Effect of electron-phonon interaction and valence band edge shift for carrier-type reversal in layered ZnS/rGO nanocomposites

Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSbp-nheterojunctions: insights fromab-initioDFT + NEGF studies

The III-V group semiconductors are highly promising absorbers for heterojunctions based solar cell devices due to their high conversion efficiency. In this work, we explore the solar cell properties and the role of electron-phonon coupling (EPC) on the solar cell parameters of GaAs/AlSb and GaAs/AlAsp-nheterojunctions using non-equilibrium Green function method (NEGF) in combination ofab-initiodensity functional theory (DFT). In addition, the band offsets at the heterointerfaces, optical absorption and bandgap shifts (BGSs) due to temperature are estimated using DFT + NEGF approach. The interface band gaps in heterostructures are found to be lower than bulk band gaps leading to a shift in optical absorption coefficient towards lower energy side that results in stronger photocurrent. The temperature dependent electronic BGS is significantly influenced by the phonon density and phonon energy via EPC. The phonon influenced BGS is found to change the optical absorption, photocurrent density and open-circuit voltage. In case of GaAs/AlSb junction, the interface phonons are found to have significantly higher energies as compared to the bulk phonons and thereby may have important implications for photovoltaic (PV) properties. Overall, the present study reveals the influence of EPC on the optical absorption and PV properties of GaAs/AlSb and GaAs/AlSbp-nheterojunctions. Furthermore, the study shows that the DFT + NEGF method can be successfully used to obtain the reasonable quantitative estimates of temperature dependent BGSs, optical absorption and PV properties ofp-nheterojunctions.

Some Novel Results Involving Prototypical Computation of Zagreb Polynomials and Indices for SiO4 Embedded in a Chain of Silicates

A topological index as a graph parameter was obtained mathematically from the graph's topological structure. These indices are useful for measuring the various chemical characteristics of chemical compounds in the chemical graph theory. The number of atoms that surround an atom in the molecular structure of a chemical compound determines its valency. A significant number of valency-based molecular invariants have been proposed, which connect various physicochemical aspects of chemical compounds, such as vapour pressure, stability, elastic energy, and numerous others. Molecules are linked with numerical values in a molecular network, and topological indices are a term for these values. In theoretical chemistry, topological indices are frequently used to simulate the physicochemical characteristics of chemical molecules. Zagreb indices are commonly employed by mathematicians to determine the strain energy, melting point, boiling temperature, distortion, and stability of a chemical compound. The purpose of this study is to look at valency-based molecular invariants for SiO4 embedded in a silicate chain under various conditions. To obtain the outcomes, the approach of atom-bond partitioning according to atom valences was applied by using the application of spectral graph theory, and we obtained different tables of atom-bond partitions of SiO4. We obtained exact values of valency-based molecular invariants, notably the first Zagreb, the second Zagreb, the hyper-Zagreb, the modified Zagreb, the enhanced Zagreb, and the redefined Zagreb (first, second, and third). We also provide a graphical depiction of the results that explains the reliance of topological indices on the specified polynomial structure parameters.

Synthesis and Third-Order Nonlinear Synergistic Effect of ZrO2/RGO Composites

Tuning the third-order nonlinear properties of graphene by hybrid method is of great significance in nonlinear optics research. ZrO2/reduced graphene oxide (RGO) composites with different ZrO2 concentrations were prepared by a simple hydrothermal method. The morphology and structure show that ZrO2 nanoparticles were uniformly dispersed on the surface of graphene nanosheets. The nonlinear optical (NLO) characteristics of composites with different ZrO2 concentrations were studied by the Z-scan technique of 532 nm picosecond pulsed laser. The results showed that ZrO2/RGO composites had saturated absorption and positive nonlinear refraction characteristics. Meanwhile, the third-order nonlinear susceptibility of the ZrO2/RGO composite with a 4:1 mass ratio of ZrO2 to graphene oxide could reach 23.23 × 10-12 esu, which increased tenfold compared to RGO, and the nonlinear modulation depth reached 11.22%. Therefore, the NLO characteristics could be effectively adjusted by controlling the concentration of ZrO2, which lays a foundation for further research on the application of ZrO2/RGO composites in NLO devices.