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Fu Y, Kang S, Xiang G, Su C, Gao C, Tan L, Gu H, Wang S, Zheng Z, Dai S, Lin C. Ultraflexible Temperature-Strain Dual-Sensor Based on Chalcogenide Glass-Polymer Film for Human-Machine Interaction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313101. [PMID: 38417448 DOI: 10.1002/adma.202313101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Revised: 01/29/2024] [Indexed: 03/01/2024]
Abstract
Skin-like thermoelectric (TE) films with temperature- and strain-sensing functions are highly desirable for human-machine interaction systems and wearable devices. However, current TE films still face challenges in achieving high flexibility and excellent sensing performance simultaneously. Herein, for the first time, a facile roll-to-roll strategy is proposed to fabricate an ultraflexible chalcogenide glass-polytetrafluoroethylene composite film with superior temperature- and strain-sensing performance. The unique reticular network of the composite film endows it with efficient Seebeck effect and flexibility, leading to a high Seebeck coefficient (731 µV/K), rapid temperature response (≈0.7 s), and excellent strain sensitivity (gauge factor = 836). Based on this high-performance composite film, an intelligent robotic hand for action feedback and temperature alarm is fabricated, demonstrating its great potential in human-machine interaction. Such TE film fabrication strategy not only brings new inspiration for wearable inorganic TE devices, but also sets the stage for a wide implementation of multifunctional human-machine interaction systems.
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Affiliation(s)
- Yanqing Fu
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Shiliang Kang
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Guofeng Xiang
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Chengran Su
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Chengwei Gao
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Linling Tan
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Hao Gu
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Shengpeng Wang
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Zhuanghao Zheng
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shixun Dai
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
| | - Changgui Lin
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, P. R. China
- Zhejiang Key Laboratory of Photoelectric Materials and Devices, Ningbo, 315211, P. R. China
- Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo, 315211, P. R. China
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Zhang H, Zhang Y, Chen C, Yu P, Wang LM, Li G. High-Conductivity Chalcogenide Glasses in Ag-Ga 2Te 3-SnTe Systems and Their Suitability as Thermoelectric Materials. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19170-19177. [PMID: 37016789 DOI: 10.1021/acsami.3c00532] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
A novel high-conductivity Agx[(Ga2Te3)34(SnTe)66]100-x tellurium-based glassy system was fabricated via melt spinning with the glass formation area in the range of x = 0-15 mol %. A bulk Ag10[(Ga2Te3)34(SnTe)66]90 glass (A10) was obtained via spark plasma sintering at 450 K using a 5 min dwell time and 400 MPa pressure. The fabricated A10 glass exhibited higher room-temperature conductivity (σ300 K = 46 S m-1), larger glass transition temperature (Tg = 482 K), and ultralower thermal conductivity (∼0.19 W m-1 K-1) compared to those of previously reported Cu-Ge-Te, Cu-As-Te, Cu-Ge-As-Te, and Cu-As-Se-Te glassy systems with the approximate doping concentrations of 5-20%, demonstrating that this distinctive Ag-Ga2Te3-SnTe system is interesting materials for thermoelectric applications. The high-conductivity Ag-Ga2Te3-SnTe glassy system will extend investigations into similar glassy semiconductors and also can be used for preparing glass ceramics with potential applications in other fields.
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Affiliation(s)
- Huan Zhang
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
| | - Yaqi Zhang
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
- School of Mechanical and Electrical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, P. R. China
| | - Chen Chen
- School of Physical Sciences, Great Bay University, Dongguan, Guangdong 523000, P. R. China
| | - Pengfei Yu
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
| | - Li-Min Wang
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
| | - Gong Li
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
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Zheng J, Chen J, Tang Y, Shen K, He B, Shen L, Ge W, Yang P, Deng S. An enhancement of thermoelectric performance in Na/Cd co-doped β-Zn4Sb3 prepared by NaCl flux. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2021.122754] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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Chatterjee K, Ghosh TK. Thermoelectric Materials for Textile Applications. Molecules 2021; 26:3154. [PMID: 34070466 PMCID: PMC8197455 DOI: 10.3390/molecules26113154] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Revised: 05/18/2021] [Accepted: 05/20/2021] [Indexed: 11/29/2022] Open
Abstract
Since prehistoric times, textiles have served an important role-providing necessary protection and comfort. Recently, the rise of electronic textiles (e-textiles) as part of the larger efforts to develop smart textiles, has paved the way for enhancing textile functionalities including sensing, energy harvesting, and active heating and cooling. Recent attention has focused on the integration of thermoelectric (TE) functionalities into textiles-making fabrics capable of either converting body heating into electricity (Seebeck effect) or conversely using electricity to provide next-to-skin heating/cooling (Peltier effect). Various TE materials have been explored, classified broadly into (i) inorganic, (ii) organic, and (iii) hybrid organic-inorganic. TE figure-of-merit (ZT) is commonly used to correlate Seebeck coefficient, electrical and thermal conductivity. For textiles, it is important to think of appropriate materials not just in terms of ZT, but also whether they are flexible, conformable, and easily processable. Commercial TEs usually compromise rigid, sometimes toxic, inorganic materials such as bismuth and lead. For textiles, organic and hybrid TE materials are more appropriate. Carbon-based TE materials have been especially attractive since graphene and carbon nanotubes have excellent transport properties with easy modifications to create TE materials with high ZT and textile compatibility. This review focuses on flexible TE materials and their integration into textiles.
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Affiliation(s)
| | - Tushar K. Ghosh
- Department of Textile Engineering, Chemistry and Science, North Carolina State University, Raleigh, NC 27695, USA;
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Saetova NS, Raskovalov AA, Il’ina EA, Antonov BD, Grzhegorzhevskii KV. Structure and Electrical Conductivity of Glasses 30Na2O–xV2O5–(70 – x)B2O3: Experiment and Molecular Dynamics with Self-Assembly Elements. RUSS J INORG CHEM+ 2021. [DOI: 10.1134/s003602362103013x] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Srinivasan B, Gellé A, Gucci F, Boussard-Pledel C, Fontaine B, Gautier R, Halet JF, Reece MJ, Bureau B. Realizing a stable high thermoelectric zT ∼ 2 over a broad temperature range in Ge1−x−yGaxSbyTe via band engineering and hybrid flash-SPS processing. Inorg Chem Front 2019. [DOI: 10.1039/c8qi00703a] [Citation(s) in RCA: 65] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report a remarkably high and stable thermoelectric zT ∼ 2 by manipulating the electronic bands in hybrid flash-SPSed Ga–Sb codoped GeTe.
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Affiliation(s)
- Bhuvanesh Srinivasan
- Univ. Rennes
- Ecole Nationale Supérieure de Chimie de Rennes
- CNRS
- ISCR – UMR 6226
- F-35000 Rennes
| | - Alain Gellé
- Univ. Rennes
- CNRS
- IPR – UMR 6251
- F-35000 Rennes
- France
| | - Francesco Gucci
- School of Engineering and Materials Science
- Queen Mary University of London
- London E1 4NS
- UK
| | | | - Bruno Fontaine
- Univ. Rennes
- Ecole Nationale Supérieure de Chimie de Rennes
- CNRS
- ISCR – UMR 6226
- F-35000 Rennes
| | - Régis Gautier
- Univ. Rennes
- Ecole Nationale Supérieure de Chimie de Rennes
- CNRS
- ISCR – UMR 6226
- F-35000 Rennes
| | - Jean-François Halet
- Univ. Rennes
- Ecole Nationale Supérieure de Chimie de Rennes
- CNRS
- ISCR – UMR 6226
- F-35000 Rennes
| | - Michael J. Reece
- School of Engineering and Materials Science
- Queen Mary University of London
- London E1 4NS
- UK
| | - Bruno Bureau
- Univ. Rennes
- Ecole Nationale Supérieure de Chimie de Rennes
- CNRS
- ISCR – UMR 6226
- F-35000 Rennes
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7
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Srinivasan B, Fontaine B, Gucci F, Dorcet V, Saunders TG, Yu M, Cheviré F, Boussard-Pledel C, Halet JF, Gautier R, Reece MJ, Bureau B. Effect of the Processing Route on the Thermoelectric Performance of Nanostructured CuPb 18SbTe 20. Inorg Chem 2018; 57:12976-12986. [PMID: 30285420 DOI: 10.1021/acs.inorgchem.8b02248] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The quaternary AgPb18SbTe20 compound (abbreviated as LAST) is a prominent thermoelectric material with good performance. Endotaxially embedded nanoscale Ag-rich precipitates contribute significantly to decreased lattice thermal conductivity (κlatt) in LAST alloys. In this work, Ag in LAST alloys was completely replaced by the more economically available Cu. Herein, we conscientiously investigated the different routes of synthesizing CuPb18SbTe20 after vacuum-sealed-tube melt processing, including (i) slow cooling of the melt, (ii) quenching and annealing, and consolidation by (iii) spark plasma sintering (SPS) and also (iv) by the state-of-the-art flash SPS. Irrespective of the method of synthesis, the electrical (σ) and thermal (κtot) conductivities of the CuPb18SbTe20 samples were akin to those of LAST alloys. Both the flash-SPSed and slow-cooled CuPb18SbTe20 samples with nanoscale dislocations and Cu-rich nanoprecipitates exhibited an ultralow κlatt ∼ 0.58 W/m·K at 723 K, comparable with that of its Ag counterpart, regardless of the differences in the size of the precipitates, type of precipitate-matrix interfaces, and other nanoscopic architectures. The sample processed by flash SPS manifested higher figure of merit ( zT ∼ 0.9 at 723 K) because of better optimization and a trade-off between the transport properties by decreasing the carrier concentration and κlatt without degrading the carrier mobility. In spite of their comparable σ and κtot, zT of the Cu samples is low compared to that of the Ag samples because of their contrasting thermopower values. First-principles calculations attribute this variation in the Seebeck coefficient to dwindling of the energy gap (from 0.1 to 0.02 eV) between the valence and conduction bands in MPb18SbTe20 (M = Cu or Ag) when Cu replaces Ag.
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Affiliation(s)
- Bhuvanesh Srinivasan
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France.,Nanoforce Technology Ltd., School of Engineering and Materials Science , Queen Mary University of London , London E1 4NS , United Kingdom
| | - Bruno Fontaine
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France
| | - Francesco Gucci
- Nanoforce Technology Ltd., School of Engineering and Materials Science , Queen Mary University of London , London E1 4NS , United Kingdom
| | - Vincent Dorcet
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France
| | - Theo Graves Saunders
- Nanoforce Technology Ltd., School of Engineering and Materials Science , Queen Mary University of London , London E1 4NS , United Kingdom
| | - Min Yu
- Nanoforce Technology Ltd., School of Engineering and Materials Science , Queen Mary University of London , London E1 4NS , United Kingdom
| | - François Cheviré
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France
| | - Catherine Boussard-Pledel
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France
| | - Jean-François Halet
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France
| | - Régis Gautier
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France
| | - Michael J Reece
- Nanoforce Technology Ltd., School of Engineering and Materials Science , Queen Mary University of London , London E1 4NS , United Kingdom
| | - Bruno Bureau
- Univ. Rennes, Ecole Nationale Supérieure de Chimie de Rennes, CNRS, ISCR, UMR 6226 , Rennes F-35000 , France
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8
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Vaney JB, Carreaud J, Piarristeguy A, Morin C, Delaizir G, Viennois R, Colas M, Cornette J, Alleno E, Monnier J, Bigot M, Gonçalves AP, Branco Lopes E, Cuello GJ, Nassif V, Candolfi C, Lenoir B, Pradel A. Stabilization of Metastable Thermoelectric Crystalline Phases by Tuning the Glass Composition in the Cu-As-Te System. Inorg Chem 2018; 57:754-767. [PMID: 29266938 DOI: 10.1021/acs.inorgchem.7b02683] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Recrystallization of amorphous compounds can lead to the stabilization of metastable crystalline phases, which offers an interesting way to unveil novel binary or ternary compounds and control the transport properties of the obtained glass ceramics. Here, we report on a systematic study of the Cu-As-Te glassy system and show that under specific synthesis conditions using the spark-plasma-sintering technique, the α-As2Te3 and β-As2Te3 binary phases and the previously unreported AsTe3 phase can be selectively crystallized within an amorphous matrix. The microstructures and transport properties of three different glass ceramics, each of them containing one of these phases with roughly the same crystalline fraction (∼30% in volume), were investigated in detail by means of X-ray diffraction, scanning electron microscopy, neutron thermodiffraction, Raman scattering (experimental and lattice-dynamics calculations), and transport-property measurements. The physical properties of the glass ceramics are compared with those of both the parent glasses and the pure crystalline phases that could be successfully synthesized. SEM images coupled with Raman spectroscopy evidence a "coast-to-island" or dendriticlike microstructure with microsized crystallites. The presence of the crystallized phase results in a significant decrease in the electrical resistivity while maintaining the thermal conductivity to low values. This study demonstrates that new compounds with interesting transport properties can be obtained by recrystallization, which in turn provides a tuning parameter for the transport properties of the parent glasses.
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Affiliation(s)
- Jean-Baptiste Vaney
- Institut Jean Lamour (IJL) , UMR 7198 CNRS, Université de Lorraine, 2 allée André Guinier-Campus ARTEM, BP 50840, 54011 Nancy Cedex, France.,Institut Charles Gerhardt (ICG) , UMR 5253 CNRS, Université de Montpellier, 34090 Montpellier, France
| | - Julie Carreaud
- Science des Procédés Céramiques et de Traitements de Surface (SPCTS) , UMR CNRS 7315, Centre Européen de la Céramique, 87068 Limoges, France
| | - Andrea Piarristeguy
- Institut Charles Gerhardt (ICG) , UMR 5253 CNRS, Université de Montpellier, 34090 Montpellier, France
| | - Cédric Morin
- Institut de Chimie et des Matériaux de Paris Est (ICMPE) , UMR 7182 CNRS, CMTR, 94320 Thiais, France
| | - Gaëlle Delaizir
- Science des Procédés Céramiques et de Traitements de Surface (SPCTS) , UMR CNRS 7315, Centre Européen de la Céramique, 87068 Limoges, France
| | - Romain Viennois
- Institut Charles Gerhardt (ICG) , UMR 5253 CNRS, Université de Montpellier, 34090 Montpellier, France
| | - Maggy Colas
- Science des Procédés Céramiques et de Traitements de Surface (SPCTS) , UMR CNRS 7315, Centre Européen de la Céramique, 87068 Limoges, France
| | - Julie Cornette
- Science des Procédés Céramiques et de Traitements de Surface (SPCTS) , UMR CNRS 7315, Centre Européen de la Céramique, 87068 Limoges, France
| | - Eric Alleno
- Institut de Chimie et des Matériaux de Paris Est (ICMPE) , UMR 7182 CNRS, CMTR, 94320 Thiais, France
| | - Judith Monnier
- Institut de Chimie et des Matériaux de Paris Est (ICMPE) , UMR 7182 CNRS, CMTR, 94320 Thiais, France
| | - Mickaël Bigot
- Institut Charles Gerhardt (ICG) , UMR 5253 CNRS, Université de Montpellier, 34090 Montpellier, France
| | | | - Elsa Branco Lopes
- C2TN, Instituto Superior Técnico, Universidade de Lisboa , 2695-066 Bobadela, Portugal
| | | | - Vivian Nassif
- Université Grenoble Alpes , 38400 Grenoble, France.,CNRS, Institut Néel , 38042 Grenoble, France
| | - Christophe Candolfi
- Institut Jean Lamour (IJL) , UMR 7198 CNRS, Université de Lorraine, 2 allée André Guinier-Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
| | - Bertrand Lenoir
- Institut Jean Lamour (IJL) , UMR 7198 CNRS, Université de Lorraine, 2 allée André Guinier-Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
| | - Annie Pradel
- Institut Charles Gerhardt (ICG) , UMR 5253 CNRS, Université de Montpellier, 34090 Montpellier, France
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Srinivasan B, Boussard-Pledel C, Dorcet V, Samanta M, Biswas K, Lefèvre R, Gascoin F, Cheviré F, Tricot S, Reece M, Bureau B. Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi. MATERIALS 2017; 10:ma10040328. [PMID: 28772687 PMCID: PMC5506923 DOI: 10.3390/ma10040328] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2017] [Revised: 03/17/2017] [Accepted: 03/20/2017] [Indexed: 11/20/2022]
Abstract
Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.
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Affiliation(s)
- Bhuvanesh Srinivasan
- Équipe Verres et Céramiques, ISCR CNRS UMR 6226, Université de Rennes 1, Rennes 35042, France.
| | | | - Vincent Dorcet
- PRATS, ISCR CNRS UMR 6226, Université de Rennes 1, Rennes 35042, France.
| | - Manisha Samanta
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
| | - Robin Lefèvre
- ENSICAEN, UNICAEN, CNRS, IUT-Caen, CRISMAT, Normandie Université, Caen 14050, France.
| | - Franck Gascoin
- ENSICAEN, UNICAEN, CNRS, IUT-Caen, CRISMAT, Normandie Université, Caen 14050, France.
| | - François Cheviré
- Équipe Verres et Céramiques, ISCR CNRS UMR 6226, Université de Rennes 1, Rennes 35042, France.
| | - Sylvain Tricot
- Institut de Physique de Rennes, CNRS UMR 6251-Université de Rennes 1, Rennes 35042, France.
| | - Michael Reece
- School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK.
| | - Bruno Bureau
- Équipe Verres et Céramiques, ISCR CNRS UMR 6226, Université de Rennes 1, Rennes 35042, France.
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10
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Ivanou D, Ivanova Y, Lisenkov A, Zheludkevich M, Streltsov E. Electrochemical deposition of lead and tellurium into barrierless nanoporous anodic aluminium oxide. Electrochim Acta 2012. [DOI: 10.1016/j.electacta.2012.05.061] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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