Sur les phases de type clathrate du silicium et des éléments apparentés (C, Ge, Sn) : Une approche historique

Stability and Physical Properties of Metastable Ba-Si Clathrates

In the present study, we have investigated the stability of different Ba-Si clathrates with pressure and temperature using DFT calculations and studied the stability of type I Ba8Si46 and type IX Ba24Si100 clathrates using high pressure─high temperature synthesis technique, calorimetry, and diffraction experiments. When increasing pressure, the type I Ba8Si46 clathrate and BaSi6 become more stable. In good qualitative agreement with experiments, the type IX Ba24Si100 clathrate becomes stable at a pressure of 1-2 GPa thanks to the pressure and thermal effect of both electronic and vibrational contributions. One can notice that the presence of Ba in the cages of type IX clathrate increases significantly the stability and the mechanical properties of type IX clathrate. We have determined the P-T existence domain of type IX Ba24Si100 clathrate from ex situ experiments, which was confirmed by in situ synchrotron X-ray experiments. At room pressure and under an oxidizing atmosphere, the type I Ba8Si46 and the type IX Ba24Si100 clathrates are stable up to about 560 °C and up to about 600 °C, respectively. The thermoelectric properties of type IX Ba24Si100 are also reported.

Conventional High-Temperature Superconductivity in Metallic, Covalently Bonded, Binary-Guest C-B Clathrates

Inspired by the synthesis of XB₃C₃ (X = Sr, La) compounds in the bipartite sodalite clathrate structure, density functional theory (DFT) calculations are performed on members of this family containing up to two different metal atoms. A DFT-chemical pressure analysis on systems with X = Mg, Ca, Sr, Ba reveals that the size of the metal cation, which can be tuned to stabilize the B-C framework, is key for their ambient-pressure dynamic stability. High-throughput density functional theory calculations on 105 Pm3̅ symmetry XYB₆C₆ binary-guest compounds (where X, Y are electropositive metal atoms) find 22 that are dynamically stable at 1 atm, expanding the number of potentially synthesizable phases by 19 (18 metals and 1 insulator). The density of states at the Fermi level and superconducting critical temperature, T_c, can be tuned by changing the average oxidation state of the metal atoms, with T_c being highest for an average valence of +1.5. KPbB₆C₆, with an ambient-pressure Eliashberg T_c of 88 K, is predicted to possess the highest T_c among the studied Pm3̅n XB₃C₃ or Pm3̅ XYB₆C₆ phases, and calculations suggest it may be synthesized using high-pressure high-temperature techniques and then quenched to ambient conditions.

A Novel Technique for Controlling Anisotropic Ion Diffusion: Bulk Single-Crystalline Metallic Silicon Clathrate

Na-free Si clathrates consisting only of Si cages are an allotrope of diamond-structured Si. This material is promising for various device applications, such as next-generation photovoltaics. The probable technique for synthesizing Na-free Si clathrates is to extract Na⁺ from the Si cages of Na₂₄ Si₁₃₆ . Vacuum annealing is presently a well-known conventional and effective approach for extracting Na. However, this study demonstrates that Na⁺ cannot be extracted from the surface of a single-crystalline type-II metallic Si clathrate (Na₂₄ Si₁₃₆ ) in areas deeper than 150 µm. Therefore, a novel method is developed to control anisotropic ion diffusion: this is effective for various compounds with a large difference in the bonding strength between their constituent elements, such as Na₂₄ Si₁₃₆ composed of covalent Si cages and weakly trapped Na⁺ . By skillfully exploiting the difference in the chemical potentials as a driving force, Na⁺ is homogeneously extracted regardless of the size of the single crystal while maintaining high crystallinity. Additionally, the proposed point defect model is evaluated via density functional theory, and the migration of Na⁺ between the Si cages is explained. It is expected that the developed experimental and computational techniques would significantly advance material design for synthesizing thermodynamically metastable materials.

Type-II Clathrate Na24-δ Ge136 from a Redox-Preparation Route

The metastable type-II clathrate Na24-δ Ge136 was obtained from Na12 Ge17 by applying a two-step procedure. At first, Na12 Ge17 was reacted at 70 °C with a solution of benzophenone in the ionic liquid (IL) 1,3-dibutyl-2-methylimidazolium-bis(trifluoromethylsulfonyl) azanide. The IL was inert towards Na12 Ge17 , but capable of dissolving the sodium salts formed in the redox reaction. By annealing at 340 °C under an argon atmosphere, the X-ray amorphous intermediate product was transformed to crystalline Na24-δ Ge136 (δ≈2) and α-Ge in an about 1 : 1 mass ratio. The product was characterized by X-ray powder diffraction, chemical analysis, and 23 Na solid-state NMR spectroscopy. Metallic properties of Na24-δ Ge136 were revealed by a significant Knight shift of the 23 Na NMR signals and by a Pauli-paramagnetic contribution to the magnetic susceptibility. At room temperature, Na24-δ Ge136 slowly ages, with a tendency to volume decrease and sodium loss.

Cage Adaption by High-Pressure Synthesis: The Clathrate-I Borosilicide Rb8B8Si38

Rb₈B₈Si₃₈ forms under high-pressure, high-temperature conditions at p = 8 GPa and T = 1273 K. The new compound (space group Pm3̅n, a = 9.9583(1) Å) is the second example for a clathrate-I borosilicide. The phase is inert against strong acids and bases and thermally stable up to 1300 K at ambient pressure. (Rb⁺)₈(B^-)₈(Si⁰)₃₈ is electronically balanced, diamagnetic, and shows semiconducting behavior with moderate Seebeck coefficient below 300 K. Chemical bonding analysis by the electron localizability approach confirms the description of Rb₈B₈Si₃₈ as Zintl phase.

The impact of boron atoms on clathrate-I silicides: composition range of the borosilicide K8-xBySi46-y

The clathrate-I borosilicide K_8-xB_ySi_46-y (0.8 ≤x≤ 1.2 and 6.4 ≤y≤ 7.2; space group Pm3[combining macron]n) was prepared in sealed tantalum ampoules between 900 °C and 1000 °C. By high-pressure preparation at 8 GPa and 1000 °C, a higher boron content is achieved (x = 0.2, y = 7.8). Crystal structure and composition were established from X-ray diffraction data, chemical analysis, WDX spectroscopy, and confirmed by ¹¹B and ²⁹Si NMR, and magnetic susceptibility measurements. The compositions are electron-balanced according to the Zintl rule within one estimated standard deviation. The lattice parameter varies with composition from a = 9.905 Å for K_7.85(2)B_7.8(1)Si_38.2(1) to a = 9.968(1) Å for K_6.80(2)B_6.4(5)Si_39.6(5).

Single crystal growth and structure analysis of type-I (Na/Sr)-(Ga/Si) quaternary clathrates

Single crystals of (Na/Sr)-(Ga/Si) quaternary type-I clathrates, Na8-y Sr y Ga x Si46-x , were synthesized by evaporating Na from a mixture of Na-Sr-Ga-Si-Sn in a 6 : 0.5 : 1 : 2 : 1 molar ratio at 773 K for 12 h in an Ar atmosphere. Electron-probe microanalysis and single-crystal X-ray diffraction revealed that three crystals from the same product were Na8-y Sr y Ga x Si46-x with x and y values of 7.6, 2.96; 8.4, 3.80; and 9.1, 4.08. It was also shown that increasing the Sr and Ga contents increased the electrical resistivity of the crystal from 0.34 to 1.05 mΩ cm at 300 K.

Na-Ga-Si type-I clathrate single crystals grown via Na evaporation using Na-Ga and Na-Ga-Sn fluxes

Single crystals of a Na–Ga–Si clathrate, Na₈Ga_5.70Si_40.30, of size 2.9 mm were grown via the evaporation of Na from a Na–Ga–Si melt with the molar ratio of Na : Ga : Si = 4 : 1 : 2 at 773 K for 21 h under an Ar atmosphere. The crystal structure was analyzed using X-ray diffraction with the model of the type-I clathrate (cubic, a = 10.3266(2) Å, space group Pm3̄n, no. 223). By adding Sn to a Na–Ga–Si melt (Na : Ga : Si : Sn = 6 : 1 : 2 : 1), single crystals of Na₈Ga_xSi_46−x (x = 4.94–5.52, a = 10.3020(2)–10.3210(3) Å), with the maximum size of 3.7 mm, were obtained via Na evaporation at 723–873 K. The electrical resistivities of Na₈Ga_5.70Si_40.30 and Na₈Ga_4.94Si_41.06 were 1.40 and 0.72 mΩ cm, respectively, at 300 K, and metallic temperature dependences of the resistivities were observed. In the Si L_2,3 soft X-ray emission spectrum of Na₈Ga_5.70Si_40.30, a weak peak originating from the lowest conduction band in the undoped Si₄₆ was observed at an emission energy of 98 eV.

Single crystals of a Na–Ga–Si clathrate, Na₈Ga_4.94Si_41.06, of size 3.7 mm were grown via the evaporation of Na from a Na–Ga–Si–Sn melt with the molar ratio of Na : Ga : Si : Sn = 6 : 1 : 2 : 1 at 873 K for 3 h under an Ar atmosphere.

A type-II clathrate with a Li-Ge framework

Na

Type-I silicon clathrates containing lithium

The intermetallic phase [Li

Binary Alkali-Metal Silicon Clathrates by Spark Plasma Sintering: Preparation and Characterization

The binary intermetallic clathrates K_8-xSi₄₆ (x = 0.4; 1.2), Rb_6.2Si₄₆, Rb_11.5Si₁₃₆ and Cs_7.8Si₁₃₆ were prepared from M₄Si₄ (M = K, Rb, Cs) precursors by spark-plasma route (SPS) and structurally characterized by Rietveld refinement of PXRD data. The clathrate-II phase Rb_11.5Si₁₃₆ was synthesized for the first time. Partial crystallographic site occupancy of the alkali metals, particularly for the smaller Si₂₀ dodecahedra, was found in all compounds. SPS preparation of Na₂₄Si₁₃₆ with different SPS current polarities and tooling were performed in order to investigate the role of the electric field on clathrate formation. The electrical and thermal transport properties of K_7.6Si₄₆ and K_6.8Si₄₆ in the temperature range 4–700 K were investigated. Our findings demonstrate that SPS is a novel tool for the synthesis of intermetallic clathrate phases that are not easily accessible by conventional synthesis techniques.

I(8)Sb(10)Ge(36)

Single crystals of the title compound, octa­iodide deca­anti­monate hexa­tria­conta­germanide, were grown by chemical transport reactions. The structure is isotypic with the analogous clathrates-I. In this structure, the (Ge,Sb)₄₆ framework consists of statistically occupied Ge and Sb sites that atoms form bonds in a distorted tetra­hedral arrangement. They form polyhedra that are covalently bonded to each other by shared faces. There are two polyhedra of different sizes, viz. a (Ge,Sb)₂₀ dodeca­hedron and a (Ge,Sb)₂₄ tetra­cosa­hedron in a 1:3 ratio. The guest atom (iodine) resides inside these polyhedra with symmetry m3 (Wyckoff position 2a) and 2m (Wyckoff position 2d), respectively.