Low temperature atomic layer deposited molybdenum nitride-Ni-foam composite: An electrode for efficient charge storage

Atomic Layer Deposition-A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors

Atomic layer deposition (ALD) has become the most widely used thin-film deposition technique in various fields due to its unique advantages, such as self-terminating growth, precise thickness control, and excellent deposition quality. In the energy storage domain, ALD has shown great potential for supercapacitors (SCs) by enabling the construction and surface engineering of novel electrode materials. This review aims to present a comprehensive outlook on the development, achievements, and design of advanced electrodes involving the application of ALD for realizing high-performance SCs to date, as organized in several sections of this paper. Specifically, this review focuses on understanding the influence of ALD parameters on the electrochemical performance and discusses the ALD of nanostructured electrochemically active electrode materials on various templates for SCs. It examines the influence of ALD parameters on electrochemical performance and highlights ALD's role in passivating electrodes and creating 3D nanoarchitectures. The relationship between synthesis procedures and SC properties is analyzed to guide future research in preparing materials for various applications. Finally, it is concluded by suggesting the directions and scope of future research and development to further leverage the unique advantages of ALD for fabricating new materials and harness the unexplored opportunities in the fabrication of advanced-generation SCs.

Sputter-Deposited Binder-Free Nanopyramidal Cr/γ-Mo2N TFEs for High-Performance Supercapacitors

Due to their outstanding power density, long cycle life and low cost, supercapacitors have gained much interest. As for supercapacitor electrodes, molybdenum nitrides show promising potential. Molybdenum nitrides, however, are mainly prepared as nanopowders via a chemical route and require binders for the manufacture of electrodes. Such electrodes can impair the performance of supercapacitors. Herein, binder-free chromium (Cr)-doped molybdenum nitride (Mo₂N) TFEs having different Cr concentrations are prepared via a reactive co-sputtering technique. The Cr-doped Mo₂N films prepared have a cubic phase structure of γ-Mo₂N with a minor shift in the (111) plane. While un-doped Mo₂N films exhibit a spherical morphology, Cr-doped Mo₂N films demonstrate a clear pyramid-like surface morphology. The developed Cr-doped Mo₂N films contain 0-7.9 at.% of Cr in Mo₂N lattice. A supercapacitor using a Cr-doped Mo₂N electrode having the highest concentration of Cr reveals maximum areal capacity of 2780 mC/cm², which is much higher than that of an un-doped Mo₂N electrode (110 mC/cm²). Furthermore, the Cr-doped Mo₂N electrode demonstrates excellent cycling stability, achieving ~ 94.6% capacity retention for about 2000 cycles. The reactive co-sputtering proves to be a suitable technique for fabrication of binder-free TFEs for high-performance energy storage device applications.

Hydrogen Evolution Reaction by Atomic Layer-Deposited MoNx on Porous Carbon Substrates: The Effects of Porosity and Annealing on Catalyst Activity and Stability

Molybdenum-based compounds are considered as a potential replacement for expensive precious-metal electrocatalysts for the hydrogen evolution reaction (HER) in acid electrolytes. However, coating of thin films of molybdenum nitride or carbide on a large-area self-standing substrate with high precision is still challenging. Here, MoN_x is uniformly coated on carbon cloth (CC) and nitrogen-doped carbon (NC)-modified CC (NCCC) substrates by atomic layer deposition (ALD). The as-deposited film has a nanocrystalline character close to amorphous and a composition of approximately Mo₂ N with significant oxygen contamination, mainly at the surface. Among the as-prepared ALD-MoN_x electrodes, the MoN_x /NCCC has the highest HER activity (overpotential η≈236 mV to achieve 10 mA cm^-2 ) owing to the high surface area and porosity of the NCCC substrate. However, the durability of the electrode is poor, owing to the poor adhesion of NC powder on CC. Annealing MoN_x /NCCC in H₂ atmosphere at 400 °C improves both the activity and durability of the electrode without significant change in the phase or porosity. Annealing at an elevated temperature of 600 °C results in formation of a Mo₂ C phase that further enhances the activity (η≈196 mV to achieve 10 mA cm^-2 ), although there is a huge reduction in the porosity of the electrode as a consequence of the annealing. The structure of the electrode is also systematically investigated by electrochemical impedance spectroscopy (EIS). A deviation in the conventional Warburg impedance is observed in EIS of the NCCC-based electrode and is ascribed to the change in the H⁺ ion diffusion characteristics, owing to the geometry of the pores. The change in porous nature with annealing and the loss in porosity are reflected in the EIS of H⁺ ion diffusion observed at high-frequency. The current work establishes a better understanding of the importance of various parameters for a highly active HER electrode and will help the development of a commercial electrode for HER using the ALD technique.

Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices

We present an atomic layer deposition (ALD) process for the synthesis of tin nitride (SnN_x) thin films using tetrakis(dimethylamino) tin (TDMASn, Sn(NMe₂)₄) and ammonia (NH₃) as the precursors at low deposition temperatures (70-200 °C). This newly developed ALD scheme exhibits ideal ALD features such as self-limited film growth at 150 °C. The growth per cycle (GPC) was found to be ∼0.21 nm/cycle at 70 °C, which decreased with increasing deposition temperature. Interestingly, when the deposition temperature was between 125 and 180 °C, the GPC remained almost constant at ∼0.10 nm/cycle, which suggests an ALD temperature window, whereas upon further increasing the temperature to 200 °C, the GPC considerably decreased to ∼0.04 nm/cycle. Thermodynamic analysis via density functional theory calculations showed that the self-saturation of TDMASn would occur on an NH₂-terminated surface. Moreover, it also suggests that the condensation of a molecular precursor and the desorption of surface *NH₂ moieties would occur at lower and higher temperatures outside the ALD window, respectively. Thanks to the characteristics of ALD, this process could be used to conformally and uniformly deposit SnN_x onto an ultranarrow dual-trench Si structure (minimum width: 15 nm; aspect ratio: ∼6.3) with ∼100% step coverage. Several analysis tools such as transmission electron microscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and secondary-ion mass spectrometry were used to characterize the film properties under different deposition conditions. XRD showed that a hexagonal SnN phase was obtained at a relatively low deposition temperature (100-150 °C), whereas cubic Sn₃N₄ was formed at a higher deposition temperature (175-200 °C). The stoichiometry of these thermally grown ALD-SnN_x films (Sn-to-N ratio) deposited at 150 °C was determined to be ∼1:0.93 with negligible impurities. The optoelectronic properties of the SnN_x films, such as the band gap, wavelength-dependent refractive index, extinction coefficient, carrier concentration, and mobility, were further evaluated via spectroscopic ellipsometry analysis. Finally, ALD-SnN_x-coated Ni-foam (NF) and hollow carbon nanofibers were successfully used as free-standing electrodes in electrochemical supercapacitors and in Li-ion batteries, which showed a higher charge-storage time (about eight times greater than that of the uncoated NF) and a specific capacity of ∼520 mAh/g after 100 cycles at 0.1 A/g, respectively. This enhanced performance might be due to the uniform coverage of these substrates by ALD-SnN_x, which ensures good electric contact and mechanical stability during electrochemical reactions.

Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode

Layered Sn-based chalcogenides and heterostructures are widely used in batteries and photocatalysis, but its utilizations in a supercapacitor is limited by its structural instability and low conductivity. Here, SnSx thin films are directly and conformally deposited on a three-dimensional (3D) Ni-foam (NF) substrate by atomic layer deposition (ALD), using tetrakis(dimethylamino)tin [TDMASn, ((CH3)2N)4Sn] and H2S that serves as an electrode for supercapacitor without any additional treatment. Two kinds of ALD-SnSx films grown at 160 °C and 180 °C are investigated systematically by X-ray diffractometry, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy (TEM). All of the characterization results indicate that the films deposited at 160 °C and 180 °C predominantly consist of hexagonal structured-SnS2 and orthorhombic-SnS phases, respectively. Moreover, the high-resolution TEM analyses (HRTEM) reveals the (001) oriented polycrystalline hexagonal-SnS2 layered structure for the films grown at 160 °C. The double layer capacitance with the composite electrode of SnSx@NF grown at 160 °C is higher than that of SnSx@NF at 180 °C, while pseudocapacitive Faradaic reactions are evident for both SnSx@NF electrodes. The superior performance as an electrode is directly linked to the layered structure of SnS2. Further, the optimal thickness of ALD-SnSx thin film is found to be 60 nm for the composite electrode of SnSx@NF grown at 160 °C by controlling the number of ALD cycles. The optimized SnSx@NF electrode delivers an areal capacitance of 805.5 mF/cm2 at a current density of 0.5 mA/cm2 and excellent cyclic stability over 5000 charge/discharge cycles.

Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy

Ohmic contact in m-InP₃ and G or Ni interface is achieved by introducing intrinsic defects and inserting a buffer layer.