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Zhao X, Du L, Xing X, Li Z, Tian Y, Chen X, Lang X, Liu H, Yang D. Decorating Pd-Au Nanodots Around Porous In 2O 3 Nanocubes for Tolerant H 2 Sensing Against Switching Response and H 2S Poisoning. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311840. [PMID: 38470189 DOI: 10.1002/smll.202311840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 02/26/2024] [Indexed: 03/13/2024]
Abstract
With the recently-booming hydrogen (H2) economy by green H2 as the energy carriers and the newly-emerged exhaled diagnosis by human organ-metabolized H2 as a biomarker, H2 sensing is simultaneously required with fast response, low detection limit, and tolerant stability against humidity, switching, and poisoning. Here, reliable H2 sensing has been developed by utilizing indium oxide nanocubes decorated with palladium and gold nanodots (Pd-Au NDs/In2O3 NCBs), which have been synthesized by combined hydrothermal reaction, annealing, and chemical bath deposition. As-prepared Pd-Au NDs/In2O3 NCBs are observed with surface-enriched NDs and nanopores. Beneficially, Pd-Au NDs/In2O3 NCBs show 300 ppb-low detection limit, 5 s-fast response to 500 ppm H2, 75%RH-high humidity tolerance, and 56 days-long stability at 280 °C. Further, Pd-Au NDs/In2O3 NCBs show excellent stability against switching sensing response, and are tolerant to H2S poisoning even being exposed to 10 ppm H2S at 280 °C. Such excellent H2 sensing may be attributed to the synergistic effect of the boosted Pd-Au NDs' spillover effect and interfacial electron transfer, increased adsorption sites over the porous NCBs' surface, and utilized Pd NDs' affinity with H2 and H2S. Practically, Pd-Au NDs/In2O3 NCBs are integrated into the H2 sensing device, which can reliably communicate with a smartphone.
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Affiliation(s)
- Xinhua Zhao
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Lingling Du
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Xiaxia Xing
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Zhenxu Li
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Yingying Tian
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Xiaoyu Chen
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Xiaoyan Lang
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Huigang Liu
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Dachi Yang
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
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Bai J, Deng Y, Lian Y, Zhou Q, Zhang C, Su Y. WCx-Supported RuNi Single Atoms for Electrocatalytic Oxygen Evolution. Molecules 2023; 28:7040. [PMID: 37894519 PMCID: PMC10609438 DOI: 10.3390/molecules28207040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 09/16/2023] [Accepted: 10/10/2023] [Indexed: 10/29/2023] Open
Abstract
Single-atom catalysts anchored to oxide or carbonaceous substances are typically tightly coordinated by oxygen or heteroatoms, which certainly impact their electronic structure and coordination environment, thereby affecting their catalytic activity. In this study, we prepared a stable oxygen evolution reaction (OER) catalyst on tungsten carbide using a simple pyrolysis method. The unique structure of tungsten carbide allows the atomic RuNi catalytic site to weakly bond to the surface W and C atoms. XRD patterns and HRTEM images of the WCx-RuNi showed the characteristics of phase-pure WC and W2C, and the absence of nanoparticles. Combined with XPS, the atomic dispersion of Ru/Ni in the catalyst was confirmed. The catalyst exhibits excellent catalytic ability, with a low overpotential of 330 mV at 50 mA/cm2 in 1 m KOH solutions, and demonstrates high long-term stability. This high OER activity is ascribed to the synergistic action of metal Ru/Ni atoms with double monomers. The addition of Ni increases the state density of WCx-RuNi near the Fermi level, promoting the adsorption of oxygen-containing intermediates and enhancing electron exchange. The larger proximity of the d band center to the Fermi level suggests a strong interaction between the d electrons and the valence or conduction band, facilitating charge transfer. Our research offers a promising avenue for reasonable utilization of inexpensive and durable WCx carrier-supported metal single-atom catalysts for electrochemical catalysis.
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Affiliation(s)
- Jirong Bai
- Research Center of Secondary Resources and Environment, School of Chemical Engineering and Materials, Changzhou Institute of Technology, Changzhou 213022, China; (J.B.); (Y.D.); (Y.L.); (Q.Z.)
| | - Yaoyao Deng
- Research Center of Secondary Resources and Environment, School of Chemical Engineering and Materials, Changzhou Institute of Technology, Changzhou 213022, China; (J.B.); (Y.D.); (Y.L.); (Q.Z.)
| | - Yuebin Lian
- Research Center of Secondary Resources and Environment, School of Chemical Engineering and Materials, Changzhou Institute of Technology, Changzhou 213022, China; (J.B.); (Y.D.); (Y.L.); (Q.Z.)
| | - Quanfa Zhou
- Research Center of Secondary Resources and Environment, School of Chemical Engineering and Materials, Changzhou Institute of Technology, Changzhou 213022, China; (J.B.); (Y.D.); (Y.L.); (Q.Z.)
- School of Chemistry and Environmental Engineering, Jiangsu University of Technology, Changzhou 213001, China
| | - Chunyong Zhang
- School of Chemistry and Environmental Engineering, Jiangsu University of Technology, Changzhou 213001, China
| | - Yaqiong Su
- School of Chemistry, Xi’an Key Laboratory of Sustainable Energy Materials Chemistry, State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
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