Electrochemical characterization of the underpotential deposition of tellurium on Au electrode

Electro-Design of Bimetallic PdTe Electrocatalyst for Ethanol Oxidation: Combined Experimental Approach and Ab Initio Density Functional Theory (DFT)-Based Study

An alternative electrosynthesis of PdTe, using the electrochemical atomic layer deposition (E-ALD) method, is reported. The cyclic voltammetry technique was used to analyze Au substrate in copper (Cu²⁺), and a tellurous (Te⁴⁺) solution was used to identify UPDs and set the E-ALD cycle program. Results obtained using atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques reveal the nanometer-sized flat morphology of the systems, indicating the epitaxial characteristics of Pd and PdTe nanofilms. The effect of the Pd:Te ratio on the crystalline structure, electronic properties, and magnetic properties was investigated using a combination of density functional theory (DFT) and X-ray diffraction techniques. Te-containing electrocatalysts showed improved peak current response and negative onset potential toward ethanol oxidation (5 mA; -0.49 V) than Pd (2.0 mA; -0.3 V). Moreover, DFT ab initio calculation results obtained when the effect of Te content on oxygen adsorption was studied revealed that the d-band center shifted relative to the Fermi level: -1.83 eV, -1.98 eV, and -2.14 eV for Pd, Pd₃Te, and Pd₃Te₂, respectively. The results signify the weakening of the CO-like species and the improvement in the PdTe catalytic activity. Thus, the electronic and geometric effects are the descriptors of Pd₃Te₂ activity. The results suggest that Pd₂Te₂ is a potential candidate electrocatalyst that can be used for the fabrication of ethanol fuel cells.

Ultra-Thin Platinum Deposits by Surface-Limited Redox Replacement of Tellurium

Platinum is the most employed electrocatalyst for the reactions taking place in energy converters, such as the oxygen reduction reaction in proton exchange membrane fuel cells, despite being a very low abundant element in the earth’s crust and thus extremely expensive. The search for more active electrocatalysts with ultra-low Pt loading is thus a very active field of investigation. Here, surface-limited redox replacement (SLRR) that utilizes the monolayer-limited nature of underpotential deposition (UPD) was used to prepare ultrathin deposits of Pt, using Te as sacrificial metal. Cyclic voltammetry and anodic potentiodynamic scanning experiments have been performed to determine the optimal deposition conditions. Physicochemical and electrochemical characterization of the deposited Pt was carried out. The deposit comprises a series of contiguous Pt islands that form along the grain interfaces of the Au substrate. The electrochemical surface area (ECSA) of the Pt deposit obtained after 5 replacements, estimated to be 18 m²/g, is in agreement with the ECSA of extended surface catalysts on flat surfaces.

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.