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Kapush O, Dzhagan V, Mazur N, Havryliuk Y, Karnaukhov A, Redko R, Budzulyak S, Boruk S, Babichuk I, Danylenko M, Yukhymchuk V. Raman study of colloidal Cu 2ZnSnS 4 nanocrystals obtained by "green" synthesis modified by seed nanocrystals or extra cations in the solution. Heliyon 2023; 9:e16037. [PMID: 37206011 PMCID: PMC10189388 DOI: 10.1016/j.heliyon.2023.e16037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/23/2023] [Accepted: 05/03/2023] [Indexed: 05/21/2023] Open
Abstract
The method of affordable colloidal synthesis of nanocrystalline Cu2ZnSnS4 (CZTS) is developed, which is suitable for obtaining bare CZTS nanocrystals (NCs), cation substituted CZTS NCs, and CZTS-based hetero-NCs. For the hetero-NCs, the synthesized in advance NCs of another material are introduced into the reaction solution so that the formation of CZTS takes place preferably on these "seed" NCs. Raman spectroscopy is used as the primary method of structural characterization of the NCs in this work because it is very sensitive to the CZTS structure and allows to probe NCs both in solutions and films. Raman data are corroborated by optical absorption measurements and transmission electron microscopy on selected samples. The CdTe and Ag NCs are found to be good seed NCs, resulting in a comparable or even better quality of the CZTS compound compared to bare CZTS NCs. For Au NCs, on the contrary, no hetero-NCs could be obtained under the given condition. Partial substitution of Zn for Ba during the synthesis of bare CZTS NCs results in a superior structural quality of NCs, while the introduction of Ag for partial substitution of Cu deteriorates the structural quality of the NCs.
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Affiliation(s)
- O.A. Kapush
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - V.M. Dzhagan
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- Physics Department, Taras Shevchenko National University of Kyiv, 60 Volodymyrs'ka Str., 01601, Kyiv, Ukraine
- Corresponding author. V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine.;
| | - N.V. Mazur
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - Ye.O. Havryliuk
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- Semiconductor Physics, Chemnitz University of Technology, D-09107, Chemnitz, Germany
- Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, D-09107, Chemnitz, Germany
| | - A. Karnaukhov
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - R.A. Redko
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- State University of Telecommunications, 7 Solomenska Str., 03680, Kyiv, Ukraine
| | - S.I. Budzulyak
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
| | - S. Boruk
- Yurii Fedkovich Chernivtsi National University, 25, Lesia Ukrainka Str., 58000, Chernivtsi, Ukraine
| | - I.S. Babichuk
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
- Faculty of Intelligent Manufacturing, Wuyi University, Jiangmen, 529020, PR China
| | - M.I. Danylenko
- Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Kyiv, Ukraine
| | - V.O. Yukhymchuk
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 45 Nauky Av., 03028, Kyiv, Ukraine
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Gao M, Cai B, Liu G, Xu L, Zhang S, Zeng H. Machine learning and density functional theory simulation of the electronic structural properties for novel quaternary semiconductors. Phys Chem Chem Phys 2023; 25:9123-9130. [PMID: 36938685 DOI: 10.1039/d2cp04244d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/07/2023]
Abstract
In order to accelerate the application of quaternary optoelectronic materials in the field of luminescence, it is crucial to develop new quaternary semiconductor materials with excellent properties. However, faced with vast alternative quaternary semiconductors, traditional trial-and-error methods tend to be laborious and inefficient. Here, we combined machine learning (ML) with density functional theory (DFT) calculation to predict the bandgaps of 2180 quaternary semiconductors, most of which were undeveloped but environmentally friendly. The evaluation coefficient (R2) of the model using a random forest algorithm was up to 0.93 in ML. Four novel quaternary semiconductors with direct bandgaps: Ag2InGaS4, AgZn2InS4, Ag2ZnSnS4, and AgZn2GaS4, were selected from the ML model. Then their electronic structures and optical properties were further verified and studied by DFT calculations, which demonstrated that the four quaternary semiconductors had direct bandgaps, a small effective mass, and a large exciton binding energy and Stokes shift. Our calculation could significantly speed up the discovery of novel optoelectronic semiconductors and has a certain reference value for the study of luminescent materials and devices.
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Affiliation(s)
- Mengwei Gao
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Bo Cai
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China. .,State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
| | - Gaoyu Liu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Lili Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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Zhou W, Zhang Q, Yao WD, Xue H, Guo SP. Stepwise Li Substitution Induced Structure Evolution and Improved Nonlinear Optical Performance for Diamond-like Sulfides. Inorg Chem 2021; 60:12536-12544. [PMID: 34314587 DOI: 10.1021/acs.inorgchem.1c01793] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
One of the key scientific issues for exploration of novel infrared nonlinear optical (NLO) crystals is to obtain ones with good hybrid NLO behaviors. Herein, we report four diamond-like Ag-based sulfides via stepwise Li substitution of Ag in Ag2ZnSnS4, including Ag2ZnSnS4 (1), (Li1.22Ag0.78)ZnSnS4 (2), (Li1.58Ag0.42)ZnSnS4 (3), and Li2ZnSnS4 (4). With the increase of Li content, the sulfide's noncentrosymmetric crystal structure changes from tetragonal I42m for 1, to orthorhombic Pmn21 for 2 and 3, and to monoclinic Pn for 4. Accordingly, their NLO responses are improved along with the increase of Li content, viz. from non-NLO-active for 1, to non-phase-matchable for 2 and 3, and to phase-matchable for 4. Their optical band gaps also increase regularly. The relationship between their chemical compositions, crystal structures, and NLO activities is investigated by means of chemical structural analysis and theoretical calculation. This work offers a new systematic case for designing promising NLO-active compounds via rarely adopted cation's stepwise partial substitution and understanding the chemical composition-structure-NLO property relationship.
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Affiliation(s)
- Wenfeng Zhou
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Qing Zhang
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Wen-Dong Yao
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Huaiguo Xue
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Sheng-Ping Guo
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
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Dzhagan V, Selyshchev O, Havryliuk Y, Mazur N, Raievska O, Stroyuk O, Kondratenko S, Litvinchuk AP, Valakh MY, Zahn DRT. Raman and X-ray Photoelectron Spectroscopic Study of Aqueous Thiol-Capped Ag-Zn-Sn-S Nanocrystals. MATERIALS (BASEL, SWITZERLAND) 2021; 14:3593. [PMID: 34199129 PMCID: PMC8269621 DOI: 10.3390/ma14133593] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/28/2021] [Revised: 06/18/2021] [Accepted: 06/23/2021] [Indexed: 11/16/2022]
Abstract
The synthesis of (Cu,Ag)-Zn-Sn-S (CAZTS) and Ag-Zn-Sn-S (AZTS) nanocrystals (NCs) by means of "green" chemistry in aqueous solution and their detailed characterization by Raman spectroscopy and several complementary techniques are reported. Through a systematic variation of the nominal composition and quantification of the constituent elements in CAZTS and AZTS NCs by X-ray photoemission spectroscopy (XPS), we identified the vibrational Raman and IR fingerprints of both the main AZTS phase and secondary phases of Ag-Zn-S and Ag-Sn-S compounds. The formation of the secondary phases of Ag-S and Ag-Zn-S cannot be avoided entirely for this type of synthesis. The Ag-Zn-S phase, having its bandgap in near infrared range, is the reason for the non-monotonous dependence of the absorption edge of CAZTS NCs on the Ag content, with a trend to redshift even below the bandgaps of bulk AZTS and CZTS. The work function, electron affinity, and ionization potential of the AZTS NCs are derived using photoelectron spectroscopy measurements.
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Affiliation(s)
- Volodymyr Dzhagan
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 03038 Kyiv, Ukraine; (V.D.); (Y.H.); (N.M.); (M.Y.V.)
- Physics Department, Taras Shevchenko National University of Kyiv, 60 Volodymyrs’ka str., 01601 Kyiv, Ukraine;
| | - Oleksandr Selyshchev
- Semiconductor Physics, Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany; (O.S.); (O.R.)
| | - Yevhenii Havryliuk
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 03038 Kyiv, Ukraine; (V.D.); (Y.H.); (N.M.); (M.Y.V.)
- Semiconductor Physics, Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany; (O.S.); (O.R.)
| | - Nazar Mazur
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 03038 Kyiv, Ukraine; (V.D.); (Y.H.); (N.M.); (M.Y.V.)
| | - Oleksandra Raievska
- Semiconductor Physics, Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany; (O.S.); (O.R.)
- Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09107 Chemnitz, Germany
- L.V. Pysarzhevsky Institute of Physical Chemistry, National Academy of Science of Ukraine, 03028 Kyiv, Ukraine
| | - Oleksandr Stroyuk
- Forschungszentrum Jülich GmbH, Helmholtz-Institut Erlangen Nürnberg für Erneuerbare Energien (HI ERN), 91058 Erlangen, Germany;
| | - Serhiy Kondratenko
- Physics Department, Taras Shevchenko National University of Kyiv, 60 Volodymyrs’ka str., 01601 Kyiv, Ukraine;
| | - Alexander P. Litvinchuk
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204-5002, USA;
| | - Mykhailo Ya. Valakh
- V. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, 03038 Kyiv, Ukraine; (V.D.); (Y.H.); (N.M.); (M.Y.V.)
| | - Dietrich R. T. Zahn
- Semiconductor Physics, Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany; (O.S.); (O.R.)
- Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09107 Chemnitz, Germany
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