Electrochemical Preparation of In-Silicon Hierarchical Networks of Regular Out-Of-Plane Macropores Interconnected by Secondary In-Plane Pores Through Controlled Inhibition of Breakdown Effects

Facile fabrication of sponge-like porous micropillar arrays via an electrochemical process

A large variety of synthetic methods have been developed for hierarchically porous materials by which the performance of a wide range of applications can be dramatically enhanced. Herein, hierarchically porous micropillar arrays are demonstrated by employing electrochemical etching to silicon micropillars. The approach relies on the steering of current flow through the three-dimensional silicon-electrolyte interface to enable nanopores to grow on the entire surface of the micropillars, simultaneously. The pores grow perpendicular to the surface of the micropillars, whereas the pore diameter and porosity vary depending on the locations of the surfaces. The finite element analysis shows that the spatial variation of the pore diameter and porosity is determined by the distribution of current density. Further, the thickness of the porous layer can be tuned by etching time so that sponge-like porous structures are conveniently obtained by regulating the etching time. In addition to the effect of current density flowing through the etched surfaces, the growth of pores also depends on the crystal orientations of the etched surfaces. The etching results on square micropillar arrays and microgroove arrays show that the growth direction and rate of nanopores inside the microstructure also depend on the exposed crystal planes. The facile characteristics of the fabrication method can serve as an effective route for a wide range of applications of porous materials with enhanced capabilities.

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

The anodic dissolution of silicon in acidic electrolytes is a well-known technology enabling the silicon machining to be accurately controlled down to the micrometer scale in low-doped n-type silicon electrodes. Attempts to scale down this technology to the submicrometer scale has shown to be challenging, though it premises to enable the fabrication of meso and nano structures/systems that would greatly impact the fields of biosensors and nanomedicine. In this work, we report on the electrochemical etching at high anodic voltages (up to 40 V) of two-dimensional regular arrays of millions pores per square centimeter (up to 30 × 10⁶ cm^-2) with sub-micrometric diameter (down to ~860 nm), high depth (up to ~40 μm), and high aspect-ratio (up to ~45) using low-doped n-type silicon electrodes (resistivity 3-8 Ω cm). The use of high anodic voltages, which are over one order of magnitude higher than that commonly used in electrochemical etching of silicon, tremendously improves hole focusing at the pore tips during the etching and enables, in turn, the control of electrochemical etching of submicrometer-sized pores when spatial period reduces below 2 μm. A theoretical model allows experimental results to be interpreted in terms of an electric-field-enhanced focusing of holes at the tip apex of the pores at high anodic voltages, with respect to the pore base, which leads to a smaller curvature radius of the tip apex and enables, in turn, the etching of pore tips to be preferentially sustained over time and space.