FT-Raman spectra of isotope-enriched boron carbide

Insights into the Solution Processing of Non-van der Waals Boron Carbide

Exfoliation of non-layered materials is crucial to unleash their enormous potential in wide range of applications. However, the presence of strong non-van der Waals interactions in all three dimensions makes exfoliation challenging. Boron carbide (B4C), known for its high hardness, holds great potential for diverse applications. In this work, B4C is exfoliated in 29 solvents to determine its Hansen solubility parameters (HSP) and understand the dispersion stability. The experimentally determined HSP values are 19.6, 15.3 and 15.1 MPa1/2 for dispersive interactions (δD), polar interactions (δP) and hydrogen bonding interactions (δH), respectively. Subsequently, in situ dispersion stability is analyzed qualitatively and quantitatively from the space-time resolved extinction profiles employing an analytical centrifuge. The sedimentation kinetics of B4C dispersions are analyzed using instability index, integral extinction and sedimentation velocity. B4C dispersions in solvents like ϵ-caprolactone, isopropyl alcohol, propylene carbonate and formamide exhibited excellent stability. Additionally, B4C nanosheets are utilized to investigate their field emission properties. These nanosheets exhibit a turn-on electric field of 3.35 V/μm at an emission current density of 1 μA cm-2, and it delivered a large emission current density of ~375 μA cm-2 at an applied electric field of 5.7 V/μm.

Phase Transitions in Boron Carbide

The idealized rhombohedral unit cell of boron carbide is formed by a 12-atom icosahedron and a 3-atom linear chain. Phase transitions are second order and caused by the exchange of B and C sites or by vacancies in the structure. Nevertheless, the impact of such minimal structural changes on the properties can be significant. As the X-ray scattering cross sections of B and C isotopes are very similar, the capability of X-ray fine structure investigation is substantially restricted. Phonon spectroscopy helps close this gap as the frequency and strength of phonons sensitively depend on the bonding force and mass of the vibrating atoms concerned. Phase transitions known to date have been identified due to significant changes of properties: (1) The phase transition near the chemical composition B8C by clear change of the electronic structure; (2) the endothermic temperature-dependent phase transition at 712 K according to the change of specific heat; (3) the high-pressure phase transition at 33.2 GPa by the drastic change of optical appearance from opacity to transparency. These phase transitions affect IR- and Raman-active phonons and other solid-state properties. The phase transitions at B~8C and 712 K mean that a well-defined distorted structure is converted into another one. In the high-pressure phase transition, an apparently well-defined distorted structure changes into a highly ordered one. In all these cases, the distribution of polar C atoms in the icosahedra plays a crucial role.

Exfoliation of boron carbide into ultrathin nanosheets

Liquid phase exfoliation (LPE) is a method that can be used to produce bulk quantities of two-dimensional (2D) nanosheets from layered van der Waals (vdW) materials. In recent years, LPE has been applied to several non-vdW materials with anisotropic bonding to produce nanosheets and platelets, but it has not been demonstrated for materials with strong isotropic bonding. In this paper, we demonstrate the exfoliation of boron carbide (B4C), the third hardest known material, into ultrathin nanosheets. B4C has a structure consisting of strongly bonded boron icosahedra and carbon chains, but does not have anisotropic cleavage energies to suggest that it can be readily cleaved into nanosheets. B4C has been widely studied for its very high melting point, high mechanical strength, and chemical stability, as well as its zero- and one-dimensional nanostructured forms. Herein, ultrathin nanosheets are successfully prepared by sonication of B4C powder in organic solvents and are characterized by microscopy and spectroscopy. Density functional theory (DFT) simulations reveal that B4C can be cleaved along several different crystallographic planes with similar energetic favourability, facilititated by an unexpected mechanism of breaking boron icosahedra and forming new boron-rich cage structures at the surface. Atomic force microscopy (AFM) shows that the nanosheets produced by LPE are as thin as 5 nm, with an average thickness of 31.4 nm and average area of 16 000 nm2. Raman spectroscopy shows that many of the nanosheets exhibit additional carbon-rich peaks that change with laser irradiation, which are attributed to atomic rearrangements and amorphization at the nanosheet surfaces, consistent with the diverse cleavage planes. High-resolution transmission electron microscopy (HRTEM) demonstrates that many different cleavage planes exist among the exfoliated nanosheets, in agreement with DFT simulations. This work elucidates the exfoliation mechanism of 2D B4C and suggests that LPE can be applied to generate nanosheets from a variety of non-layered and non-vdW materials.

Systematic error in conventionally measured Raman spectra of boron carbide-A general issue in solid state Raman spectroscopy

Solid state Raman spectroscopy requires careful attention to the penetration depth of exciting laser radiation. In cases like semiconducting boron carbide and metallic hexaborides, high fundamental absorption above the bandgap and reflectivity R ≈ 1 beyond the plasma edge respectively prevent the excitation of bulk phonons largely. Thus, correspondingly measured spectra stem preferably from surface scattering. For decades, Raman spectra of boron carbide obtained with different equipment were controversially discussed. Now, common features of icosahedral phonons in Fourier transform-Raman spectra of B_4.3C and Raman spectra of α-rhombohedral boron evidence their bulk character, while refuting conventionally measured Raman spectra.

Resolving mass spectral overlaps in atom probe tomography by isotopic substitutions - case of TiSi15N

Mass spectral overlaps in atom probe tomography (APT) analyses of complex compounds typically limit the identification of elements and microstructural analysis of a material. This study concerns the TiSiN system, chosen because of severe mass-to-charge-state ratio overlaps of the ¹⁴N⁺ and ²⁸Si²⁺ peaks as well as the ¹⁴N₂⁺ and ²⁸Si⁺ peaks. By substituting ¹⁴N with ¹⁵N, mass spectrum peaks generated by ions composed of one or more N atoms will be shifted toward higher mass-to-charge-state ratios, thereby enabling the separation of N from the predominant Si isotope. We thus resolve thermodynamically driven Si segregation on the nanometer scale in cubic phase Ti_1-xSi_x¹⁵N thin films for Si contents 0.08 ≤ x ≤ 0.19 by APT, as corroborated by transmission electron microscopy. The APT analysis yields a composition determination that is in good agreement with energy dispersive X-ray spectroscopy and elastic recoil detection analyses. Additionally, a method for determining good voxel sizes for visualizing small-scale fluctuations is presented and demonstrated for the TiSiN system.

High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor

Single-crystal B4.3C boron carbide is investigated through the pressure-dependence and inter-relation of atomic distances, optical properties and Raman-active phonons up to ~70 GPa. The anomalous pressure evolution of the gap width to higher energies is striking. This is obtained from observations of transparency, which most rapidly increases around 55 GPa. Full visible optical transparency is approached at pressures of  >60 GPa indicating that the band gap reaches ~3.5 eV; at high pressure, boron carbide is a wide-gap semiconductor. The reason is that the high concentration of structural defects controlling the electronic properties of boron carbide at ambient conditions initially decreases and finally vanishes at high pressures. The structural parameters and Raman-active phonons indicate a pressure-dependent phase transition in single-crystal (nat)B4.3C boron carbide near 40 GPa, likely related to structural changes in the C-B-C chains, while the basic icosahedral structure appears to be less affected.

Hybridization of inorganic CoB noncrystal with graphene and its Kubas-enhanced hydrogen adsorption at room temperature

In this work an archetypical hybrid material has been prepared by the reaction of an inorganic CoB noncrystal with graphene by a high-energy ball-milling process, which showed an enhanced electrochemical hydrogen storage ability induced by the Co–B–C structure.

Isotopic phonon effects in β-rhombohedral boron--non-statistical isotope distribution

On the basis of the spectra of IR- and Raman-active phonons, the isotopic phonon effects in β-rhombohedral boron are analysed for polycrystalline (10)B- and (11)B-enriched samples of different origin and high-purity (nat)B single crystals. Intra- and inter-icosahedral B-B vibrations are harmonic, hence meeting the virtual crystal approximation (VCA) requirements. Deviations from the phonon shift expected according to the VCA are attributed to the anharmonic share of the lattice vibrations. In the case of icosahedral vibrations, the agreement with calculations on α-rhombohedral boron by Shirai and Katayama-Yoshida is quite satisfactory. Phonon shifts due to isotopic disorder in (nat)B are separated and determined. Some phonon frequencies are sensitive to impurities. The isotopic phonon effects yield valuable specific information on the nature of the different phonon modes. The occupation of regular boron sites by isotopes deviates significantly from the random distribution.

Superconductivity in boron carbide? Clarification by low-temperature MIR/FIR spectra

The electronic structure and phonon density of B(13)B(2) boron carbide calculated by Calandra et al (2004 Phys. Rev. B 69 224505) defines this compound as metallic, and the authors predict superconductivity with T(C)s up to 36.7 K. Their results are affected by the same deficiencies as former band structure calculations on boron carbides based on hypothetical crystal structures deviating significantly from the real ones. We present optical mid IR/far IR (MIR/FIR) spectra of boron carbide with compositions between B(4.3)C and B(10.37)C, evidencing semiconducting behaviour at least down to 30 K. There is no indication of superconductivity. The spectra yield new information on numerous localized gap states close to the valence band edge.

Isotopic effects on the phonon modes in boron carbide

The effect of isotopes ((10)B-(11)B; (12)C-(13)C) on the infrared- and Raman-active phonons of boron carbide has been investigated. For B isotopes, the contributions of the virtual crystal approximation, polarization vector and isotopical disorder are separated. Boron and carbon isotope effects are largely opposite to one another and indicate the share of the particular atoms in the atomic assemblies vibrating in specific phonon modes. Some infrared-active phonons behave as expected for monatomic boron crystals.

Raman effect in icosahedral boron-rich solids

We present Raman spectra of numerous icosahedral boron-rich solids having the structure of α-rhombohedral, β-rhombohedral, α-tetragonal, β-tetragonal, YB66, orthorhombic or amorphous boron. The spectra were newly measured and, in some cases, compared with reported data and discussed. We emphasize the importance of a high signal-to-noise ratio in the Raman spectra for detecting weak effects evoked by the modification of compounds, accommodation of interstitial atoms and other structural defects. Vibrations of the icosahedra, occurring in all the spectra, are interpreted using the description of modes in α-rhombohedral boron by Beckel et al. The Raman spectrum of boron carbide is largely clarified. Relative intra- and inter-icosahedral bonding forces are estimated for the different structural groups and for vanadium-doped β-rhombohedral boron. The validity of Badger's rule is demonstrated for the force constants of inter-icosahedral B-B bonds, whereas the agreement is less satisfactory for the intra-icosahedral B-B bonds.

On surface Raman scattering and luminescence radiation in boron carbide

The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications.