The growth and unique electronic properties of the porous-alumina-assisted hafnium-oxide nanostructured films

The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration

The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO₂ nanorods self-embedded into the nanoporous Al₂O₃ matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95-480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF·cm^-2, the loss tangent of 4·10^-3 at frequencies up to 1 MHz, the leakage current density of 40 pA·cm^-2, the breakdown field strength of up to 10 MV·cm^-1, the energy density of 100 J·cm^-3, the quadratic voltage coefficient of capacitance of 4 ppm·V^-2, and the temperature coefficient of capacitance of 480 ppm·K^-1 at 293-423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors' characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices.

Crystallinity Effect on Electrical Properties of PEALD-HfO2 Thin Films Prepared by Different Substrate Temperatures

Hafnium oxide (HfO₂) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO₂ films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO₂ films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. The substrate temperature dependent electrical properties of PEALD-HfO₂ films were obtained by capacitance-voltage and current-voltage measurements. GIXRD patterns and XRR investigations show that increasing the substrate temperature improved the crystallinity and density of HfO₂ films. The crystallinity of HfO₂ films has a major effect on electrical properties of the films. HfO₂ thin film deposited at 300 °C possesses the highest dielectric constant and breakdown electric field.

Computational study of oxide stoichiometry and variability in the Al/AlOx/Al tunnel junction

Aluminium tunnel junctions are key components of a wide variety of electronic devices. These superconducting tunnel junctions, known as Josephson Junctions (JJ's) are one of the main components of superconducting qubits, a favourite qubit technology in the race for working quantum computers. In this simulation study our JJ configurations are modelled as two aluminium electrodes which are separated by a thin layer of amorphous aluminium oxide. There is limited understanding of how the structure of the amorphous oxide barrier affects the performance and shortcomings of JJ systems. In this paper we present a computational study which combines molecular dynamics, atomistic semi-empirical methods (Density Functional Tight Binding) and non-equilibrium Green's function to study the electronic structure and current flow of these junction devices. Our results suggest that the atomic nature of the amorphous barrier linked to aluminum-oxygen coordination sensitively affects the current-voltage (IV) characteristics, resistance and critical current. Oxide stoichiometry is an important parameter that can lead to variation in resistance and critical currents of several orders of magnitude. The simulations further illustrate the variability that arises due to small differences in atomic structure across amorphous barriers with the same stoichiometry, density and barrier length. Our results also confirm that the charge transport through the barrier is dominated by metallic conduction pathways.

Optical Properties of Porous Alumina Assisted Niobia Nanostructured Films-Designing 2-D Photonic Crystals Based on Hexagonally Arranged Nanocolumns

Three types of niobia nanostructured films (so-called native, planarized, and column-like) were formed on glass substrates by porous alumina assisted anodizing in a 0.2 M aqueous solution of oxalic acid in a potentiostatic mode at a 53 V and then reanodizing in an electrolyte containing 0.5 M boric acid and 0.05 M sodium tetraborate in a potentiodynamic mode by raising the voltage to 230 V, and chemical post-processing. Anodic behaviors, morphology, and optical properties of the films have been investigated. The interference pattern of native film served as the basis for calculating the effective refractive index which varies within 1.75-1.54 in the wavelength range 190-1100 nm. Refractive index spectral characteristics made it possible to distinguish a number of absorbance bands of the native film. Based on the analysis of literature data, the identified oxide absorbance bands were assigned. The effective refractive index of native film was also calculated using the effective-medium models, and was in the range of 1.63-1.68. The reflectance spectra of all films show peaks in short- and long-wave regions. The presence of these peaks is due to the periodically varying refractive index in the layers of films in two dimensions. FDTD simulation was carried out and the morphology of a potential 2-D photonic crystal with 92% (wavelength 462 nm) reflectance, based on the third type of films, was proposed.