Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy

Electrochemical recovery of tellurium from metallurgical industrial waste

Abstract

The current study outlines the electrochemical recovery of tellurium from a metallurgical plant waste fraction, namely Doré slag. In the precious metals plant, tellurium is enriched to the TROF (Tilting, Rotating Oxy Fuel) furnace slag and is therefore considered to be a lost resource—although the slag itself still contains a recoverable amount of tellurium. To recover Te, the slag is first leached in aqua regia, to produce multimetal pregnant leach solution (PLS) with 421 ppm of Te and dominating dissolved elements Na, Ba, Bi, Cu, As, B, Fe and Pb (in the range of 1.4–6.4 g dm−3), as well as trace elements at the ppb to ppm scale. The exposure of slag to chloride-rich solution enables the formation of cuprous chloride complex and consequently, a decrease in the reduction potential of elemental copper. This allows improved selectivity in electrochemical recovery of Te. The results suggest that electrowinning (EW) is a preferred Te recovery method at concentrations above 300 ppm, whereas at lower concentrations EDRR is favoured. The purity of recovered tellurium is investigated with SEM–EDS (scanning electron microscope–energy dispersion spectroscopy). Based on the study, a new, combined two-stage electrochemical recovery process of tellurium from Doré slag PLS is proposed: EW followed by EDRR.

Graphic abstract

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.

Formation and Characterization of Sb2Te3 Nanofilms on Pt by Electrochemical Atomic Layer Epitaxy

A nanocrystalline Sb2Te3 VA-VIA group compound thin film was grown via the route of electrochemical atomic layer epitaxy (ECALE) in this work for the first time. The electrochemical behavior of Te and Sb on Pt, Te on Sb-covered Pt, and Sb on Te-covered Pt was studied by methods of cyclic voltammetry, anode potentiodynamic scanning, and coulometry. A steady deposition of the Sb2Te3 compound could be attained after negatively stepped adjusting of the UPD potentials of Sb and Te on Pt in each of the first 40 depositing cycles. The structure of the deposit was proven to be the Sb2Te3 compound by X-ray diffraction. The 2:3 stoichiometric ratio of Sb to Te was verified by EDX quantitative analysis, which is consistent with the result of coulometric analysis. A nanocystalline microstructure was observed for the Sb2Te3 deposits, and the average grain size is about 20 nm. Cross-sectional SEM observation shows an interface layer about 19 nm in thickness sandwiched between the Sb2Te3 nanocrystalline deposit and the Pt substrate surface. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy and it is blueshifted in comparison with that of the bulk Sb2Te3 single crystal because of its nanocrystalline microstructure.