature of ∼3000 °C and/or long processing time of typically hours. Here, we report an ultrafast synthesis of tens of nanometer-thick high-quality graphite films within a few seconds by quenching a hot Ni foil in ethanol. The vertical growth rate can reach over 64 nm s-1, which is more than 2 orders of magnitude higher than those of the existing methods. Moreover, the films show excellent electrical conductivity (∼2.6 × 105 S/m) and mechanical strength (∼110 MPa) comparable to or even better than those synthesized by chemical vapor deposition. As an example, we demonstrate the potential of these graphite films for effective EMI shielding, which show a record absolute shielding effectiveness of 481,000 dB cm2 g-1, outperforming all the reported synthetic materials.
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Affiliation(s)
- Tianya Zhou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
| | - Haopeng Liu
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, P.R. China
| | - Qinwei Wei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China
| | - Han Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China
| | - Jiangang Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China
| | - Tong Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
| | - Xuefeng Zhang
- Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, P.R. China
| | - You Zeng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, 1001 Xueyuan Road, Shenzhen 518055, P.R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P.R. China
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