Growth and property enhancement of Er 3+ -doped 0.68Pb(Mg 1/3 Nb 2/3 )O 3 -0.32PbTiO 3 single crystal

Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3

A relaxor-based ferroelectric single crystal with the nominal composition of xPb(Sm0.5Nb0.5)O3-(0.7‒x) Pb(Mg1/3Nb1/3)O3-0.3PbTiO3 (x = 0.01, 0.02, and 0.03) was grown by the vertical Bridgman process. The electrical properties and the ferroelectric domains, as well as the luminescent characteristics of the single crystals, were investigated systematically. The piezoelectric coefficient d33 of the single crystals are slightly higher than that of the undoped PMN-PT single crystal under direct current polarization, while the crystal wafers gain a much higher d33 value upon being polarized with alternating current voltage. The single crystals possess a decreased phase transition temperature of around 60 °C and a decreased Curie temperature of 92~116 °C compared with the undoped PMN-PT single crystal. The crystal wafers polarized with alternating current voltage exhibited a desirable optical transmittance, which is associated with the domain structure changes inside the crystal medium. The domain density of the crystal wafers under alternating current polarization was significantly decreased compared with the direct current polarized crystal wafers. The luminescent spectra of the crystal wafers exhibit the typical emission peaks corresponding to the characteristic transition of Sm3+ ions in the crystal lattice.

Element Segregation and Electrical Properties of PMN-32PT Grown Using the Bridgman Method

A single crystal with nominal composition Pb(Mg1/3Nb2/3)O3-32PbTiO3 (PMN-32PT) was grown by the Bridgman technique. Crystal orientation was determined using the rotating orientation X-ray diffraction (RO-XRD). Element distribution was measured along different directions using inductively coupled plasma-mass spectrometry (ICP-MS). The effect of the element segregation along axial and radial directions on the electrical properties of the PMN-32PT crystal was investigated. It is indicated that the electrical properties of the samples along the axial direction were strongly dependent on the PT (PbTiO3) content. With the increase of the PT content, the piezoelectric coefficient and remnant polarization were improved. Differently, the electrical properties of the samples along the radial direction were mainly determined by the ratio of the Nb and Mg. The reasons for the element segregation and electrical properties varied with the composition were discussed.

Electric and Optical Properties of Pb(Er1/2Nb1/2)-Pb(Mg1/3Nb1/3)-PbTiO3 Crystals

New ferroelectric crystals Pb(Er1/2Nb1/2)-Pb(Mg1/3Nb1/3)O-PbTiO3 (PEN-PMN-PT) were grown by using the flux method. Phase structure of the crystals was described by the X-ray diffraction analysis. Dielectric, ferroelectric and optical properties of the PEN-PMN-PT crystals were investigated systematically. Higher Curie temperature (Tc ~ 291 °C) and larger coercive field (Ec ~ 17.6 kV/cm) for the 40PEN-13PMN-47PT can be obtained, respectively, compared with those of the PMN-PT. Moreover, strong green and red emissions can be excited by using the 980 nm laser. The PEN-PMN-PT crystals with these performances have some promising applications in the electromechanical and optical devices.