Large-area plasmonic electrodes and active plasmonic devices generated by electrochemical processes

Programmed Heterostructures for Enhanced Electrical Conductivity

Interfacial electron transport in multicomponent systems plays a crucial role in controlling electrical conductivity. Organic-inorganic heterostructures electronic devices where all the entities are covalently bonded to each other can reduce interfacial electrical resistance, thus suitable for low-power consumption electronic operations. Programmed heterostructures of covalently bonded interfaces between ITO-ethynylbenzene (EB) and EB-zinc ferrite (ZF) nanoparticles, a programmed structure showing 67 978-fold enhancement of electrical current as compared to pristine NPs-based two terminal devices are created. An electrochemical approach is adopted to prepare nearly π-conjugated EB oligomer films of thickness ≈26 nm on ITO-electrode on which ZF NPs are chemically attached. A "flip-chip" method is employed to combine two EB-ZnFe2O4 NPs-ITO to probe electrical conductivity and charge conduction mechanism. The EB-ZnFe2O4 NPs exhibit strong electronic coupling at ITO-EB and EB-NPs with an energy barrier of 0.13 eV between the ITO Fermi level and the LUMO of EB-ZF NPs for efficient charge transport. Both the DC and AC-based electrical measurements manifest a low resistance at ITO-EB and EB-ZF NPs, revealing enhanced electrical current at ± 1.5 V. The programmed heterostructure devices can meet a strategy to create well-controlled molecular layers for electronic applications toward miniaturized components that shorten charge carrier distance, and interfacial resistance.

Confinement Effect of Plasmon for the Fabrication of Interconnected AuNPs through the Reduction of Diazonium Salts

This paper describes a rapid bottom-up approach to selectively functionalize gold nanoparticles (AuNPs) on an indium tin oxide (ITO) substrate using the plasmon confinement effect. The plasmonic substrates based on a AuNP-free surfactant were fabricated by electrochemical deposition. Using this bottom-up technique, many sub-30 nm spatial gaps between the deposited AuNPs were randomly generated on the ITO substrate, which is difficult to obtain with a top-down approach (i.e., E-beam lithography) due to its fabrication limits. The 4-Aminodiphenyl (ADP) molecules were grafted directly onto the AuNPs through a plasmon-induced reduction of the 4-Aminodiphenyl diazonium salts (ADPD). The ADP organic layer preferentially grew in the narrow gaps between the many adjacent AuNPs to create interconnected AuNPs. This novel strategy opens up an efficient technique for the localized surface modification at the nanoscale over a macroscopic area, which is anticipated to be an advanced nanofabrication technique.

Plasmon-Induced Conductance Switching of an Electroactive Conjugated Polymer Nanojunction

A plasmonic molecular electronic device, consisting of poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires bridging an ultramicroelectrode and an indium tin oxide (ITO) substrate covered by gold nanoparticles (Au NPs), has been developed. Light irradiation of this device has a dramatic impact on its conductance. Polymer strands, maintained electrochemically in their oxidized, conducting state, reversibly switch to their insulating state upon irradiation by visible-wavelength light, resulting in a sharp decrease in the conductance. The high-conductance state is restored when the light is turned off. Switching depends on the wavelength and the intensity of the incident light. It is due to reversible reduction of the nanosized region of PEDOT nanowires in contact with a gold NP and is attributed to plasmon-induced hot-electron injection into the PEDOT. The high/low conductance ratio can be as great as 1000, and switching requires low light intensity (220 W/m²). These results could open the way to the design of a new family of optoelectronic switches.

Tailored Surfaces/Assemblies for Molecular Plasmonics and Plasmonic Molecular Electronics

Molecular plasmonics uses and explores molecule-plasmon interactions on metal nanostructures for spectroscopic, nanophotonic, and nanoelectronic devices. This review focuses on tailored surfaces/assemblies for molecular plasmonics and describes active molecular plasmonic devices in which functional molecules and polymers change their structural, electrical, and/or optical properties in response to external stimuli and that can dynamically tune the plasmonic properties. We also explore an emerging research field combining molecular plasmonics and molecular electronics.

Plasmon-Induced Nanolocalized Reduction of Diazonium Salts

Surface grafting from diazonium solutions triggered by localized surface plasmon has been investigated. An organic layer that is 20-30 nm thick is easily grafted onto gold nanoparticles (AuNPs) by visible-light illumination in a few minutes without any reducing agent or molecular photocatalyst. Grafting depends on the wavelength and polarization of the incident light. As a consequence, the orientation of the growth of the layer deposited on the AuNPs can be controlled by polarized light. Grafting is also highly enhanced between adjacent AuNPs or at the corners of triangular AuNPs, that is, in plasmonic hot spots. These results clearly demonstrate plasmon enhancement and strongly suggest that the transfer of hot electrons from the excited plasmonic NPs to the diazonium is the main mechanism. They also confirm that localized surface plasmon resonance can induce nanolocalized electrochemical reactions, thus contributing to the field of "plasmonic electrochemistry".