Low-temperature phase transition of ZnS: The critical role of ZnO

Study on the Performance of Oxygen-Rich Zn(O,S) Buffers Fabricated by Sputtering Deposition and Zn(O,S)/Cu(In,Ga)(S,Se)2 Interfaces

We developed a novel process for fabricating oxygen-rich Zn(O,S) buffer layers by magnetron reactive sputtering with a single oxygen-rich Zn(O,S) target, suitable for industrial all-dry production. Then, we successfully fabricated Cd-free Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells. By varying the oxygen partial pressure during sputtering from 0 to 20%, we precisely controlled the Zn(O,S) composition, then systematically investigated its effects on the quality of oxygen-rich Zn(O,S) films, the properties of formed p-n junctions, and the performance of CIGSSe solar cells with Zn(O,S) buffer. We demonstrated that reactive sputtering with a Zn(O,S) target can generate a homogeneous, high-quality oxygen-rich Zn(O,S) buffer on large-area substrates. We observed a unique and unusual phenomenon: the appropriate content of secondary phase ZnSO₄ and ZnSO₃ improved the band alignment for oxygen-rich Zn(O,S). Combining our proposed schematic diagram of band alignmentat the Zn(O,S)/CIGSSe interface, we established a crucial correlation between the device performance and the interfacial properties at the p-n junction. For the CIGSSe device performance, the band alignment matching at the heterojunction plays a primary role, and the quality of oxygen-rich Zn(O,S) films plays a secondary role. Consequently, an excellent oxygen-rich Zn(O,S) buffer can be obtained with 10% Zn(O,S) deposition oxygen partial pressure , and the optimized device shows a higher V_oc (447 mV) and a similar conversion efficiency (11.2%) than conventional CIGSSe devices with CdS buffer.

The Critical Role of Thioacetamide Concentration in the Formation of ZnO/ZnS Heterostructures by Sol-Gel Process

ZnO/ZnS heterostructures have emerged as an attractive approach for tailoring the properties of particles comprising these semiconductors. They can be synthesized using low temperature sol-gel routes. The present work yields insight into the mechanisms involved in the formation of ZnO/ZnS nanostructures. ZnO colloidal suspensions, prepared by hydrolysis and condensation of a Zn acetate precursor solution, were allowed to react with an ethanolic thioacetamide solution (TAA) as sulfur source. The reactions were monitored in situ by Small Angle X-ray Scattering (SAXS) and UV-vis spectroscopy, and the final colloidal suspensions were characterized by High Resolution Transmission Electron Microscopy (HRTEM). The powders extracted at the end of the reactions were analyzed by X-ray Absorption spectroscopy (XAS) and X-ray diffraction (XRD). Depending on TAA concentration, different nanostructures were revealed. ZnO and ZnS phases were mainly obtained at low and high TAA concentrations, respectively. At intermediate TAA concentrations, we evidenced the formation of ZnO/ZnS heterostructures. ZnS formation could take place via direct crystal growth involving Zn ions remaining in solution and S ions provided by TAA and/or chemical conversion of ZnO to ZnS. The combination of all the characterization techniques was crucial to elucidate the reaction steps and the nature of the final products.

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing

We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.