Vacuum-Ultraviolet Photon Detections

Imaging Extreme Ultraviolet Radiation Using Nanodiamonds with Nitrogen-Vacancy Centers

Extreme ultraviolet (EUV) radiation with wavelengths of 10-121 nm has drawn considerable attention recently for its use in photolithography to fabricate nanoelectronic chips. This study demonstrates, for the first time, fluorescent nanodiamonds (FNDs) with nitrogen-vacancy (NV) centers as scintillators to image and characterize EUV radiations. The FNDs employed are ∼100 nm in size; they form a uniform and stable thin film on an indium-tin-oxide-coated slide by electrospray deposition. The film is nonhygroscopic and photostable and can emit bright red fluorescence from NV0 centers when excited by EUV light. An FND-based imaging device has been developed and applied for beam diagnostics of 50 nm and 13.5 nm synchrotron radiations, achieving a spatial resolution of 30 μm using a film of ∼1 μm thickness. The noise equivalent power density is 29 μW/(cm2 Hz1/2) for the 13.5 nm radiation. The method is generally applicable to imaging EUV radiation from different sources.

Two-dimensional InTeClO3: an ultrawide-bandgap material with potential application in a deep ultraviolet photodetector

Ultrawide-bandgap semiconductors, possessing bandgaps distinctly larger than the 3.4 eV of GaN, have emerged as a promising class capable of achieving deep ultraviolet (UV) light detection. Based on first-principles calculations, we propose an unexplored two-dimensional (2D) InTeClO3 layered system with ultrawide bandgaps ranging from 4.34 eV of bulk to 4.54 eV of monolayer. Our calculations demonstrate that 2D InTeClO3 monolayer can be exfoliated from its bulk counterpart and maintain good thermal and dynamic stability at room temperature. The ultrawide bandgaps may be modulated by the small in-plane strains and layer thickness in a certain range. Furthermore, the 2D InTeClO3 monolayer shows promising electron transport behavior and strong optical absorption capacity in the deep UV range. A two-probe InTeClO3-based photodetection device has been constructed for evaluating the photocurrent. Remarkably, the effective photocurrent (5.7 A m-2 at photon energy of 4.2 eV) generation under polarized light has been observed in such a photodetector. Our results indicate that 2D InTeClO3 systems have strong photoresponse capacity in the deep UV region, accompanying the remarkable polarization sensitivity and high extinction ratio. These distinctive characteristics highlight the promising application prospects of InTeClO3 materials in the field of deep UV optoelectronics.

Application of Graphene-Combined Rare-Earth Oxide (Sm2O3) in Solar-Blind Ultraviolet Photodetection

Rare-earth oxide Sm2O3 is theoretically expected to be used in the preparation of ultraviolet (UV) detectors with low dark currents and high radiation resistance due to its characteristics of a wide bandgap, a high dielectric constant, and high chemical stability. However, certain features that rare-earth oxides possess, such as high resistivity and weak photoelectric response currents, have hindered relevant research on these kinds of materials in the field of UV detection. In this work, a p-Gr/i-Sm2O3/n-SiC heterojunction photovoltaic solar-blind UV sensor was constructed for the first time. Because of the high mobility of graphene (Gr) and the contribution of double built-in electric fields in the heterojunction, the collection efficiency of photogenerated carriers has been greatly improved, with the typical shortcomings of high resistivity and poor photoelectric response performance of rare-earth oxides having been overcome. This detector has exhibited outstanding performance at 0 V, including a responsivity of 19.8 mA/W and an open-circuit voltage of 0.68 V. Additionally, this detector has a detectivity as high as 1.2 × 1011 jones, which is at the front position of most ultraviolet detectors. The fabrication of this high-performance Sm2O3-based photovoltaic UV detector has broadened the application fields of rare-earth oxide semiconductors. Therefore, this project has important value for future research in relevant fields.

Opportunities of Electronic and Optical Sensors in Autonomous Medical Plasma Technologies

Low temperature plasma technology is proving to be at the frontier of emerging medical technologies with real potential to overcome escalating healthcare challenges including antimicrobial and anticancer resistance. However, significant improvements in efficacy, safety, and reproducibility of plasma treatments need to be addressed to realize the full clinical potential of the technology. To improve plasma treatments recent research has focused on integrating automated feedback control systems into medical plasma technologies to maintain optimal performance and safety. However, more advanced diagnostic systems are still needed to provide data into feedback control systems with sufficient levels of sensitivity, accuracy, and reproducibility. These diagnostic systems need to be compatible with the biological target and to also not perturb the plasma treatment. This paper reviews the state-of-the-art electronic and optical sensors that might be suitable to address this unmet technological need, and the steps needed to integrate these sensors into autonomous plasma systems. Realizing this technological gap could facilitate the development of next-generation medical plasma technologies with strong potential to yield superior healthcare outcomes.

Research advances in ZnO nanomaterials-based UV photode tectors: a review

Ultraviolet photodetectors (UV PDs) have always been the research focus of semiconductor optoelectronic devices due to their wide application fields and diverse compositions. As one of the best-known n-type metal oxides in third-generation semiconductor electronic devices, ZnO nanostructures and their assembly with other materials have received extensive research. In this paper, the research progress of different types of ZnO UV PDs is reviewed, and the effects of different nanostructures on ZnO UV PDs are summarized in detail. In addition, physical effects such as piezoelectric photoelectric effect, pyroelectric effect, and three ways of heterojunction, noble metal local surface plasmon resonance enhancement and formation of ternary metal oxides on the performance of ZnO UV PDs were also investigated. The applications of these PDs in UV sensing, wearable devices, and optical communication are displayed. Finally, the possible opportunities and challenges for the future development of ZnO UV PDs are prospected.

Enhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga2O3 Microflake/MnO Quantum Dots

Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the UV-C region (<290 nm). In this work, we mitigate the aforementioned issues by demonstrating a facile fabrication process for a high-responsivity solar-blind self-powered UV-C photodetector based on a p-n WBGS heterojunction structure, operating under ambient conditions. Here, heterojunction structures based on p-type and n-type ultra-wide band gap WBGSs (i.e. both are characterized by energy gap ≥4.5 eV) are demonstrated for the first time; mainly p-type solution-processed manganese oxide quantum dots (MnO QDs) and n-type Sn-doped β-Ga₂O₃ microflakes. Highly crystalline p-type MnO QDs are synthesized using cost-effective and facile pulsed femtosecond laser ablation in ethanol (FLAL), while the n-type Ga₂O₃ microflakes are prepared by exfoliation. The solution-processed QDs are uniformly dropcasted on the exfoliated Sn-doped β-Ga₂O₃ microflakes to fabricate a p-n heterojunction photodetector, resulting in excellent solar-blind UV-C photoresponse characteristics (with a cutoff at ∼265 nm) being demonstrated. Further analyses using XPS demonstrate the good band alignment between p-type MnO QDs and n-type β-Ga₂O₃ microflakes with a type-II heterojunction. Superior photoresponsivity (922 A/W) is obtained under bias, while the self-powered responsivity is ∼86.9 mA/W. The fabrication strategy adopted in this study will provide a cost-effective means for the development of flexible and highly efficient UV-C devices suitable for energy-saving large-scale fixable applications.

Narrow-Band Solar-Blind Ultraviolet Detectors Based on AlSnO Films with Tunable Band Gap

Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40-5.43 eV were obtained by varying the growth process, which demonstrates that the band gap of AlSnO is continuously tunable. What is more, based on the films prepared, narrow-band solar-blind ultraviolet detectors were fabricated with good solar-blind ultraviolet spectral selectivity, excellent detectivity, and narrow full widths at half-maximum in the response spectra, showing a great potential to be applied to solar-blind ultraviolet narrow-band detection. Therefore, based on the results above, this study focusing on the fabrication of detectors via band gap engineering can be a significant reference for researchers interested in solar-blind ultraviolet detection.

Ultrasensitive self-powered heterojunction ultraviolet photodetector of p-GaN nanowires on Si by halide chemical vapour deposition

In this study, we report the fabrication of quasi-aligned p-GaN nanowires (NWs) on n-Si (1 1 1) substrate by halide chemical vapour deposition (HCVD) using MgCl₂precursor and followed by low-energy electron beam irradiation to activate the Mg acceptor doping in GaN NWs. We aimed to attain a comprehensive understanding of p-doping in GaN NWs growth, extensive characterizations and fabrication of UV photodetector (PDs) based on p-GaN NWs/n-Si heterojunction. To realize the efficient UV photodetectors, we measure the current-voltage (I-V) characteristics of heterojunction PDs under dark and illuminated conditions and theI-Vcurve demonstrates good rectifying behaviours with 0.2 V turn-on voltage. At zero bias, the heterojunction PDs show a reverse photocurrent of 1.27 × 10^-6A with a very low dark current of 2.35 × 10^-9A under 325 nm UV illumination. Besides, the significance of the self-powered operation of UV PDs and the charge transfer mechanism are discussed with the aid of the energy band diagram. The substantial photocurrent increment with varying applied potential leads to narrowing the photo potential in the interface. The excitonic bound states present in p-GaN NWs/n-Si heterojunction is further elucidated. As a result, the heterojunction PDs demonstrate the high responsivity, detectivity, and external quantum efficiency of 134 mA W^-1, 3.73 × 10¹³Jones, and 51% respectively, at 0.1 V low applied potential under the reverse bias condition. The proposed work provides an archetype for Mg doping in GaN NWs ensembles, which will help to facilitate the heterojunction with n-Si to unleash the potential of self-powered UV PDs.

Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection

The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs) on GaN templates with low defect density has limited its practical applications in vertical devices. Here, a novel preparation strategy of high-quality AlN films was proposed via the metal organic chemical vapor deposition (MOCVD) technique. Cross-sectional transmission electron microscopy (TEM) studies clearly indicate that sharp, crack-free AlN films in single-crystal configurations were achieved. We also constructed a p-graphene/i-AlN/n-GaN photovoltaic FUV PD with excellent spectral selectivity for the FUV/UV-C rejection ratio of >103, a sharp cutoff edge at 206 nm and a high responsivity of 25 mA/W. This work provides an important reference for device design of AlN materials for high-performance FUV PDs.

Anisotropic photoresponse behavior of a LaAlO3 single-crystal-based vacuum-ultraviolet photodetector

Nowadays, vacuum-ultraviolet (VUV) photodetectors (PDs) have attracted extensive attention owing to their potential applications in space exploration, radiation monitoring, and the semiconductor industry. Benefiting from its intrinsic ultra-wide band-gap, chemical robustness, and low-cost features, LaAlO₃ shows great promise in developing next-generation compact, cheap, and easy-to-fabricate VUV PDs. In this work, we report the unique anisotropic photoresponse behavior of LaAlO₃ single crystals for VUV photodetection applications. First of all, with the guidance of density functional theory (DFT) calculations along with the comprehensive material characterization, the anisotropic carrier transport behavior of LaAlO₃ single crystals was confirmed. Thereafter, after exploring the metal-semiconductor-metal (MSM) device configuration along different substrate orientations, including (100), (110), and (111)-LaAlO₃ single crystals, we found that the (110)-LaAlO₃ VUV PD exhibits the best device performance under VUV illumination, with a responsivity of 2.23 mA W^-1, a high detectivity of 3.72 × 10¹¹ Jones, and a photo-to-dark-current ratio of 5.48 × 10³. This work not only provides a feasible avenue to explore the anisotropic optoelectronic behavior of ultra-wide band-gap semiconductors but also expands the application of the low-cost oxide perovskite family in the field of VUV photodetection.

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities

In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal-organic chemical vapor deposition (MOCVD)-grown β-Ga₂O₃ heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) of the order of 10⁵ at zero bias and >10⁵ at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm² of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10^-14 and 1.03 × 10^-16 W/Hz^1/2 and ultrahigh detectivity of 5.51 × 10¹¹ and 3.10 × 10¹⁴ Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV-visible (260:500 nm) rejection ratios of the order of 10³ at zero bias and 10⁵ at 5 V are obtained. These results demonstrate the potential of Ga₂O₃-based DUV PDs for solar-blind detection applications that require high-temperature robustness.

Boron Nitride Nanoribbons Grown by Chemical Vapor Deposition for VUV Applications

The fabrication process of vacuum ultraviolet (VUV) detectors based on traditional semiconductor materials is complex and costly. The new generation of wide-bandgap semiconductor materials greatly reduce the fabrication cost of the entire VUV detector. We use the chemical vapor deposition (CVD) method to grow boron nitride nanoribbons (BNNRs) for VUV detectors. Morphological and compositional characterization of the BNNRs was tested. VUV detector based on BNNRs exhibits strong response to VUV light with wavelengths as short as 185 nm. The photo-dark current ratio (PDCR) of this detector is 272.43, the responsivity is 0.47 nA/W, and the rise time and fall time are 0.3 s and 0.6 s. The response speed is faster than the same type of BN-based VUV detectors. This paper offers more opportunities for high-performance and low-cost VUV detectors made of wide-bandgap semiconductor materials in the future.

High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD

In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga₂O₃/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga₂O₃ (including a, ε, ε/β, and β) grown on p-GaN films on the performance of photodetectors were systematically studied. Moreover, an in situ GaON dielectric layer improved the responsivity of Ga₂O₃/p-GaN photodetectors by 20 times. All Ga₂O₃/p-GaN photodetectors showed self-power capability without bias. An ultralow dark current of 3.08 pA and a I_photo/I_dark ratio of 4.1 × 10³ (1.8 × 10³) under 254 nm (365 nm) light were obtained for the β-Ga₂O₃/p-GaN photodetector at 0 V bias. Furthermore, the β-Ga₂O₃/p-GaN photodetector showed excellent sensitivity with a high responsivity of 3.8 A/W (0.83 A/W), a fast response speed of 66/36 ms (36/73 ms), and a high detectivity of 1.12 × 10¹⁴ Jones (2.44 × 10¹³ Jones) under 254 nm (365 nm) light at 0 V bias. The carrier transport mechanism of the Ga₂O₃/p-GaN self-powered photodetector was also analyzed through the device energy band diagram. This work provides critical information for the design and fabrication of high-performance self-powered Ga₂O₃/p-GaN UV photodetectors, opening the door to a variety of photonic systems and applications without an external power supply.

Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag₂O layer is continuously deposited on a β-Ga₂O₃ epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p-n junction photodetector was constructed through the Ag₂O/β-Ga₂O₃ heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 × 10⁸, responsivity and detectivity of 25.65 mA/W and 6.10 × 10¹¹ Jones, respectively, and comparable rise and decay times of 108 and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag₂O/β-Ga₂O₃ heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply.

Semipolar (112̅2) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response

The high-quality semipolar (112̅2) AlGaN epitaxial films have been obtained on m-plane sapphire by metal-organic chemical vapor deposition. X-ray rocking curve measurements show the full-width at half-maximums of semipolar (112̅2)-oriented AlGaN films are 0.357° and 0.531° along [112̅3̅]_AlGaN and [11̅00]_AlGaN, respectively. The fabricated semipolar AlGaN metal-semiconductor-metal solar-blind ultraviolet (UV) photodetector (PD) exhibits a high responsivity of 1842 A/W. The fast response and reliability of the UV PD are ensured via fast switching with a rise and decay time of 90 ms and 53(720) ms, respectively. The UV PD exhibits a significant reduction in the dark current, that is, from 100 μA to 780 fA at 10 V, using a simple wet chemical etching to modify the surface properties of materials. The photo-to-dark-current ratio value of the etched UV PD reaches 4 orders of magnitude higher than the unetched UV PD under 270 nm illumination. These are attributed to the fact that KOH wet etching assists in eliminating the surface states and reconstructing the surface oxides. This work might provide a new potential for the development of solar-blind UV PDs with high performance.

Development of a pulsed vacuum ultraviolet light source with adjustable intensity

This paper describes the development of a pulsed light source using the discharge from an electrode in a medium of various noble gases. This source can be used to aid in the characterization and testing of new vacuum-ultraviolet sensitive light detection devices. The source includes a novel spark driver circuit, a spark chamber into which different noble gases can be introduced, and an optical attenuation cell capable of being filled with different gases to allow for the attenuation of the pulsed light down to single photon levels. We describe the construction, calibration, and characterization of this device deployed at a dedicated light detection test stand at Oak Ridge National Laboratory.

A Heterostructured Graphene Quantum Dots/β-Ga2O3 Solar-Blind Photodetector with Enhanced Photoresponsivity

The superior optical and electronic characteristics of quasi-two-dimensional β-Ga₂O₃ make it suitable for solar-blind (200-280 nm) photodetectors (PDs). The metal-semiconductor-metal (MSM) PDs commonly suffer from low photoresponsivity, slow response speed, and a narrow detection wavelength range despite their simple fabrication process. Herein, we report a high-performance MSM PD by integrating exfoliated β-Ga₂O₃ flakes with zero-dimensional graphene quantum dots (GQDs), which exhibits the advantages of enhancing the photoresponsivity, shortening the photoresponse time, and stimulating a broad range of photon detection. The hybrid GQDs/β-Ga₂O₃ heterostructure PD is sensitive to deep-ultraviolet (DUV) light (250 nm) with an ultrahigh responsivity (R of ∼2.4 × 10⁵ A/W), a large detectivity (D* of ∼4.3 × 10¹³ Jones), an excellent external quantum efficiency (EQE of ∼1.2 × 10⁸%), and a fast photoresponse (150 ms), which is superior to the bare β-Ga₂O₃ PD. These improvements result from effective charge transfer due to the introduction of GQDs, which enhance the light absorption and the generation of electron-hole pairs. In addition, the hybrid GQDs/β-Ga₂O₃ PD also exhibits better photoelectric performance than the bare β-Ga₂O₃ PD at a 1000 nm wavelength. As a conclusion, the hybrid GQDs/β-Ga₂O₃ DUV photodetector shows potential applications in commercial optoelectronic products and provides an alternative solution for the design and preparation of high-performance photodetectors.

Pt/ZnGa2O4/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

In this work, a strategy of constructing a back-to-back heterojunction is proposed to fabricate Si-based photovoltaic photodetectors with high deep ultraviolet (DUV) spectral selectivity. By combining Pt with a thickness of 4 nm with a ZnGa₂O₄/Si heterojunction, a back-to-back heterojunction is successfully constructed. Based on that, a Pt/ZnGa₂O₄/p-Si DUV photovoltaic detector with a low dark current density (∼9.6 × 10^-5 μA/cm²), a large photo-to-dark current ratio (PDCR, >10⁵), and a fast response speed (decay time <50 ms) is fabricated. At 0 V bias, this device displays a photoresponsivity of about 1.36 mA/W and a high deep ultraviolet-visible (DUV-vis) rejection ratio (R_258 nm/R_420 nm) of ∼1.1 × 10⁵, which are 1-2 orders of magnitude higher than those of most photovoltaic DUV detectors reported currently. Even at a working temperature of 470 K, the detectivity of this device can still reach ∼1.23 × 10¹⁰ Jones. In addition, compared with Au/ZnGa₂O₄/Si devices, the dark current and PDCR of this Pt/ZnGa₂O₄/Si device decrease by 2 orders of magnitude and increase by 1 order of magnitude, respectively. The enhanced performance of this ZnGa₂O₄/Si device can be attributed to the higher Schottky barrier established between Pt with a higher work function and ZnGa₂O₄. This strategy of adopting a back-to-back heterojunction device structure to hinder the visible light photoresponse of Si-based photodetectors and thus to reduce the dark current of a device can provide a reference for preparing photovoltaic DUV detectors with excellent performance.

Investigating Chaperone like Activity of Green Silver Nanoparticles: Possible Implications in Drug Development

Protein aggregation and amyloidogenesis have been associated with several neurodegenerative disorders like Alzheimer’s, Parkinson’s etc. Unfortunately, there are still no proper drugs and no effective treatment available. Due to the unique properties of noble metallic nanoparticles, they have been used in diverse fields of biomedicine like drug designing, drug delivery, tumour targeting, bio-sensing, tissue engineering etc. Small-sized silver nanoparticles have been reported to have anti-biotic, anti-cancer and anti-viral activities apart from their cytotoxic effects. The current study was carried out in a carefully designed in-vitro to observe the anti-amyloidogenic and inhibitory effects of biologically synthesized green silver nanoparticles (B-AgNPs) on human serum albumin (HSA) aggregation taken as a model protein. We have used different biophysical assays like thioflavin T (ThT), 8-Anilino-1-naphthalene-sulphonic acid (ANS), Far-UV CD etc. to analyze protein aggregation and aggregation inhibition in vitro. It has been observed that the synthesized fluorescent B-AgNPs showed inhibitory effects on protein aggregation in a concentration-dependent manner reaching a plateau, after which the effect of aggregation inhibition was significantly declined. We also observed meaningful chaperone-like aggregation-inhibition activities of as-synthesized florescent B-AgNPs in astrocytes.

Localized surface plasmon resonance-enhanced solar-blind Al0.4Ga0.6N MSM photodetectors exhibiting high-temperature robustness

The appealing properties of tunable direct wide bandgap, high-temperature robustness and chemical hardness, make Al_xGa_1-xN a promising candidate for fabricating robust solar-blind photodetectors (PDs). In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al_0.4Ga_0.6N metal-semiconductor-metal PDs that exhibit high-temperature robustness. We demonstrate that the presence of palladium (Pd) NPs leads to a remarkable enhancement by nearly 600, 300, and 462%, respectively, in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al_0.4Ga_0.6N PD at the wavelength of 280 nm. Using the optical power density of only 32μW cm^-2at -10 V, maximum values of ∼3 × 10³, 2.7 AW^-1, and 2.4 × 10¹³Jones are found for the PDCR, responsivity and specific detectivity, respectively. The experimental observations are supported by finite difference time domain simulations, which clearly indicate the presence of LSPR in Pd NPs decorated on the surface of Al_0.4Ga_0.6N. The mechanism behind the enhancement is investigated in detail, and is ascribed to the LSPR induced effects, namely, improved optical absorption, enhanced local electric field and LSPR sensitization effect. Moreover, the PD exhibits a stable operation up to 400 K, thereby exhibiting the high-temperature robustness desirable for commercial applications.

Effect of Substrate and Thickness on the Photoconductivity of Nanoparticle Titanium Dioxide Thin Film Vacuum Ultraviolet Photoconductive Detector

Vacuum ultraviolet radiation (VUV, from 100 nm to 200 nm wavelength) is indispensable in many applications, but its detection is still challenging. We report the development of a VUV photoconductive detector, based on titanium dioxide (TiO₂) nanoparticle thin films. The effect of crystallinity, optical quality, and crystallite size due to film thickness (80 nm, 500 nm, 1000 nm) and type of substrate (silicon Si, quartz SiO₂, soda lime glass SLG) was investigated to explore ways of enhancing the photoconductivity of the detector. The TiO₂ film deposited on SiO₂ substrate with a film thickness of 80 nm exhibited the best photoconductivity, with a photocurrent of 5.35 milli-Amperes and a photosensitivity of 99.99% for a bias voltage of 70 V. The wavelength response of the detector can be adjusted by changing the thickness of the film as the cut-off shifts to a longer wavelength, as the film becomes thicker. The response time of the TiO₂ detector is about 5.8 μs and is comparable to the 5.4 μs response time of a diamond UV sensor. The development of the TiO₂ nanoparticle thin film detector is expected to contribute to the enhancement of the use of VUV radiation in an increasing number of important technological and scientific applications.

Fermi-Surface Modulation of Graphene Synergistically Enhances the Open-Circuit Voltage and Quantum Efficiency of Photovoltaic Solar-Blind Ultraviolet Detectors

Increasing the open-circuit voltage (V_OC) is of a great significance to achieve high photoelectric conversion efficiency in photovoltaic applications. Here, we present a simple NO₂ doping strategy that can significantly modulate the V_OC of graphene-based solar-blind ultraviolet photodetectors from 0.96 to 1.84 V. The intriguing result can be demonstrated by the fact that NO₂ doping lowers the Fermi surface of graphene and thus enhances quasi-Fermi level splitting of the whole device under illumination. The >103% increase of both external quantum efficiency and photoresponsivity compared to before doping is the result of a 0.88 V increase in the V_OC. Our work sheds light on the forming mechanism of V_OC in graphene-based photovoltaic detectors and further suggests alternative pathways to enhance the V_OC of photovoltaic devices with high efficiency.

Temperature-Dependent Phonon Shifts in van der Waals Crystals

In recent years, there has been an explosive increase in the research on van der Waals (vdW) crystals because of their great potential applications in many optoelectronic devices. It is necessary to determine their temperature-dependent lattice vibration characteristics because their thermal and electrical transport are closely related to the anharmonic phonon effect, which will affect the performance of the devices. We review the temperature-dependent Raman spectroscopy of vdW crystals, systematically introduce the thermal behavior of optical phonons, and summarize their shift with temperature. Upon analyzing the theoretical models and summarizing the reported experimental data, it is found that the phonon shifts of vdW crystals have a "quasi-linear" relationship with temperature, which is widely described with first-order temperature (FOT) coefficients obtained through a linear fit. Thus, subsequently, the phonon shifts of monolayer materials, different-thickness crystals, suspended and supported samples, in-plane and out-of-plane modes in the same vdW materials, as well as heterostructures and alloys are discussed through comparative analysis of FOT coefficients.

High-Pressure O2 Annealing Enhances the Crystallinity of Ultrawide-Band-Gap Sesquioxides Combined with Graphene for Vacuum-Ultraviolet Photovoltaic Detection

(Al_xGa_1-x)₂O₃ is emerging as a promising wide-band-gap sesquioxide for vacuum-ultraviolet (VUV, 10-200 nm) photodetectors and high-power field-effect transistors. However, how the key parameters such as the band gap and crystalline phase of the (Al_xGa_1-x)₂O₃-based device vary with stoichiometry has not been explicitly defined, which is due to the unclear underlying mechanism of the Al local coordination environment. In this work, a high-pressure O₂ (20 atm) annealing (HPOA) strategy that can significantly improve the crystallinity of β-(Al_xGa_1-x)₂O₃ and achieve a tunable optical band gap was proposed, facilitating the revelation of the local structure of Al³⁺ varying with Al content and the kinetic mechanism of Al³⁺ diffusion. By combining the as-HPOA-treated single-crystalline β-(Al_0.69Ga_0.31)₂O₃ films with p-type graphene (p-Gr), which serves as a transparent conductor, a VUV photovoltaic detector is fabricated, showing an improved photovoltage (0.80 V) and fast temporal response (2.1 μs). All of these findings provide a rewarding and important strategy for enhancing the band-gap tunability of sesquioxides, as well as the flexibility of zero-power-consumption photodetectors.

Quasiphonon polaritons

Mid-infrared reflection spectra of c- and m-plane bulk AlN show a reststrahlen band related to the formation of phonon polaritons. However, it is worth noting that there are additional hump- and spike-shaped peaks in the spectra, which cannot be explained by the phonon-polaritons model applicable to optically isotropic crystals. Here, considering the existence of quasiphonons in wurtzite crystals, we suppose that the extra peaks result from the generation of quasiphonon polaritons (QPPs) induced by the coupling between photon and quasi-transverse optical phonon. On the basis of this point, a QPPs model applicable to optically anisotropic wurtzite crystals is developed, which successfully explains the reststrahlen band of bulk AlN. Besides, on the ground of our model, a series of reststrahlen band of bulk AlN under various configurations is also predicted and presented.

X-ray radiation excited ultralong (>20,000 seconds) intrinsic phosphorescence in aluminum nitride single-crystal scintillators

Phosphorescence is a fascinating photoelectronic phenomenon usually observed in rare-earth-doped inorganic crystals and organic molecular crystals, owning great potential in optical information storage, color display and biological dosimetry. Here, we present an ultralong intrinsic phosphorescence (>20,000 seconds) in AlN single-crystal scintillator through X-ray excitation. We suggest that the long afterglow emission originates from the intra-band transition related to native nitrogen vacancy. Some excited states formed by absorbing X-ray photons cannot satisfy the parity difference between initial and final states required by transition selection rule, so they cannot return to the ground state directly through radiation transitions but through several phonon-assisted intra-band transitions slowly. During this process, a long-term broad-spectra phosphorescence emission is formed. Investigating the X-ray excited phosphorescence emission in the AlN is of great significance to understanding the mechanism of phosphorescence in inorganic materials, and to realizing the practical applications in high-energy ray dosimetry.