Electrochemical impedance and solid-state electrical characterization of silicon (111) modified with ω-functionalized alkyl monolayers

Electrochemical impedance study of GaAs surface charge modulation through the deprotonation of carboxylic acid monolayers

Modifications to the space charge region of p+ and p-GaAs due to surface charge modulation by the pH-induced deprotonation of bound carboxylic acid terminal monolayers were studied by electrochemical impedance spectroscopy and correlated to flat-band potential measurements from Mott-Schottky plots. We infer that the negative surface dipole formed on GaAs due to monolayer deprotonation causes an enhancement of the downward interfacial band bending. The space charge layer modifications were correlated to intermolecular electrostatic interactions and semiconductor depletion characteristics.

Preparation of ideal molecular junctions: depositing non-invasive gold contacts on molecularly modified silicon

Recent advances in creating rectifying gold|monolayer|silicon (Au-M-Si) junctions (namely, molecular silicon diodes) are reviewed. It is known that direct deposition of gold contacts onto molecular monolayers covalently bonded to silicon surfaces causes notable disruption to the junction structure, resulting in deteriorated performance and poor reproducibility that are unsuitable for practical applications. In the past few years, several new experimental approaches have been explored to minimize or eliminate such damage, including the "indirect" evaporation method and the pre-deposition of a protective "non-penetrating" metal. To enhance the interactions at the gold-monolayer interface, head-groups that allow bonding to gold are used to maintain the monolayer integrity. Construction of the device via flip-chip lamination and the modified polymer-assisted lift-off techniques also prohibits monolayer damage. Refining the fabrication and design techniques towards reliable molecular junctions is crucial if they are to be used in nanoelectronics for the purpose of miniaturization.