Study of Si doped VO 2 thin films for solar thermal applications

Harnessing the Metal-Insulator Transition of VO2 in Neuromorphic Computing

Future-generation neuromorphic computing seeks to overcome the limitations of von Neumann architectures by colocating logic and memory functions, thereby emulating the function of neurons and synapses in the human brain. Despite remarkable demonstrations of high-fidelity neuronal emulation, the predictive design of neuromorphic circuits starting from knowledge of material transformations remains challenging. VO2 is an attractive candidate since it manifests a near-room-temperature, discontinuous, and hysteretic metal-insulator transition. The transition provides a nonlinear dynamical response to input signals, as needed to construct neuronal circuit elements. Strategies for tuning the transformation characteristics of VO2 based on modification of material properties, interfacial structure, and field couplings, are discussed. Dynamical modulation of transformation characteristics through in situ processing is discussed as a means of imbuing synaptic function. Mechanistic understanding of site-selective modification; external, epitaxial, and chemical strain; defect dynamics; and interfacial field coupling in modifying local atomistic structure, the implications therein for electronic structure, and ultimately, the tuning of transformation characteristics, is emphasized. Opportunities are highlighted for inverse design and for using design principles related to thermodynamics and kinetics of electronic transitions learned from VO2 to inform the design of new Mott materials, as well as to go beyond energy-efficient computation to manifest intelligence.

Element doping: a marvelous strategy for pioneering the smart applications of VO2

Smart materials are leading the future of materials by virtue of their autonomous response behavior to external stimuli; it is widely believed their development and application will bring a new revolution. Among them, vanadium dioxide (VO₂) is a special one showing a unique multi-stimulus responsive metal-insulator transition (MIT) accompanied by a structural phase transition (SPT) with striking changes of physical properties including optical, electrical and thermal properties, etc., making it ideal for smart windows, micro-bolometers, actuators, etc. Since the attractive performances of VO₂ are rooted in MIT behavior (coupled with SPT), element doping becomes a powerful tool in tailoring VO₂ performance. Oriented on the practical requirements, element-doped VO₂ is more promising and competitive in terms of performance, prospect, and cost. Here we focus specifically on element-doped VO₂, the recent progress and potential challenges of which are discussed. We devote attention to the crucial roles of element doping in modulating the properties and driving the practicality of VO₂, aiming to inspire current research to pioneer new applications of VO₂.

Doubling of the Phase Transition Temperature of VO2 by Fe Doping

Vanadium dioxide (VO₂) undergoes a fully reversible first-order metal-insulator transition from the M1 monoclinic phase (P2₁/c) to a high-temperature tetragonal phase (P4₂/mnm) at around 68 °C. Modulation of the phase transition of VO₂ by chemical doping is of fundamental and technological interest. Here, we report the synthesis of highly crystallized Fe-doped VO₂ powders by a carbo-thermal reduction process. The impact of Fe doping on the structural and phase transition of VO₂ is studied. The as-prepared Fe-doped VO₂ samples crystallize in the M2 monoclinic form (C2/m), which is linked to segregation of the doping ions in the V2 zigzag chains. A large increase in the transition temperature to 134 °C is observed, which does correspond to a breakthrough in VO₂-type thermochromic materials.

Modelling the enthalpy change and transition temperature dependence of the metal-insulator transition in pure and doped vanadium dioxide

We compare various calculation methods to determine the electronic structures and energy differences of the phases of VO2. We show that density functional methods in the form of GGA+U are able to describe the enthalpy difference (latent heat) between the rutile and M1 phases of VO2, and the effect of doping on the transition temperature and on the band gap of the M1 phase. An enthalpy difference of ΔE0 = -44.2 meV per formula unit, similar to the experimental value, is obtained if the randomly oriented spins of the paramagnetic rutile phase are treated by a non-collinear spin density functional calculation. The predicted change in the transition temperature of VO2 for Ge, Si or Mg doping is calculated and is in good agreement with the experiment data.