The electronic structures of all trans form of permethyl-oligosilane radical cation with longer chain: A density functional theory study

Large entropic effects on the thermochemistry of silicon nanodusty plasma constituents

Determination of the thermodynamic properties of reactor constituents is the first step in designing control strategies for plasma-mediated deposition processes and is also a key fundamental issue in physical chemistry. In this work, a recently proposed multistructural statistical thermodynamic method is used to show the importance of multiple structures and torsional anharmonicity in determining the thermodynamic properties of silicon hydride clusters, which are important both in plasmas and in thermally driven systems. It includes five different categories of silicon hydride clusters and radicals, including silanes, silyl radicals, and silenes. We employed a statistical mechanical approach, namely the recently developed multistructural (MS) anharmonicity method, in combination with density functional theory to calculate the partition functions, which in turn are used to estimate thermodynamic quantities, namely Gibbs free energy, enthalpy, entropy, and heat capacity, for all of the systems considered. The calculations are performed using all of the conformational structures of each molecule or radical by employing the multistructural quasiharmonic approximation (MS-QH) and also by including torsional potential anharmonicity (MS-T). For those cases where group additivity (GA) results are available, the thermodynamic quantities obtained from our MS-T calculations differ considerably due to the fact that the GA method is based on single-structure data for isomers of each stoichiometry, and hence lack multistructural effects; whereas we find that multistructural effects are very important in silicon hydride systems. Our results also indicate that the entropic effect on the thermochemistry is huge and is dominated by multistructural effects. The entropic effect of multiple structures is also expected to be important for other kinds of chain molecules, and its effect on nucleation kinetics is expected to be large.

Electronic structures of one-dimensional poly-fused selenophene radical cations: density functional theory study

Hybrid density functional theory (DFT) calculations have been carried out for neutral and radical cation species of a fused selenophene oligomer, denoted by Se(n), where n represents the number of selenophene rings in the oligomer, to elucidate the electronic structures at ground and low-lying excited states. A polymer of fused selenophene was also investigated using one-dimensional periodic boundary conditions (PBC) for comparison. It was found that the reorganization energy of a radical cation of Se(n) from a vertical hole trapping point to its relaxed structure is significantly small. Also, the reorganization energy decreased gradually with increasing n, indicating that Se(n) has an effective intramolecular hole transport property. It was found that the radical cation species of Se(n) has a low-energy band in the near-IR region, which is strongly correlated to hole conductivity. The relationship between the electronic states and intramolecular hole conductivity was discussed on the basis of theoretical calculations.

Mechanism of Electron and Hole Localization in Poly(dimethylsilane) Radical Ions

The mechanism of excess electron and hole localizations in radical ions of poly(dimethylsilane) (PDMS) has been investigated by means of molecular dynamics (MD) and extended Hückel methods. Oligo(dimethylsilane) composed of 100 monomer units of dimethylsilane, CH3(Si(CH3)2)(n)CH3 (n = 100), were used as a model of PDMS. Both wings of the oligomer were capped by a methyl group. First, the geometry of PDMS with a regular all-trans form was fully optimized by MM2+ energy gradient method. Next, the MD calculation was carried out for PDMS at 300 K. The structure of PDMS was gradually deformed as a function of simulation time, especially the dihedral angle of Si-Si-Si-Si backbone that was randomized. At time zero when the structure has the regular all-trans form, both the excess electron and hole were completely delocalized on the Si backbone of PDMS. After thermal activation, the localization of the electron and hole was found. The mechanism of the localization was discussed on the basis of theoretical results.