1
|
Roy A, Dhibar S, Karmakar K, Bhattacharjee S, Saha B, Ray SJ. Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application. Sci Rep 2024; 14:13109. [PMID: 38849385 PMCID: PMC11161586 DOI: 10.1038/s41598-024-61870-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 05/10/2024] [Indexed: 06/09/2024] Open
Abstract
A rapid and effective strategy has been devised for the swift development of a Zn(II)-ion-based supramolecular metallohydrogel, termed Zn@PEH, using pentaethylenehexamine as a low molecular weight gelator. This process occurs in an aqueous medium at room temperature and atmospheric pressure. The mechanical strength of the synthesized Zn@PEH metallohydrogel has been assessed through rheological analysis, considering angular frequency and oscillator stress dependencies. Notably, the Zn@PEH metallohydrogel exhibits exceptional self-healing abilities and can bear substantial loads, which have been characterized through thixotropic analysis. Additionally, this metallohydrogel displays injectable properties. The structural arrangement resembling pebbles within the hierarchical network of the supramolecular Zn@PEH metallohydrogel has been explored using FESEM and TEM measurements. EDX elemental mapping has confirmed the primary chemical constituents of the metallohydrogel. The formation mechanism of the metallohydrogel has been analyzed via FT-IR spectroscopy. Furthermore, zinc(II) metallohydrogel (Zn@PEH)-based Schottky diode structure has been fabricated in a lateral metal-semiconductor-metal configuration and it's charge transport behavior has also been studied. Notably, the zinc(II) metallohydrogel-based resistive random access memory (RRAM) device (Zn@PEH) demonstrates bipolar resistive switching behavior at room temperature. This RRAM device showcases remarkable switching endurance over 1000 consecutive cycles and a high ON/OFF ratio of approximately 270. Further, 2 × 2 crossbar array of the RRAM devices were designed to demonstrate OR and NOT logic circuit operations, which can be extended for performing higher order computing operations. These structures hold promise for applications in non-volatile memory design, neuromorphic and in-memory computing, flexible electronics, and optoelectronic devices due to their straightforward fabrication process, robust resistive switching behavior, and overall system stability.
Collapse
Affiliation(s)
- Arpita Roy
- Department of Physics, Indian Institute of Technology Patna, Patna, Bihar, 801103, India
| | - Subhendu Dhibar
- Colloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, Golapbag, Burdwan, West Bengal, 713104, India.
| | - Kripasindhu Karmakar
- Colloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, Golapbag, Burdwan, West Bengal, 713104, India
| | - Subham Bhattacharjee
- Department of Chemistry, Kazi Nazrul University, Asansol, West Bengal, 713303, India
| | - Bidyut Saha
- Colloid Chemistry Laboratory, Department of Chemistry, The University of Burdwan, Golapbag, Burdwan, West Bengal, 713104, India.
| | - Soumya Jyoti Ray
- Department of Physics, Indian Institute of Technology Patna, Patna, Bihar, 801103, India.
| |
Collapse
|
2
|
Kamath R, Sarkar P, Melanthota SK, Biswas R, Mazumder N, De S. Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene-PVA-Composite-Based Aryl Acrylate on ITO-Coated PET. Polymers (Basel) 2024; 16:218. [PMID: 38257018 PMCID: PMC10818758 DOI: 10.3390/polym16020218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 11/10/2023] [Accepted: 11/14/2023] [Indexed: 01/24/2024] Open
Abstract
Resistive switching memories are among the emerging next-generation technologies that are possible candidates for in-memory and neuromorphic computing. In this report, resistive memory-switching behavior in solution-processed trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate on an ITO-coated PET device was studied. A sandwich configuration was selected, with silver (Ag) serving as a top contact and trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate and ITO-PET serving as a bottom contact. The current-voltage (I-V) characteristics showed hysteresis behavior and non-zero crossing owing to voltages sweeping from positive to negative and vice versa. The results showed non-zero crossing in the devices' current-voltage (I-V) characteristics due to the nanobattery effect or resistance, capacitive, and inductive effects. The device also displayed a negative differential resistance (NDR) effect. Non-volatile storage was feasible with non-zero crossing due to the exhibition of resistive switching behavior. The sweeping range was -10 V to +10 V. These devices had two distinct states: 'ON' and 'OFF'. The ON/OFF ratios of the devices were 14 and 100 under stable operating conditions. The open-circuit voltages (Voc) and short-circuit currents (Isc) corresponding to memristor operation were explained. The DC endurance was stable. Ohmic conduction and direct tunneling mechanisms with traps explained the charge transport model governing the resistive switching behavior. This work gives insight into data storage in terms of a new conception of electronic devices based on facile and low-temperature processed material composites for emerging computational devices.
Collapse
Affiliation(s)
- Rachana Kamath
- Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India;
| | - Parantap Sarkar
- Manipal Centre for Natural Sciences, Manipal Academy of Higher Education, Dr. T. M. A. Pai Planetarium Building, Madhav Nagar, Manipal 576104, Karnataka, India;
| | - Sindhoora Kaniyala Melanthota
- Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India; (S.K.M.); (N.M.)
| | - Rajib Biswas
- Department of Physics, Tezpur University, Tezpur 784028, Assam, India;
| | - Nirmal Mazumder
- Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India; (S.K.M.); (N.M.)
| | - Shounak De
- Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India;
| |
Collapse
|
3
|
Zhou G, Li J, Song Q, Wang L, Ren Z, Sun B, Hu X, Wang W, Xu G, Chen X, Cheng L, Zhou F, Duan S. Full hardware implementation of neuromorphic visual system based on multimodal optoelectronic resistive memory arrays for versatile image processing. Nat Commun 2023; 14:8489. [PMID: 38123562 PMCID: PMC10733375 DOI: 10.1038/s41467-023-43944-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Accepted: 11/22/2023] [Indexed: 12/23/2023] Open
Abstract
In-sensor and near-sensor computing are becoming the next-generation computing paradigm for high-density and low-power sensory processing. To fulfil a high-density and efficient neuromorphic visual system with fully hierarchical emulation of the retina and visual cortex, emerging multimodal neuromorphic devices for multi-stage processing and a fully hardware-implemented system with versatile image processing functions are still lacking and highly desirable. Here we demonstrate an emerging multimodal-multifunctional resistive random-access memory (RRAM) device array based on modified silk fibroin protein (MSFP), exhibiting both optoelectronic RRAM (ORRAM) mode featured by unique negative and positive photoconductance memory and electrical RRAM (ERRAM) mode featured by analogue resistive switching. A full hardware implementation of the artificial visual system with versatile image processing functions is realised for the first time, including ORRAM mode array for the in-sensor image pre-processing (contrast enhancement, background denoising, feature extraction) and ERRAM mode array for near-sensor high-level image recognition, which hugely improves the integration density, and simply the circuit design and the fabrication and integration complexity.
Collapse
Affiliation(s)
- Guangdong Zhou
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Jie Li
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Qunliang Song
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Lidan Wang
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Zhijun Ren
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Bai Sun
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Shanxi, 710049, China
| | - Xiaofang Hu
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China
| | - Wenhua Wang
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Gaobo Xu
- Faculty of Materials and Energy, Southwest University, Chongqing, 400715, China
| | - Xiaodie Chen
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Lan Cheng
- State Key Laboratory of Silkworm Genome, College of Sericulture, Textile and Biomass Sciences, Southwest University, Chongqing, 400715, China
| | - Feichi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Shukai Duan
- College of Artificial Intelligence, Chongqing Key Laboratory of Brain-inspired Computing and Intelligent Chips, Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education), Southwest University, Chongqing, 400715, China.
| |
Collapse
|
4
|
Wu Z, Li Z, Lin X, Shan X, Chen G, Yang C, Zhao X, Sun Z, Hu K, Wang F, Ren T, Song Z, Zhang K. Diverse long-term potentiation and depression based on multilevel LiSiO xmemristor for neuromorphic computing. NANOTECHNOLOGY 2023; 34:475201. [PMID: 37586343 DOI: 10.1088/1361-6528/acf0c8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Accepted: 08/15/2023] [Indexed: 08/18/2023]
Abstract
Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation is essential for implementing bioinspired neuromorphic systems. In this work, a memristor based on Pt/LiSiOx/TiN structure is developed to emulate an artificial synapse, which shows non-volatile multilevel resistance state memory behavior. Moreover, the high nonlinearity caused by abrupt changes in the set process is optimized by adjusting the initial resistance. 100 levels of continuously modulated conductance states are achieved and the nonlinearity factors are reduced to 1.31. The significant improvement is attributed to the decrease in the Schottky barrier height and the evolution of the conductive filaments. Finally, due to the improved linearity of the long-term potentiation/long-term depression behaviors in LiSiOxmemristor, a robust recognition rate (∼94.58%) is achieved for pattern recognition with the modified National Institute of Standards and Technology handwriting database. The Pt/LiSiOx/TiN memristor shows significant potential in high-performance multilevel data storage and neuromorphic computing systems.
Collapse
Affiliation(s)
- Zeyu Wu
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Zewen Li
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Xin Lin
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Xin Shan
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Gang Chen
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Chen Yang
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Xuanyu Zhao
- School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Zheng Sun
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Kai Hu
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Fang Wang
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Tianling Ren
- Beijing National Research Center for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Zhitang Song
- Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Kailiang Zhang
- School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| |
Collapse
|
5
|
Cao Z, Sun B, Zhou G, Mao S, Zhu S, Zhang J, Ke C, Zhao Y, Shao J. Memristor-based neural networks: a bridge from device to artificial intelligence. NANOSCALE HORIZONS 2023; 8:716-745. [PMID: 36946082 DOI: 10.1039/d2nh00536k] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Since the beginning of the 21st century, there is no doubt that the importance of artificial intelligence has been highlighted in many fields, among which the memristor-based artificial neural network technology is expected to break through the limitation of von Neumann so as to realize the replication of the human brain by enabling strong parallel computing ability and efficient data processing and become an important way towards the next generation of artificial intelligence. A new type of nanodevice, namely memristor, which is based on the variability of its resistance value, not only has very important applications in nonvolatile information storage, but also presents obsessive progressiveness in highly integrated circuits, making it one of the most promising circuit components in the post-Moore era. In particular, memristors can effectively simulate neural synapses and build neural networks; thus, they can be applied for the preparation of various artificial intelligence systems. This study reviews the research progress of memristors in artificial neural networks in detail and highlights the structural advantages and frontier applications of neural networks based on memristors. Finally, some urgent problems and challenges in current research are summarized and corresponding solutions and future development trends are put forward.
Collapse
Affiliation(s)
- Zelin Cao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
- Shaanxi International Joint Research Center for Applied Technology of Controllable Neutron Source, School of Science, Xijing University, Xi'an 710123, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, China
| | - Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Shouhui Zhu
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jie Zhang
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Chuan Ke
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jinyou Shao
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
| |
Collapse
|
6
|
Li H, Lan W, Wu X, Zhu Z, Wei B. Novel ternary organic resistive switching memory doped with bipolar materials. NANOTECHNOLOGY 2023; 34:115703. [PMID: 36595321 DOI: 10.1088/1361-6528/acac34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Accepted: 12/16/2022] [Indexed: 06/17/2023]
Abstract
Organic resistive switching memory (ORSM) shows great potential for neotype memory devices due to the preponderances of simple architecture, low power consumption, high switching speed and feasibility of large-area fabrication. Herein, solution-processed ternary ORSM devices doped with bipolar materials were achieved with high ON/OFF ratio and outstanding device stability. The resistive switching performance was effectively ameliorated by doping two bipolar materials (DpAn-InAc and DpAn-5BzAc) in different blending concentration into the PVK:OXD-7 donor-accepter system. Compared with the binary system (PVK: 30 wt% OXD-7), the ON/OFF ratios of the ternary devices doped with 6 wt% DpAn-5BzAc were greatly increased from 7.91 × 102to 4.98 × 104, with the operating voltage (∣Vset-Vreset∣) declined from 4.90 V to 2.25 V, respectively. Additionally, the stability of resistance state and uniformity of operating voltage were also significantly optimized for the ternary devices. For comparison, ternary devices doped with DpAn-InAc have been explored, which also achieved improved resistive switching behavior. A detailed analysis of electrical characteristics and the internal charge transfer properties of ORSM was performed to unveil the performance enhancement in ternary devices. Results indicate that the use of bipolar materials favors the efficient operation of OSRMs with proper energy level alignment and effective charge transfer.
Collapse
Affiliation(s)
- Haoyang Li
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
| | - Weixia Lan
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
- Shanghai Research Institute for Intelligent Science and Technology, Tongji University, Shanghai, 200092, People's Republic of China
| | - Xian Wu
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
| | - Zhiqiang Zhu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, People's Republic of China
| | - Bin Wei
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, People's Republic of China
| |
Collapse
|