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Yu C, Cao M, Yan D, Lou S, Xia C, Xuan T, Xie RJ, Li H. Synthesis of Eu 2+/Eu 3+ Co-Doped Gallium oxide nanocrystals as a full colour converter for white light emitting diodes. J Colloid Interface Sci 2018; 530:52-57. [PMID: 29960908 DOI: 10.1016/j.jcis.2018.06.047] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2018] [Revised: 06/15/2018] [Accepted: 06/20/2018] [Indexed: 01/08/2023]
Abstract
Eu2+ and Eu3+ co-doped Ga2O3 nanocrystals (Ga2O3:Eu NCs) were synthesized in an organic phase at a low reaction temperature of 300 °C. The surface of Ga2O3:Eu NCs was passivated by oleylamine (OAm) and acetylacetone (acac). The coexistence of Eu2+ and Eu3+ as well as passivation by acac and OAm enable Ga2O3 to be excited in the broad spectral range of 200-500 nm. The broadened absorption band is attributed to the strong acac → Ln(III) ligand to the metal charge transfer transition at ∼370 nm, Eu(III) f-f allowed 7F0 → 5L6 transition at 395 nm, and 7F0 → 5D2 transition at 465 nm, as well as the efficient electronic transition of Eu(II) 4f → 5d at ∼400 nm. Under near-ultraviolet excitation, white light emission can be achieved by combining orange-red light from f-f electronic transition of Eu(III) with blue-green-yellow light from Ga2O3 oxygen defects levels. Furthermore, the resultant Ga2O3:Eu NCs with optimized quantum yield of 14.5% were coated onto 395 nm near-ultraviolet chips to fabricate a white light emitting diode. It exhibits a luminous efficiency of 34 lm/W, CIE colour coordinate of (0.2964, 0.2831) and high colour rendering index of 80.
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Affiliation(s)
- Caiyan Yu
- Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai 200062, PR China
| | - Mengmeng Cao
- Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai 200062, PR China
| | - Dong Yan
- Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai 200062, PR China
| | - Sunqi Lou
- Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai 200062, PR China
| | - Chao Xia
- Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai 200062, PR China
| | - Tongtong Xuan
- Ministry of Education Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, PR China.
| | - Rong-Jun Xie
- College of Materials, Xiamen University, Xiamen 361005, PR China.
| | - Huili Li
- Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, Shanghai 200062, PR China.
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Unusual concentration quenching of Sm3+ and Eu3+ doped Sr2SnO4 under UV and NUV excitation. J SOLID STATE CHEM 2017. [DOI: 10.1016/j.jssc.2017.06.028] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Chen J, Fu Z, Huang H, Zeng X, Chen Z. Preparation and properties of vinylphenyl-silicone resins and their application in LED packaging. RSC Adv 2016. [DOI: 10.1039/c6ra08295e] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023] Open
Abstract
The results of spectrophotometry and TEM revealed that materials with a higher homogeneity degree of morphological structure could obtain 98.7% of transmittance at a wavelength of 680 nm.
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Affiliation(s)
- Jianjun Chen
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou 510640
- China
- Research & Development Center of Engineering Technology
| | - Zien Fu
- Research & Development Center of Engineering Technology
- Guangzhou Baiyun Chemical Industry Co., Ltd
- Guangzhou 510540
- China
| | - Hengchao Huang
- Research & Development Center of Engineering Technology
- Guangzhou Baiyun Chemical Industry Co., Ltd
- Guangzhou 510540
- China
| | - Xingrong Zeng
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou 510640
- China
| | - Zhonghua Chen
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou 510640
- China
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