Hydrogen transport through thin titanium oxides

Low-Pressure Deuterium Storage on Palladium-Coated Titanium Nanofilms: A Versatile Model System for Tritium-Based Betavoltaic Battery Applications

Deuterium (D2(g)) storage of Pd-coated Ti ultra-thin films at relatively low pressures is fine-tuned by systematically controlling the thicknesses of the catalytic Pd overlayer, underlying Ti ultra-thin film domain, D2(g) pressure (PD2), duration of D2(g) exposure, and the thin film temperature. Structural properties of the Ti/Pd nanofilms are investigated via XRD, XPS, AFM, SEM, and TPD to explore new structure-functionality relationships. Ti/Pd thin film systems are deuterated to obtain a D/Ti ratio of up to 1.53 forming crystallographically ordered titanium deuteride (TiDx) phases with strong Tix+-Dy- electronic interactions and high thermal stability, where >90% of the stored D resides in the Ti component, thermally desorbing at >460 °C in the form of D2(g). Electronic interaction between Pd and D is weak, yielding metallic (Pd0) states where D storage occurs mostly on the Pd film surface (i.e., without forming ordered bulk PdDx phases) leading to the thermal desorption of primarily DOH(g) and D2O(g) at <265 °C. D-storage typically increases with increasing Ti film thickness, PD2, T, and t, whereas D-storage is found to be sensitive to the thickness and the surface roughness of the catalytic Pd overlayer. Optimum Pd film thickness is determined to be 10 nm providing sufficient surface coverage for adequate wetting of the underlying Ti film while offering an appropriate number of surface defects (roughness) for D immobilization and a relatively short transport pathlength for efficient D diffusion from Pd to Ti. The currently used D-storage optimization strategy is also extended to a realistic tritium-based betavoltaic battery (BVB) device producing promising β-particle emission yields of 164 mCi/cm2, an open circuit potential (VOC) of 2.04 V, and a short circuit current (ISC) of 7.2 nA.

Anodizing of Hydrogenated Titanium and Zirconium Films

Magnetron-sputtered thin films of titanium and zirconium, with a thickness of 150 nm, were hydrogenated at atmospheric pressure and a temperature of 703 K, then anodized in boric, oxalic, and tartaric acid aqueous solutions, in potentiostatic, galvanostatic, potentiodynamic, and combined modes. A study of the thickness distribution of the elements in fully anodized hydrogenated zirconium samples, using Auger electron spectroscopy, indicates the formation of zirconia. The voltage- and current-time responses of hydrogenated titanium anodizing were investigated. In this work, fundamental possibility and some process features of anodizing hydrogenated metals were demonstrated. In the case of potentiodynamic anodizing at 0.6 M tartaric acid, the increase in titanium hydrogenation time, from 30 to 90 min, leads to a decrease in the charge of the oxidizing hydrogenated metal at an anodic voltage sweep rate of 0.2 V·s^-1. An anodic voltage sweep rate in the range of 0.05-0.5 V·s^-1, with a hydrogenation time of 60 min, increases the anodizing efficiency (charge reduction for the complete oxidation of the hydrogenated metal). The detected radical differences in the time responses and decreased efficiency of the anodic process during the anodizing of the hydrogenated thin films, compared to pure metals, are explained by the presence of hydrogen in the composition of the samples and the increased contribution of side processes, due to the possible features of the formed oxide morphologies.

Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

The characteristics of copper (Cu) isotropic dry etching using a hydrogen-based plasma generated at 13.3 kPa (100 Torr) were improved dramatically by simply introducing a moderate amount of N₂ gas into the process atmosphere. A maximum Cu etch rate of 2.4 μm/min was obtained by nitrogen addition at a H₂ mixture ratio (C _H2 ) of 0.9 and an input power of 70 W. The etch rate for the optimally N₂-added plasma was 8 times higher than that for the pure H₂ plasma. The Cu etch rate increased with increasing input power. The maximum etch rate reached 3.1 μm/min at an input power of 100 W and a C _H2 of 0.9. The surface roughness of the etched copper decreased as a result of optimum N₂ addition. Furthermore, N₂ addition also improved the etch selectivity between Cu and SiO₂ such that the selectivity ratio reached 190. Finally, selective etching of a trench-patterned Si wafer with an electroplated Cu layer was demonstrated.

Effect of cathodic polarization on coating doxycycline on titanium surfaces

Cathodic polarization has been reported to enhance the ability of titanium based implant materials to interact with biomolecules by forming titanium hydride at the outermost surface layer. Although this hydride layer has recently been suggested to allow the immobilization of the broad spectrum antibiotic doxycycline on titanium surfaces, the involvement of hydride in binding the biomolecule onto titanium remains poorly understood. To gain better understanding of the influence this immobilization process has on titanium surfaces, mirror-polished commercially pure titanium surfaces were cathodically polarized in the presence of doxycycline and the modified surfaces were thoroughly characterized using atomic force microscopy, electron microscopy, secondary ion mass spectrometry, and angle-resolved X-ray spectroscopy. We demonstrated that no hydride was created during the polarization process. Doxycycline was found to be attached to an oxide layer that was modified during the electrochemical process. A bacterial assay using bioluminescent Staphylococcus epidermidis Xen43 showed the ability of the coating to reduce bacterial colonization and planktonic bacterial growth.

Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen

We present a study of InAs/InSb heterostructured nanowires by X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and in-vacuum electrical measurements. Starting with pristine nanowires covered only by the native oxide formed through exposure to ambient air, we investigate the effect of atomic hydrogen cleaning on the surface chemistry and electrical performance. We find that clean and unreconstructed nanowire surfaces can be obtained simultaneously for both InSb and InAs by heating to 380 ± 20 °C under an H2 pressure 2 × 10(-6) mbar. Through electrical measurement of individual nanowires, we observe an increase in conductivity of 2 orders of magnitude by atomic hydrogen cleaning, which we relate through theoretical simulation to the contact-nanowire junction and nanowire surface Fermi level pinning. Our study demonstrates the significant potential of atomic hydrogen cleaning regarding device fabrication when high quality contacts or complete control of the surface structure is required. As hydrogen cleaning has recently been shown to work for many different types of III-V nanowires, our findings should be applicable far beyond the present materials system.