Controlling graphene work function by doping in a MOCVD reactor

Alkaline earth atom doping-induced changes in the electronic and magnetic properties of graphene: a density functional theory study

Density functional theory was used to investigate the effects of doping alkaline earth metal atoms (beryllium, magnesium, calcium and strontium) on graphene. Electron transfer from the dopant atom to the graphene substrate was observed and was further probed by a combined electron localization function/non-covalent interaction (ELF/NCI) approach. This approach demonstrates that predominantly ionic bonding occurs between the alkaline earth dopants and the substrate, with beryllium doping having a variant characteristic as a consequence of electronegativity equalization attributed to its lower atomic number relative to carbon. The ionic bonding induces spin-polarized electronic structures and lower workfunctions for Mg-, Ca-, and Sr-doped graphene systems as compared to the pristine graphene. However, due to its variant bonding characteristic, Be-doped graphene exhibits non-spin-polarized p-type semiconductor behavior, which is consistent with previous works, and an increase in workfunction relative to pristine graphene. Dirac half-metal-like behavior was predicted for magnesium doped graphene while calcium doped and strontium doped graphene were predicted to have bipolar magnetic semiconductor behavior. These changes in the electronic and magnetic properties of alkaline earth doped graphene may be of importance for spintronic and other electronic device applications.

Alkaline earth atom dopants on graphene induce work function tuning and spin polarized electronic properties by ionic bonding.

Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD

The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.