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Wang X, Zhuo S, Fu J, Li X, Zhao X, Jiang H, Lv G, Li P, Li J, Zhang WH, Ma W. Hybrid Ligand Polymerization for Weakly Confined Lead Halide Perovskite Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2023; 15:20208-20218. [PMID: 37040451 DOI: 10.1021/acsami.2c21464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Rational ligand passivation is essential to achieve a higher performance of weakly confined lead halide perovskite quantum dots (PQDs) via a mechanism of surface chemistry and/or microstrain. In situ passivation with 3-mercaptopropyltrimethoxysilane (MPTMS) produces CsPbBr3 PQDs with an enhanced photoluminescence quantum yield (PLQY, ΦPL) of up to 99%; meanwhile, charge transport of the PQD film can be enhanced by one order of magnitude. Herein, we examine the effect of the molecular structure of MPTMS as the ligand exchange agent in comparison to octanethiol. Both thiol ligands promote crystal growth of PQDs, inhibit nonradiative recombination, and cause blue-shifted PL, while the silane moiety of MPTMS manipulates surface chemistry and outperforms owing to its unique cross-linking chemistry characterized by FTIR vibrations at 908 and 1641 cm-1. Emergence of the diagnostic vibrations is ascribed to hybrid ligand polymerization arising from the silyl tail group that confers the advantages of narrower size dispersion, lower shell thickness, more static surface binding, and higher moisture resistance. In contrast, the superior electrical property of the thiol-passivated PQDs is mostly determined by the covalent S-Pb bonding on the interface.
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Affiliation(s)
- Xianghua Wang
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Shaoqi Zhuo
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Jing Fu
- Ningxia Key Laboratory of Photovoltaic Materials, Ningxia University, Yinchuan 750021, Ningxia, People's Republic of China
| | - Xuedong Li
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Xudong Zhao
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Hao Jiang
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Ge Lv
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Pengbo Li
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Jiafa Li
- Academy of Opto-Electric Technology, Special Display and Imaging Technology, Innovation Center of Anhui Province, National Engineering Laboratory of Special Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, People's Republic of China
| | - Wen-Hua Zhang
- School of Materials and Energy, Yunnan University, Kunming 650091, Yunnan, People's Republic of China
| | - Wei Ma
- Ningxia Key Laboratory of Photovoltaic Materials, Ningxia University, Yinchuan 750021, Ningxia, People's Republic of China
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Liu X, Zhu S, Chen X, Cui X, Cao J. Carbon Dioxide Captured on a Wet Si−C Composite Material with a Surfactant‐derived Carbon Film. ChemistrySelect 2022. [DOI: 10.1002/slct.202201281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Xiuwu Liu
- School of Chemical Engineering Hebei University of Technology 8 Guangrongdao Road, Hongqiao District Tianjin China 300130
| | - Shijie Zhu
- School of Chemical Engineering Hebei University of Technology 8 Guangrongdao Road, Hongqiao District Tianjin China 300130
| | - Xueqing Chen
- School of Chemical Engineering Hebei University of Technology 8 Guangrongdao Road, Hongqiao District Tianjin China 300130
| | - Xiaoyuan Cui
- School of Chemical Engineering Hebei University of Technology 8 Guangrongdao Road, Hongqiao District Tianjin China 300130
| | - Jilin Cao
- School of Chemical Engineering Hebei University of Technology 8 Guangrongdao Road, Hongqiao District Tianjin China 300130
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Wang X, Yang Y, Li X, Li W, Hu J, Zhang WH. In situ siloxane passivation of colloidal lead halide perovskite via hot injection for light-emitting diodes. OPTICS LETTERS 2022; 47:593-596. [PMID: 35103684 DOI: 10.1364/ol.447781] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2021] [Accepted: 12/13/2021] [Indexed: 06/14/2023]
Abstract
All-inorganic cesium lead halide perovskite (CsPbX3; X = Cl, Br) nanocrystals (NCs) are synthesized via a modified hot injection method using 3-mercaptopropyltrimethoxysilane (MPTMS), together with oleic acid and oleylamine, for in situ passivation of the surface defects. The surface chemistry, revealed by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS) techniques, shows an absence of Si-O-Si network and C-O groups on these in situ passivated CsPbX3 NCs, denoted as InMP-CsPbX3, which is in strong contrast to the counterpart NCs obtained via a postsynthesis exchange strategy. The x-ray diffraction (XRD) pattern indicates a lattice structure significantly strained from the cubic structure. The synthesis of these InMP-CsPbX3 NCs is highly reproducible, and the colloids are stable in nonpolar solvents. The emission wavelength of CsPb(Cl/Br)3 mixed halide perovskite NCs is tuned from 405 nm to 508 nm by reducing the nominal Cl/Br ratio, while the photoluminescence quantum yield (PLQY) is greatly enhanced over the whole spectral range. More importantly, the InMP-treatment is among the few strategies that are promising for electroluminescence in light-emitting diodes.
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