A new perovskite-related ceramic with colossal permittivity and low dielectric loss

Optical and dielectric properties of divalent copper based double perovskite compound, Gd2CuTiO6

In this work, we have investigated high temperature dielectric properties and room temperature optical properties on rare earth ion based orthorhombic Gd2CuTiO6(GCTO). Optical properties like reflectance and band gap were determined from ultra-violet visible (UV-Vis) diffuse reflectance spectroscopy technique and photoluminescence (PL) spectrum. The compound exhibited substantial optical absorption and emission in the visible region. Our findings reveal the presence of an intermediate band, as evidenced by the difference between the band gap values obtained from the Tauc plot using the diffuse reflectance spectrum (3.07 eV) and the PL spectrum (2.4 eV). Furthermore, thermogravimetric analysis demonstrated high thermal stability with <0.4% change in mass over a wide temperature range of 30 °C-1200 °C in air environment. Moreover, lead-halide free compound, GCTO is highly thermally stable oxide double perovskite with wide band gap and absorption in the UV-Vis range are highly suitable for optical applications In addition, dielectric properties of the compound have been examined using impedance spectroscopy as a function of frequency ranging from 500 Hz to 1 MHz and temperature between 300 K and 550 K. Compounds with relaxor behaviour at high temperatures and high thermal stability are desired for several applications. Because of the cation disorders present in this compound, GCTO displays dielectric relaxor behaviour indicative of a distribution of relaxation times. Furthermore, the frequency-dependent modulus illustrated a thermally activated conduction mechanism. Cole-Cole plots of electrical modulus suggest prominent grain contribution above 350 K.

Giant dielectric response and relaxation behavior of Bi3+/W6+ co-doped TiO2 ceramics

With the rapid development of electronic information technology, dielectric ceramics are widely used in the field of passive devices such as multi-layer ceramic capacitors. In this paper, (Bi2/3W1/3)xTi1-xO2 (BWTOx) ceramics with superior dielectric properties have been prepared by using a traditional solid-state method. Remarkably, at a (Bi2/3W1/3)4+ doping level of 0.01, a (Bi2/3W1/3)0.01Ti0.99O2 ceramic achieved a giant dielectric permittivity of ∼1.5 × 104 and a low loss tangent of ∼0.07 at 1 kHz, as well as a good temperature independence, which could satisfy the operating temperature standards for X9R capacitors. The abnormal dielectric relaxation in the low temperature region can be explained by the interface polarization. Data based on the complex impedance spectroscopy and X-ray photoemission spectroscopy results indicate that the colossal permittivity of BWTOx ceramics is mainly ascribed to the internal barrier layer capacitance effect. The findings of this work could provide valuable insights for achieving large dielectric constants and good temperature stability simultaneously in BWTOx and other related electronic ceramic materials.

Giant dielectric response, nonlinear characteristics, and humidity sensing properties of a novel perovskite: Na1/3Sr1/3Tb1/3Cu3Ti4O12

In this study, we unveil a novel perovskite compound, Na1/3Sr1/3Tb1/3Cu3Ti4O12, synthesized through a solid-state reaction method, exhibiting remarkable giant dielectric response, nonlinear characteristics, and humidity sensing capabilities. This research highlights the emergence of a Cu-rich phase, the properties of which undergo significant alterations depending on the sintering conditions. The optimization of sintering parameters, encompassing a temperature range of 1040-1450 °C for 1-8 h, resulted in substantial dielectric permittivity (ε') values (∼2800-6000). The temperature dependence of ε' demonstrated relationship to the particular sintering conditions utilized. The acquired loss tangent values were situated within encouraging values, ranging from 0.06 to 0.16 at 1 kHz. Furthermore, the material revealed distinct nonlinear electrical characteristics at 25 °C, with the nonlinear coefficient values of 5-127, depending on ceramic microstructures. Additionally, we delved deeply into the humidity-sensing properties of the Na1/3Sr1/3Tb1/3Cu3Ti4O12 material, showing a considerable variation in ε' in response to fluctuations in relative humidity, thereby indicating its prospective application in humidity sensing technologies. The hysteresis error and response/recovery times were calculated, highlighting the versatility of this compound and its promising potential across multiple applications. The Na1/3Sr1/3Tb1/3Cu3Ti4O12 not only shows remarkable giant dielectric responses but also portrays significant promise for nonlinear and humidity sensing applications, marking it as a significant participant in the advancement of perovskite-based functional materials.

Sol-gel synthesis, structure, and dielectric properties of La0.67LixTi1-xAlxO3 solid solutions

La_0.67Li_xTi_1-xAl_xO₃ were synthesized using the sol-gel Pechini route. Ceramic samples were sintered in the temperature range of 1240-1300 °C in the air atmosphere. It was found that in the concentration range of 0.05 ≤ x < 0.15 there is a morphotropic phase boundary region with rhombohedral and tetragonal syngonies. In the concentration range of 0.15 ≤ x ≤ 0.3, a single-phase solid solution with rhombohedral R 3 ‾ c syngony is formed. As the value of x increases, the average grain size of La_0.67Li_xTi_1-xAl_xO₃ ceramics increases from 5.23 μm (x = 0.05) to 8.76 μm (x = 0.3). All materials of the La_0.67Li_xTi_1-xAl_xO₃ system at 0.05 ≤ x ≤ 0.3 have colossal values of dielectric constant ε' > 10⁴ at frequencies up to 1 kHz. La_0.67Li_xTi_1-xAl_xO₃ (x = 0.2) solid solution with rhombohedral syngony has the highest value of dielectric constant and the lowest value of the dielectric losses.

Significantly Improved Colossal Dielectric Properties and Maxwell-Wagner Relaxation of TiO2-Rich Na1/2Y1/2Cu3Ti4+xO12 Ceramics

In this work, the colossal dielectric properties and Maxwell-Wagner relaxation of TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 (x = 0-0.2) ceramics prepared by a solid-state reaction method are investigated. A single phase of Na1/2Y1/2Cu3Ti4O12 is achieved without the detection of any impurity phase. The highly dense microstructure is obtained, and the mean grain size is significantly reduced by a factor of 10 by increasing Ti molar ratio, resulting in an increased grain boundary density and hence grain boundary resistance (Rgb). The colossal permittivities of ε' ~ 0.7-1.4 × 104 with slightly dependent on frequency in the frequency range of 102-106 Hz are obtained in the TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 ceramics, while the dielectric loss tangent is reduced to tanδ ~ 0.016-0.020 at 1 kHz due to the increased Rgb. The semiconducting grain resistance (Rg) of the Na1/2Y1/2Cu3Ti4+xO12 ceramics increases with increasing x, corresponding to the decrease in Cu+/Cu2+ ratio. The nonlinear electrical properties of the TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 ceramics can also be improved. The colossal dielectric and nonlinear electrical properties of the TiO2-rich Na1/2Y1/2Cu3Ti4+xO12 ceramics are explained by the Maxwell-Wagner relaxation model based on the formation of the Schottky barrier at the grain boundary.

The Primary Origin of Excellent Dielectric Properties of (Co, Nb) Co-Doped TiO2 Ceramics: Electron-Pinned Defect Dipoles vs. Internal Barrier Layer Capacitor Effect

(Co, Nb) co-doped rutile TiO₂ (CoNTO) nanoparticles with low dopant concentrations were prepared using a wet chemistry method. A pure rutile TiO₂ phase with a dense microstructure and homogeneous dispersion of the dopants was obtained. By co-doping rutile TiO₂ with 0.5 at.% (Co, Nb), a very high dielectric permittivity of ε′ ≈ 36,105 and a low loss tangent of tanδ ≈ 0.04 were achieved. The sample–electrode contact and resistive outer-surface layer (surface barrier layer capacitor) have a significant impact on the dielectric response in the CoNTO ceramics. The density functional theory calculation shows that the 2Co atoms are located near the oxygen vacancy, creating a triangle-shaped 2CoV_oTi complex defect. On the other hand, the substitution of TiO₂ with Nb atoms can form a diamond-shaped 2Nb2Ti complex defect. These two types of complex defects are far away from each other. Therefore, the electron-pinned defect dipoles cannot be considered the primary origins of the dielectric response in the CoNTO ceramics. Impedance spectroscopy shows that the CoNTO ceramics are electrically heterogeneous, comprised of insulating and semiconducting regions. Thus, the dielectric properties of the CoNTO ceramics are attributed to the interfacial polarization at the internal insulating layers with very high resistivity, giving rise to a low loss tangent.

Colossal dielectric permittivity, reduced loss tangent and the microstructure of Ca1-x Cd x Cu3Ti4O12-2y F2y ceramics

Ca_1−xCd_xCu₃Ti₄O_12−2yF_2y (x = y = 0, 0.10, and 0.15) ceramics were successfully prepared via a conventional solid-state reaction (SSR) method. A single-phase CaCu₃Ti₄O₁₂ with a unit cell ∼7.393 Å was detected in all of the studied ceramic samples. The grain sizes of sintered Ca_1−xCd_xCu₃Ti₄O_12−2yF_2y ceramics were significantly enlarged with increasing dopant levels. Liquid-phase sintering mechanisms could be well matched to explain the enlarged grain size in the doped ceramics. Interestingly, preserved high dielectric permittivities, ∼36 279–38 947, and significantly reduced loss tangents, ∼0.024–0.033, were achieved in CdF₂ codoped CCTO ceramics. Density functional theory results disclosed that the Cu site is the most preferable location for the Cd dopant. Moreover, F atoms preferentially remained close to the Cd atoms in this structure. An enhanced grain boundary response might be a primary cause of the improved dielectric properties in Ca_1−xCd_xCu₃Ti₄O_12−2yF_2y ceramics. The internal barrier layer capacitor model could well describe the colossal dielectric response of all studied sintered ceramics.

CdF₂ defect clusters result in enhancement of dielectric properties of the Ca_1−xCd_xCu₃Ti₄O_12−2yF_2y ceramics.

Influences of Sr2+ Doping on Microstructure, Giant Dielectric Behavior, and Non-Ohmic Properties of CaCu3Ti4O12/CaTiO3 Ceramic Composites

The microstructure, dielectric response, and nonlinear current-voltage properties of Sr²⁺-doped CaCu₃Ti₄O₁₂/CaTiO₃ (CCTO/CTO) ceramic composites, which were prepared by a solid-state reaction method using a single step from the starting nominal composition of CCTO/CTO/xSrO, were investigated. The CCTO and CTO phases were detected in the X-ray diffraction patterns. The lattice parameter increased with increasing Sr²⁺ doping concentration. The phase compositions of CCTO and CTO were confirmed by energy-dispersive X-ray spectroscopy with elemental mapping in the sintered ceramics. It can be confirmed that most of the Sr²⁺ ions substituted into the CTO phase, while some minor portion substituted into the CCTO phase. Furthermore, small segregation of Cu-rich was observed along the grain boundaries. The dielectric permittivity of the CCTO/CTO composite slightly decreased by doping with Sr²⁺, while the loss tangent was greatly reduced. Furthermore, the dielectric properties in a high-temperature range of the Sr²⁺-doped CCTO/CTO ceramic composites can be improved. Interestingly, the nonlinear electrical properties of the Sr²⁺-doped CCTO/CTO ceramic composites were significantly enhanced. The improved dielectric and nonlinear electrical properties of the Sr²⁺-doped CCTO/CTO ceramic composites were explained by the enhancement of the electrical properties of the internal interfaces.