Chemically crosslinked polyimide-POSS hybrid: A dielectric material with improved dimensional stability and dielectric properties

The Recent Advances of Polymer-POSS Nanocomposites With Low Dielectric Constant

This study provides a comprehensive overview of the preparation methods for polyhedral oligomeric silsesquioxane (POSS) monomers and polymer/POSS nanocomposites. It focuses on the latest advancements in using POSS to design polymer nanocomposites with reduced dielectric constants. The study emphasizes exploring the potential of POSS, either alone or in combination with other materials, to decrease the dielectric constant and dielectric loss of various polymers, including polyimides, bismaleimide resins, poly(aryl ether)s, polybenzoxazines, benzocyclobutene resins, polyolefins, cyanate ester resins, and epoxy resins. In addition, the research investigates the impact of incorporating POSS on improving the thermal properties, mechanical properties, surface properties, and other aspects of these polymers. The entire study is divided into two parts, discussing systematically the role of POSS in reducing dielectric constants during the preparation of POSS composites using both physical blending and chemical synthesis methods. The goal of this research is to provide valuable strategies for designing a new generation of low dielectric constant materials suitable for large-scale integrated circuits in the semiconductor materials domain.

Polyimide/crown ether composite film with low dielectric constant and low dielectric loss for high signal transmission

Dielectric properties of polyimide (PI) are constrained by its inherent molecular structure and inter-chain packing capacities. The compromised dielectric properties of PI, however, could be rescued by introducing trifluoromethyl and forming a host-guest inclusion complex with the introduction of crown ethers (CEs). Herein, we report PI/crown ether composite films as a communication substrate that could be applied under high frequency circumstances. In this work, three kinds of bisphenol A-containing diamine (2,2'-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(2-methyl-4-aminophenoxy)phenyl]propane, and 2,2-bis[4-(2-trifluoro methyl-4-aminophenoxy)phenyl]propane) are synthesized and polymerized with 4,4'-(hexafluoroisopropylidene)diphthalic anhydride to prepare low-dielectric PI films by means of thermal imidization. Crown ethers are introduced into the PI with different mass fractions to obtain three series of PI films. Following the combination of trifluoromethyl into the molecular chain of PI, high frequency dielectric loss of modified PI films can be effectively reduced. The properties of these materials (especially the dielectric properties) are thoroughly explored by crown ether addition. The results show that the crown ether addition process can offer crown ethers with increased free volume of PI matrix, thus allowing them to generate a special necklace-like supramolecular structure, which makes the crown ether disperse more uniformly in the PI matrix, resulting in improved dielectric properties. Importantly, the dielectric constant and dielectric loss of the composite films at high frequencies are remarkably reduced to 2.33 and 0.00337, respectively. Therefore, these composite films are expected to find extensive use as a 5G communication substrate at high frequencies in the future.