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Kesarwani P, Khetan SK, Ojha B, Choudhary RJ, Reddy VR, Bedanta S, Anil Kumar PS, Sow C. Impact of Cr doping on Hall resistivity and magnetic anisotropy in SrRuO 3thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 37:065803. [PMID: 39536444 DOI: 10.1088/1361-648x/ad9212] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2024] [Accepted: 11/12/2024] [Indexed: 11/16/2024]
Abstract
Hall effects, including anomalous and topological types, in correlated ferromagnetic oxides provide an intriguing framework to investigate emergent phenomena arising from the interaction between spin-orbit coupling and magnetic fields. SrRuO3is a widely studied itinerant ferromagnetic system with intriguing electronic and magnetic characteristics. The electronic transport of SrRuO3is highly susceptible to the defects (O/Ru vacancy, chemical doping, ion implantation), and interfacial strain. In this regard, we investigate the impact of Cr doping on the magnetic anisotropy and the Hall effect in SrRuO3thin films. The work encompasses a comprehensive analysis of the structural, spectroscopic, magnetic, and magnetotransport properties of Cr-doped SrRuO3films grown on SrTiO3(001) substrates. Cross-sectional transmission electron microscopy reveals a sharp and coherent interface between the layers. Notably, perpendicular magnetic anisotropy is preserved in doped films with thicknesses up to 113 nm. The resistivity exhibits aT2dependence below the Curie temperature, reflecting the influence of disorder and correlation-induced localization effects. Interestingly, in contrast to the undoped parent compound SrRuO3, an anomaly in the Hall signal has been observed up to a large thickness (56 nm) attributed to the random Cr doping and Ru vacancy. Based on our measurements, a field-temperature (H - T) phase diagram of anomalous Hall resistivity is constructed.
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Affiliation(s)
- Pooja Kesarwani
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
| | - Santosh K Khetan
- Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka, India
| | - B Ojha
- Laboratory for Nanomagnetism and Magnetic Materials (LNMM), School of Physical Sciences, National Institute of Science Education and Research (NISER), An OCC of Homi Bhabha National Institute (HBNI), Jatni 752050, Odisha, India
| | - R J Choudhary
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - V R Reddy
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - Subhankar Bedanta
- Laboratory for Nanomagnetism and Magnetic Materials (LNMM), School of Physical Sciences, National Institute of Science Education and Research (NISER), An OCC of Homi Bhabha National Institute (HBNI), Jatni 752050, Odisha, India
| | - P S Anil Kumar
- Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka, India
| | - Chanchal Sow
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
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Dwivedi GD, Sun SJ, Kuo YK, Chou H. Role of electron-magnon interaction in non-Fermi liquid behavior of SrRuO 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:125602. [PMID: 30625456 DOI: 10.1088/1361-648x/aafd0c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
SrRuO3 is a popular material extensively used as a bottom electrode in various applications, however, a few problems which will certainly change the interface band structure and greatly alter the device's property are still not fully understood, such as the change of carrier types at a certain temperature and the quasiparticle scattering for non-Fermi liquid behavior below ferromagnetic transition temperature. In this study, magnetic, transport (electrical and thermal) properties and x-ray photoemission spectra have been used to understand the role of quasiparticle interactions in the SrRuO3 bulk system. At the Fermi level, the hybridization of Ru4dt 2g ↓ and O2p bands form a typical two band system. In order to explain the problems as mentioned, our present work reveals that there must be an impurity band that couples with the bands around Fermi level and serves as a charge reservoir. In the present case, the impurity is attributed to the Ru vacancies. As a result, the conduction electrons scatter strongly with the Ru vacancies and couple with the Ru magnons to give rise to a dominant electron-magnon coupling that overwhelms the electron-phonon coupling in the temperature range of 90-150 K.
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Affiliation(s)
- G D Dwivedi
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, Republic of China
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Dalal B, Sarkar B, De SK. Effect of Gd and Cr substitution on the structural, electronic and magnetic phases of SrRuO 3: a case study of doping and chemical phase separation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:495803. [PMID: 29087361 DOI: 10.1088/1361-648x/aa9728] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We explore the crystal structure, electrical resistivity and magnetic behavior of the compositional series (SrRuO3)[Formula: see text] (GdCrO3) x (where [Formula: see text]), which resides between orthorhombic ferromagnetic (FM) metal SrRuO3 ([Formula: see text] K) and orthorhombic antiferromagnetic (AFM) insulator GdCrO3 ([Formula: see text] K). Crystal structure analysis reveals that complete solid solution exists only up to [Formula: see text], above which chemical phase separation of two/three phases occurs, and persists up to [Formula: see text]. X-ray photoelectron spectroscopy measurement also corroborates the existence of [Formula: see text] for the intermediate composition [Formula: see text], which reinforces the astonishing scheelite-type GdCrO4 formation (at ambient pressure) for [Formula: see text] compositions. Electrical resistivity measurements affirm the temperature driven metal to insulator (M-I) transition for [Formula: see text] and [Formula: see text] samples. Low temperature insulating state in these samples is interpreted by electron-electron interaction of weak disordered systems. Precise analysis of temperature dependent resistivity for [Formula: see text] samples (which have insulating ground state) dictate that the transport phenomenon is mainly associated with Arrhenius-type charge conduction, Mott's variable range hopping, short-range and long-range Coulomb interaction mediated hopping processes, due to the high degree of randomness. Interruption of magnetic Ru-O-Ru interaction by Ru-O-Cr and Cr-O-Cr interactions lowers the FM transition temperature (T C), and thereby introduces Griffiths phase in phase separated samples. Furthermore, we believe that a sharp rise in magnetization at low temperature for [Formula: see text] samples is due to the formation of AFM GdCrO4 phase. Prominent thermal hysteresis in temperature dependent magnetization curves for [Formula: see text], and appearance of spin-reorientation transition for [Formula: see text] are the distinct indications for transformation into canted AFM GdCrO3 oxide at higher x. The effective magnetic moment ([Formula: see text]) continuously increases with the incorporation of higher moment elements (Gd and Cr); while coercive field (H C) exhibits an abrupt variation as a function of x at the onset of phase separation.
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Affiliation(s)
- B Dalal
- Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032, India
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Tong W, Huang FQ, Chen IW. Electron localization and magnetism in SrRuO3 with non-magnetic cation substitution. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2011; 23:086005. [PMID: 21411908 DOI: 10.1088/0953-8984/23/8/086005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
The destruction of the ferromagnetism of alloyed SrRuO(3) can be caused by electron localization at the substitution sites. Among all the non-magnetic cations that enter the B site, Zr(4+) is the least disruptive to conductivity and ferromagnetism. This is because Zr(4+) does not cause any charge disorder, and its empty d electron states which are poorly matched in energy with the Ru t(2g)(4) states cause the least resonance scattering of Ru's d electrons. Conducting Sr(Ru, Zr)O(3) may be used as an electrode for perovskite-based thin film devices, while its insulating counterpart provides unprecedented magnetoresistance, seldom seen in other non-manganite and non-cobaltite perovskites.
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Affiliation(s)
- W Tong
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
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Hadipour H, Fallahi S, Akhavan M. Ferromagnetism and antiferromagnetism coexistence in SrRu1−xMnxO3: Density functional calculation. J SOLID STATE CHEM 2011. [DOI: 10.1016/j.jssc.2011.01.007] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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