Adsorption behavior of redox-active suppressor additives: Combined electrochemical and STM studies

Uncovering the Dissociative Adsorption of the Leveler Janus Green B on Cu Electrodes at the Molecular Level

The interfacial adsorption structure of an organic leveler decides its functionality in Cu interconnect electroplating and is yet far from clear. In this work, in situ attenuated total reflection surface-enhanced infrared absorption spectroscopy (ATR-SEIRAS) and electrochemical quartz crystal microbalance (EQCM) in conjunction with density functional theory (DFT) calculations are applied to unravel the interfacial adsorption of the classic dye leveler Janus Green B (JGB) at a Cu electrode and understand its polarization property against Cu electrodeposition from an adsorption structure perspective. ATR-SEIRAS measurements and DFT calculations reveal that the N=N bond of the JGB molecule splits via reductive hydrogenation, forming two fragments of contrasting adsorption configurations. JGB exhibits the strongest inhibition effect on Cu deposition among all the tested additives including individual and mixed fragments, due to the highest coverage of organic adsorbates from JGB dissociation, as measured by EQCM. This work highlights the advantage of surface sensitive analytical tools in understanding the structure-performance of levelers.

Controlled Growth and Self-Assembly of Multiscale Organic Semiconductor

Currently, organic semiconductors (OSs) are widely used as active components in practical devices related to energy storage and conversion, optoelectronics, catalysis, and biological sensors, etc. To satisfy the actual requirements of different types of devices, chemical structure design and self-assembly process control have been synergistically performed. The morphology and other basic properties of multiscale OS components are governed on a broad scale from nanometers to macroscopic micrometers. Herein, the up-to-date design strategies for fabricating multiscale OSs are comprehensively reviewed. Related representative works are introduced, applications in practical devices are discussed, and future research directions are presented. Design strategies combining the advances in organic synthetic chemistry and supramolecular assembly technology perform an integral role in the development of a new generation of multiscale OSs.

Electrodeposition of copper on a Pt(111) electrode in sulfuric acid containing poly(ethylene glycol) and chloride ions as probed by in situ STM

This study employed real-time in situ STM imaging to examine the adsorption of PEG molecules on Pt(111) modified by a monolayer of copper adatoms and the subsequent bulk Cu deposition in 1 M H(2)SO(4) + 1 mM CuSO(4)+ 1 mM KCl + 88 μM PEG. At the end of Cu underpotential deposition (~0.35 V vs Ag/AgCl), a highly ordered Pt(111)-(√3 × √7)-Cu + HSO(4)(-) structure was observed in 1 M H(2)SO(4) + 1 mM CuSO(4). This adlattice restructured upon the introduction of poly(ethylene glycol) (PEG, molecular weight 200) and chloride anions. At the onset potential for bulk Cu deposition (~0 V), a Pt(111)-(√3 × √3)R30°-Cu + Cl(-) structure was imaged with a tunneling current of 0.5 nA and a bias voltage of 100 mV. Lowering the tunneling current to 0.2 nA yielded a (4 × 4) structure, presumably because of adsorbed PEG200 molecules. The subsequent nucleation and deposition processes of Cu in solution containing PEG and Cl(-) were examined, revealing the nucleation of 2- to 3-nm-wide CuCl clusters on an atomically smooth Pt(111) surface at overpotentials of less than 50 mV. With larger overpotential (η > 150 mV), Cu deposition seemed to bypass the production of CuCl species, leading to layered Cu deposition, starting preferentially at step defects, followed by lateral growth to cover the entire Pt electrode surface. These processes were observed with both PEG200 and 4000, although the former tended to produce more CuCl nanoclusters. Raising [H(2)SO(4)] to 1 M substantiates the suppressing effect of PEG on Cu deposition. This STM study provided atomic- or molecular-level insight into the effect of PEG additives on the deposition of Cu.