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Yang B, Cang J, Li Z, Chen J. Nanocrystals as performance-boosting materials for solar cells. NANOSCALE ADVANCES 2024; 6:1331-1360. [PMID: 38419867 PMCID: PMC10898446 DOI: 10.1039/d3na01063e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 01/31/2024] [Indexed: 03/02/2024]
Abstract
Nanocrystals (NCs) have been widely studied owing to their distinctive properties and promising application in new-generation photoelectric devices. In photovoltaic devices, semiconductor NCs can act as efficient light harvesters for high-performance solar cells. Besides light absorption, NCs have shown great significance as functional layers for charge (hole and electron) transport and interface modification to improve the power conversion efficiency and stability of solar cells. NC-based functional layers can boost hole/electron transport ability, adjust energy level alignment between a light absorbing layer and charge transport layer, broaden the absorption range of an active layer, enhance intrinsic stability, and reduce fabrication cost. In this review, recent advances in NCs as a hole transport layer, electron transport layer, and interfacial layer are discussed. Additionally, NC additives to improve the performance of solar cells are demonstrated. Finally, a summary and future prospects of NC-based functional materials in solar cells are presented, addressing their limitations and suggesting potential solutions.
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Affiliation(s)
- Boping Yang
- College of Science, Guizhou Institute of Technology Guiyang 550003 China
| | - Junjie Cang
- School of Electrical Engineering, Yancheng Institute of Technology Yancheng 224051 China
| | - Zhiling Li
- College of Science, Guizhou Institute of Technology Guiyang 550003 China
| | - Jian Chen
- College of Artificial Intelligence and Electrical Engineering, Guizhou Institute of Technology Guiyang 550003 China
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Yang L, Zhang S, Xu B, Jiang J, Cai B, Lv X, Zou Y, Fan Z, Yang H, Zeng H. I-III-VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes. NANO LETTERS 2023; 23:2443-2453. [PMID: 36964745 DOI: 10.1021/acs.nanolett.2c03138] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I-III-VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I-III-VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I-III-VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.
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Affiliation(s)
- Linxiang Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shuai Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Bo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jiangyuan Jiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Bo Cai
- State Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Xinyi Lv
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yousheng Zou
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong China
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Korea
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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Zhou Y, Yang J, Luo X, Li Y, Qiu Q, Xie T. Selection, Preparation and Application of Quantum Dots in Perovskite Solar Cells. Int J Mol Sci 2022; 23:ijms23169482. [PMID: 36012746 PMCID: PMC9409050 DOI: 10.3390/ijms23169482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 08/13/2022] [Accepted: 08/17/2022] [Indexed: 11/16/2022] Open
Abstract
As the third generation of new thin-film solar cells, perovskite solar cells (PSCs) have attracted much attention for their excellent photovoltaic performance. Today, PSCs have reported the highest photovoltaic conversion efficiency (PCE) of 25.5%, which is an encouraging value, very close to the highest PCE of the most widely used silicon-based solar cells. However, scholars have found that PSCs have problems of being easily decomposed under ultraviolet (UV) light, poor stability, energy level mismatch and severe hysteresis, which greatly limit their industrialization. As unique materials, quantum dots (QDs) have many excellent properties and have been widely used in PSCs to address the issues mentioned above. In this article, we describe the application of various QDs as additives in different layers of PSCs, as luminescent down-shifting materials, and directly as electron transport layers (ETL), light-absorbing layers and hole transport layers (HTL). The addition of QDs optimizes the energy level arrangement within the device, expands the range of light utilization, passivates defects on the surface of the perovskite film and promotes electron and hole transport, resulting in significant improvements in both PCE and stability. We summarize in detail the role of QDs in PSCs, analyze the perspective and associated issues of QDs in PSCs, and finally offer our insights into the future direction of development.
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Affiliation(s)
- Yankai Zhou
- Engineering Research Center for Hydrogen Energy Materials and Devices, College of Rare Earths, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
- Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
| | - Jiayan Yang
- Engineering Research Center for Hydrogen Energy Materials and Devices, College of Rare Earths, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
- Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
| | - Xingrui Luo
- Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
| | - Yingying Li
- Engineering Research Center for Hydrogen Energy Materials and Devices, College of Rare Earths, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
- Faculty of Materials Metallurgy and Chemistry, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
| | - Qingqing Qiu
- Engineering Research Center for Hydrogen Energy Materials and Devices, College of Rare Earths, Jiangxi University of Science and Technology, 86 Hong Qi Road, Ganzhou 341000, China
- Correspondence:
| | - Tengfeng Xie
- College of Chemistry, Jilin University, Changchun 130012, China
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Cao F, Wang M, Li L. Graded energy band engineering for efficient perovskite solar cells. NANO SELECT 2020. [DOI: 10.1002/nano.202000005] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022] Open
Affiliation(s)
- Fengren Cao
- School of Physical Science and TechnologyCenter for Energy Conversion Materials & Physics (CECMP)Jiangsu Key Laboratory of Thin FilmsSoochow University Suzhou 215006 P. R. China
| | - Meng Wang
- School of Physical Science and TechnologyCenter for Energy Conversion Materials & Physics (CECMP)Jiangsu Key Laboratory of Thin FilmsSoochow University Suzhou 215006 P. R. China
| | - Liang Li
- School of Physical Science and TechnologyCenter for Energy Conversion Materials & Physics (CECMP)Jiangsu Key Laboratory of Thin FilmsSoochow University Suzhou 215006 P. R. China
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Liang J, Chen D, Yao X, Zhang K, Qu F, Qin L, Huang Y, Li J. Recent Progress and Development in Inorganic Halide Perovskite Quantum Dots for Photoelectrochemical Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1903398. [PMID: 31583803 DOI: 10.1002/smll.201903398] [Citation(s) in RCA: 48] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2019] [Revised: 08/23/2019] [Indexed: 06/10/2023]
Abstract
Inorganic halide perovskite quantum dots (IHPQDs) have recently emerged as a new class of optoelectronic nanomaterials that can outperform the existing hybrid organometallic halide perovskite (OHP), II-VI and III-V groups semiconductor nanocrystals, mainly due to their relatively high stability, excellent photophysical properties, and promising applications in wide-ranging and diverse fields. In particular, IHPQDs have attracted much recent attention in the field of photoelectrochemistry, with the potential to harness their superb optical and charge transport properties as well as spectacular characteristics of quantum confinement effect for opening up new opportunities in next-generation photoelectrochemical (PEC) systems. Over the past few years, numerous efforts have been made to design and prepare IHPQD-based materials for a wide range of applications in photoelectrochemistry, ranging from photocatalytic degradation, photocatalytic CO2 reduction and PEC sensing, to photovoltaic devices. In this review, the recent advances in the development of IHPQD-based materials are summarized from the standpoint of photoelectrochemistry. The prospects and further developments of IHPQDs in this exciting field are also discussed.
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Affiliation(s)
- Junhui Liang
- College of Materials Science and Engineering, China Jiliang University, Hangzhou, 310018, Zhejiang, China
| | - Da Chen
- College of Materials Science and Engineering, China Jiliang University, Hangzhou, 310018, Zhejiang, China
| | - Xin Yao
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou, 310018, Zhejiang, China
| | - Kaixiang Zhang
- Department of Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Tsinghua University, Beijing, 100084, China
- School of Pharmaceutical Sciences, Zhengzhou University, Zhengzhou, 450001, China
| | - Fengli Qu
- College of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, 273165, Shandong, China
| | - Laishun Qin
- College of Materials Science and Engineering, China Jiliang University, Hangzhou, 310018, Zhejiang, China
| | - Yuexiang Huang
- College of Materials Science and Engineering, China Jiliang University, Hangzhou, 310018, Zhejiang, China
| | - Jinghong Li
- Department of Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology, Tsinghua University, Beijing, 100084, China
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