Ionic transport and barrier effect of anodic oxide layer in a solid-state Al2O3 capacitor under high electric field

Study of the in situ test setup and analysis methods for self-healing properties of metallized film capacitors

Metallized film capacitors (MFCs) are widely used in the power electronics industry due to their unique self-healing (SH) capability. SH performance is an essential assessment for MFC reliability verification in industrial production. The SH phenomenon of metallized films usually occurs rapidly in a very short period, and its real-time evolution details are often difficult to capture and analyze. In this paper, a test system for the SH performance of metallized films for capacitors was constructed. The system consists of three components: a voltage-current characteristic testing and current pulse capture device, a microscopic image real-time acquisition device, and an integrated analysis processing device. Through the voltage-current characteristic testing and current pulse capture device, the electrical parameters of the SH point, such as SH times, breakdown field strength, SH current, and SH energy, are obtained; through a microscopic image real-time acquisition device, the real-time spatial positioning of the SH point was obtained, and the interconnection between the morphology of the SH point and the electrical properties was established. The relationship between the SH point and the temperature distribution was further established using thermal imaging technology, which lays the foundation for a thorough and timely assessment and analysis of the failure mechanism and the real-time evolution of the metallized film SH process. This significantly improves the effectiveness of SH property research.

Overview of Engineering Carbon Nanomaterials Such As Carbon Nanotubes (CNTs), Carbon Nanofibers (CNFs), Graphene and Nanodiamonds and Other Carbon Allotropes inside Porous Anodic Alumina (PAA) Templates

The fabrication and design of carbon-based hierarchical structures with tailored nano-architectures have attracted the enormous attention of the materials science community due to their exceptional chemical and physical properties. The collective control of nano-objects, in terms of their dimensionality, orientation and size, is of paramount importance to expand the implementation of carbon nanomaterials across a large variety of applications. In this context, porous anodic alumina (PAA) has become an attractive template where the pore morphologies can be straightforwardly modulated. The synthesis of diverse carbon nanomaterials can be performed using PAA templates, such as carbon nanotubes (CNTs), carbon nanofibers (CNFs), and nanodiamonds, or can act as support for other carbon allotropes such as graphene and other carbon nanoforms. However, the successful growth of carbon nanomaterials within ordered PAA templates typically requires a series of stages involving the template fabrication, nanostructure growth and finally an etching or electrode metallization steps, which all encounter different challenges towards a nanodevice fabrication. The present review article describes the advantages and challenges associated with the fabrication of carbon materials in PAA based materials and aims to give a renewed momentum to this topic within the materials science community by providing an exhaustive overview of the current synthesis approaches and the most relevant applications based on PAA/Carbon nanostructures materials. Finally, the perspective and opportunities in the field are presented.

Three-Dimensional Nb Nanopillar based Electrode for Energy Storage Devices

In this study, aluminum (Al) film with high purity was coated on the Niobium (Nb) sheet by thermal evaporation under ultra-high vacuum. An Anodic Aluminum Oxide (AAO) nanotemplate was prepared on the Nb sheet. During AAO nanotemplate preparation, three-dimensional (3D) Nb nanopillars were grown on the Nb sheet. We performed a simple 3D Artificial Intelligence (AI) analysis of Nb nanopillars. According to the experimental results, the width of the prepared Nb nanopillars is in the range of 100–120 nm, and the length is approximately 150 nm. The Electron Diffraction Spectroscopy (EDS) results confirmed that the nanopillars are Nb. The prepared Nb nanopillars can be a potential candidate for energy storage applications.

Automated real-time study of the defect-induced breakdown occurring on a film-electrode system under a high electric field

The energy storage density of a capacitor depends on its relative permittivity and breakdown strength. Breakdown of a thin film always first occurs at weak defect spots of dielectrics under a high electric field. It is of great significance to study the defect-induced breakdown of dielectrics to improve the breakdown strength of the dielectric. The majority of studies about the defect-induced breakdown only determine a certain voltage inducing the breakdown, and the single-hole breakdown spots influence the defect-induced breakdown and the intrinsic breakdown under a high electric field, which is hard to facilitate the in-depth study of improving the breakdown strength. Herein, the self-healing breakdown techniques are applied to avoid the influence of single-hole breakdown. An automated real-time testing system is used to study the defect-induced breakdown of various complex film-electrode systems, which accomplishes the temporal and spatial localization of breakdown events according to the physical chemistry characteristics of breakdowns and intelligently displays breakdown events, and detailed classification methods of the defect-induced breakdown are discussed concisely and efficiently. This real-time testing system is effective in revealing the defect-induced breakdown of various complex film-electrode systems under a high electric field, paving the way for uncovering the breakdown mechanism and studying how to improve the capacitor's breakdown strength and energy density.

Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors

Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer. The interfacial oxidation between the gate metal and In-Ga-Zn oxide (IGZO) was investigated with Al, Ti, and Mo. Positive bias was applied to the gate metal for enhanced oxygen diffusion since the migration of oxygen is an important factor in interfacial oxidation. Through interfacial oxidation, a top-gate oxide TFT was developed with low source-drain voltages below 0.5 V and a gate voltage swing less than 1 V, which provide low power consumption.

Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors

Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer. The interfacial oxidation between the gate metal and In-Ga-Zn oxide (IGZO) was investigated with Al, Ti, and Mo. Positive bias was applied to the gate metal for enhanced oxygen diffusion since the migration of oxygen is an important factor in interfacial oxidation. Through interfacial oxidation, a top-gate oxide TFT was developed with low source-drain voltages below 0.5 V and a gate voltage swing less than 1 V, which provide low power consumption.