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Cheng Y, Wang J, He Z, Chen M, Guo X, Deng B, Ye Q, Li S, Chen H, Sou IK, Wu S. Broadband Photodetection of Centimeter-Scale T-Phase Gallium Telluride Grown by Molecular Beam Epitaxy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:17881-17890. [PMID: 38537646 DOI: 10.1021/acsami.4c00461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Two-dimensional (2D) semiconductors have recently attracted considerable attention due to their promising applications in future integrated electronic and optoelectronic devices. Large-scale synthesis of high-quality 2D semiconductors is an increasingly essential requirement for practical applications, such as sensing, imaging, and communications. In this work, homogeneous 2D GaTe films on a centimeter scale are epitaxially grown on fluorphlogopite mica substrates by molecular beam epitaxy (MBE). The epitaxial GaTe thin films showed an atomically 2D layered lattice structure with a T phase, which has not been discovered in the GaTe geometric isomer. Furthermore, semiconducting behavior and high mobility above room temperature were found in T-GaTe epitaxial films, which are essential for application in semiconducting devices. The T-GaTe-based photodetectors demonstrated respectable photodetection performance with a responsivity of 13 mA/W and a fast response speed. By introducing monolayer graphene as the substrate, we successfully realized high-quality GaTe/graphene heterostructures. The performance has been significantly improved, such as the responsivity was enhanced more than 20 times. These results highlight a feasible scheme for exploring the crystal phase of 2D GaTe and realizing the controlled growth of GaTe films on large substrates, which could promote the development of broadband, high-performance, and large-scale photodetection applications.
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Affiliation(s)
- Yijun Cheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
| | - Jiali Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhihao He
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Mingyi Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
| | - Xinhao Guo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
| | - Bo Deng
- Hangzhou Key Laboratory of Quantum Matter, Department of Physics, Hangzhou Normal University, Hangzhou 311121, China
| | - Quanlin Ye
- Hangzhou Key Laboratory of Quantum Matter, Department of Physics, Hangzhou Normal University, Hangzhou 311121, China
| | - Shuwei Li
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Iam Keong Sou
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Shuxiang Wu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
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He W, Kong L, Yu P, Yang G. Record-High Work-Function p-Type CuBiP 2 Se 6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209995. [PMID: 36640444 DOI: 10.1002/adma.202209995] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP2 Se6 atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm2 V-1 s-1 , and an ultrahigh on/off current exceeding 106 at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP2 Se6 . Additionally, a multilayer graphene/CuBiP2 Se6 /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 104 A W-1 , an external quantum efficiency (EQE) of 1.5 × 107 %, a detectivity (D) of 1.14 × 1013 Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP2 Se6 an ideal p-type candidate material for next-generation CMOSs logic devices.
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Affiliation(s)
- Wei He
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Lingling Kong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
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Hoang Huy VP, Kim IT, Hur J. Gallium-Telluride-Based Composite as Promising Lithium Storage Material. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3362. [PMID: 36234490 PMCID: PMC9565750 DOI: 10.3390/nano12193362] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2022] [Revised: 09/18/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
Various applications of gallium telluride have been investigated, such as in optoelectronic devices, radiation detectors, solar cells, and semiconductors, owing to its unique electronic, mechanical, and structural properties. Among the various forms of gallium telluride (e.g., GaTe, Ga3Te4, Ga2Te3, and Ga2Te5), we propose a gallium (III) telluride (Ga2Te3)-based composite (Ga2Te3-TiO2-C) as a prospective anode for Li-ion batteries (LIBs). The lithiation/delithiation phase change mechanism of Ga2Te3 was examined. The existence of the TiO2-C hybrid buffering matrix improved the electrical conductivity as well as mechanical integrity of the composite anode for LIBs. Furthermore, the impact of the C concentration on the performance of Ga2Te3-TiO2-C was comprehensively studied through cyclic voltammetry, differential capacity analysis, and electrochemical impedance spectroscopy. The Ga2Te3-TiO2-C electrode showed high rate capability (capacity retention of 96% at 10 A g-1 relative to 0.1 A g-1) as well as high reversible specific capacity (769 mAh g-1 after 300 cycles at 100 mA g-1). The capacity of Ga2Te3-TiO2-C was enhanced by the synergistic interaction of TiO2 and amorphous C. It thereby outperformed the majority of the most recent Ga-based LIB electrodes. Thus, Ga2Te3-TiO2-C can be thought of as a prospective anode for LIBs in the future.
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Surface doping of nonmetal atoms enhances photocatalytic performance of monolayer GeSe for degradation of organic pollution. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.139156] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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Gu TY, Wang Y, Liu GL, Zhang GY. Strain-induced changes of electronic and optical properties of O adsorbed ReS2 monolayer. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.139057] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Zhang CG, Ji WX, Li P, Zhang CW, Wang PJ. Tuning the electronic and optical properties of two-dimensional AgBiP2Se6 and AgInP2Se6 Janus monolayers. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.138933] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
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Yan H, Liang X, Dong S, Lei Y, Zhang G, Chen R, Hu J, Jing M, Wang S, Su X, Qin C, Xiao L, Jia S. Exploration of exciton dynamics in GaTe nanoflakes via temperature- and power-dependent time-resolved photoluminescence spectra. OPTICS EXPRESS 2021; 29:8880-8889. [PMID: 33820329 DOI: 10.1364/oe.418749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2021] [Accepted: 02/27/2021] [Indexed: 06/12/2023]
Abstract
GaTe nanoflakes have been receiving much research attention recently due to their applications in optoelectronic devices, such as anisotropic non-volatile memory, solar cells, and high-sensitivity photodetectors from the ultraviolet to the visible region. Further applications, however, have been impeded due to the limited understanding of their exciton dynamics. In this work we perform temperature- and power-dependent time-resolved photoluminescence (PL) spectra to comprehensively investigate the exciton dynamics of GaTe nanoflakes. Temperature-dependent PL measurements manifest that spectral profiles of GaTe nanoflakes change dramatically from cryogenic to room temperature, where the bound exciton and donor-to-acceptor pair transition normally disappear above 100 K, while the charged exciton survives to room temperature. The lifetimes of these excitons and their evolution vs temperature have been uncovered by time-resolved PL spectra. Further measurements reveal the entirely different power-dependent exciton behaviors of GaTe nanoflakes between room and cryogenic temperatures. The underlying mechanisms have been proposed to explore the sophisticated exciton dynamics within GaTe nanoflakes. Our results offer a more thorough understanding of the exciton dynamics of GaTe nanoflakes, enabling further progress in engineering GaTe-based applications, such as photodetectors, light-emitting diodes, and nanoelectronics.
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Bandura AV, Kovalenko AV, Kuruch DD, Evarestov RA. Lattice Dynamics and Thermodynamic Properties of Bulk Phases and Monolayers of GaTe and InTe: A Comparison from First‐Principles Calculations. Eur J Inorg Chem 2020. [DOI: 10.1002/ejic.202000634] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Andrei V. Bandura
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
| | - Alexey V. Kovalenko
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
| | - Dmitry D. Kuruch
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
| | - Robert A. Evarestov
- Quantum Chemistry Department, Institute of Chemistry Saint Petersburg State University 7/9 Universitetskaya Naberezhnaya St. Petersburg 199034 Russian Federation
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Ji X, Lu JF, Wang Q, Zhang D. Impurity doping approach on bandgap narrowing and improved photocatalysis of Ca2Bi2O5. POWDER TECHNOL 2020. [DOI: 10.1016/j.powtec.2020.08.029] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Wu P, Zhang X, Chen D, Tang J. Adsorption of SF 6 Decomposed Products on ZnO-Modified C 3N: A Theoretical Study. NANOSCALE RESEARCH LETTERS 2020; 15:186. [PMID: 32975664 PMCID: PMC7519028 DOI: 10.1186/s11671-020-03412-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Accepted: 09/14/2020] [Indexed: 06/11/2023]
Abstract
SF6, as an outstanding insulation medium, is widely used in the high-voltage insulation devices, guaranteeing the safe operation of the power system. Nevertheless, the inevitable partial discharge in a long-running device causes the decomposition of SF6 and deteriorates its insulation performance. In this work, DFT calculations were performed to study the adsorbing and sensing properties of ZnO-modified C3N (ZnO-C3N) nanosheet towards SF6 decomposed products, in order to propose a novel nano-candidate for evaluating the operation status of SF6 insulation devises. We first investigated the structure of ZnO-C3N monolayer and then simulated its adsorption behaviour upon four typical SF6 decomposed species, namely H2S, SO2, SOF2, and SO2F2. It is found that the ZnO-C3N monolayer can exhibit desirable reactivity and sensitivity on SO2, SOF2, and SO2F2, leading to the intense deformation of gas molecules and large adsorption energies. These consequences allow the potential application of gas adsorbent based on ZnO-C3N monolayer for removing impurity gases from SF6 insulation equipment. According to the analysis, it is supposed that ZnO-C3N monolayer is qualified to be used in maintaining insulation strength and ensuring the safe operation of power system.
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Affiliation(s)
- Peng Wu
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
| | - Xiaoxing Zhang
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China.
- Hubei Key Laboratory for High-efficiency Utilization of Solar Energy and Operation Control of Energy Storage System, Hubei University of Technology, Wuhan, 430068, China.
- State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing, 400044, China.
| | - Dachang Chen
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
| | - Ju Tang
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
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Stacking impact on the optical and electronic properties of two-dimensional MoSe2/PtS2 heterostructures formed by PtS2 and MoSe2 monolayers. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2020.110679] [Citation(s) in RCA: 45] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Azzouz L, Halit M, Rérat M, Khenata R, Singh AK, Obeid M, Jappor HR, Wang X. Structural, electronic and optical properties of ABTe2 (A = Li, Na, K, Rb, Cs and B = Sc, Y, La): Insights from first-principles computations. J SOLID STATE CHEM 2019. [DOI: 10.1016/j.jssc.2019.120954] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Attia AA, Jappor HR. Tunable electronic and optical properties of new two-dimensional GaN/BAs van der Waals heterostructures with the potential for photovoltaic applications. Chem Phys Lett 2019. [DOI: 10.1016/j.cplett.2019.05.005] [Citation(s) in RCA: 44] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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