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Zhang Q, Liu L, Yuan T, Hou J, Yang X. Design of highly selective and stable CsPbI 3 perovskite catalyst for photocatalytic reduction of CO 2 to C 1 products. J Colloid Interface Sci 2024; 659:936-944. [PMID: 38219312 DOI: 10.1016/j.jcis.2024.01.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 12/16/2023] [Accepted: 01/04/2024] [Indexed: 01/16/2024]
Abstract
Finding efficient photocatalytic carbon dioxide reduction catalysts is one of the core issues in addressing global climate change. Herein, the pristine CsPbI3 perovskite and doped CsPbI3 perovskite were evaluated in carbon dioxide reduction reaction (CO2RR) to C1 products by using density functional theory. Free energy testing and electronic structure analysis methods have shown that doped CsPbI3 exhibits more effective catalytic performance, higher selectivity, and stability than undoped CsPbI3. Additionally, it is discovered that CsPbI3 (100) and (110) crystal surfaces have varied product selectivity. The photo-catalytic effectiveness is increased by the narrower band gap of Bi and Sn doped CsPbI3, which broadens the absorption spectrum of visible light and makes electron transport easier. The calculation results indicate that Bi doped CsPbI3 (100) and CsPbI3 (110) crystal faces exhibit good selectivity towards CH4, with free energy barriers as low as 0.55 eV and 0.58 eV, respectively. Sn doped CsPbI3 (100) and CsPbI3 (110) crystal planes exhibit good selectivity for HCOOH and CH3OH, respectively. The results indicate that the Bi and Sn doped CsPbI3 perovskite catalyst can further improve the CO2 photocatalytic activity and high selectivity for C1 products, making it a suitable substrate material for high-performance CO2RR.
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Affiliation(s)
- Qiming Zhang
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology/College of Science, Shihezi University, Shihezi 832003, Xinjiang, China
| | - Linhao Liu
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology/College of Science, Shihezi University, Shihezi 832003, Xinjiang, China
| | - Tianbin Yuan
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology/College of Science, Shihezi University, Shihezi 832003, Xinjiang, China
| | - Juan Hou
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology/College of Science, Shihezi University, Shihezi 832003, Xinjiang, China.
| | - Xiaodong Yang
- Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology/College of Science, Shihezi University, Shihezi 832003, Xinjiang, China.
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Bian L, Cao F, Li L. Performance Improvement of Lead-Based Halide Perovskites through B-Site Ion-Doping Strategies. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302700. [PMID: 37144436 DOI: 10.1002/smll.202302700] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 04/18/2023] [Indexed: 05/06/2023]
Abstract
Owing to their excellent properties, lead halide perovskites have attracted extensive attention in the photoelectric field. Presently, the certified power conversion efficiency of perovskite solar cells has reached 25.7%, the specific detectivity of perovskite photodetectors has exceeded 1014 Jones, and the external quantum efficiency of perovskite-based light-emitting diode has exceeded 26%. However, their practical applications are limited by the inherent instability induced by the perovskite structure due to moisture, heat, and light. Therefore, one of the widely used strategies to address the issue is to replace partial ions of the perovskites with ions of smaller radii to shorten the bond length between halides and metal cations, improving the bond energy and enhancing the perovskite stability. Particularly, the B-site cation in the perovskite structure can affect the size of eight cubic octahedrons and their gap. However, the X-site can only affect four such voids. This review comprehensively summarizes the recent progress in B-site ion-doping strategies for lead halide perovskites and provides some perspectives for further performance improvements.
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Affiliation(s)
- Liukang Bian
- School of Physical Science and Technology, Center for Energy Conversion Materials and Physics (CECMP), Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, China
| | - Fengren Cao
- School of Physical Science and Technology, Center for Energy Conversion Materials and Physics (CECMP), Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, China
| | - Liang Li
- School of Physical Science and Technology, Center for Energy Conversion Materials and Physics (CECMP), Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, China
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Zhang M, Xiang G, Wu Y, Liu J, Leng J, Cheng C, Ma H. Revealing the influence of doping elements (Ge, Sn, Ca, and Sr) on the properties of α-CsPbI 3: a DFT investigation. OPTICS EXPRESS 2023; 31:28624-28635. [PMID: 37710912 DOI: 10.1364/oe.497836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Accepted: 07/31/2023] [Indexed: 09/16/2023]
Abstract
In this study, using density functional theory, we calculated the band structure and photoelectric properties in a series of 12.5% B-doped (B = Ge, Sn, Ca, and Sr) CsPbI3 perovskite systems. It is found that Ge doping can improve the structural stability and is more conducive to applications under high-pressure or by applying stress via calculating the bond length, formation energy, elastic properties, and electronic local function. In addition, the optimal direction for applying stress is achieved according to the elastic properties. Furthermore, in terms of electronic properties, the reason of energy band variation and the influence of chemical bond on the structural stability of doped α-CsPbI3 are investigated. The possibility of the applications of the CsPb0.875B0.125I3 perovskite is explored based on the optical properties. Thus, the theoretical study of the CsPb0.875B0.125I3 perovskite provides novel insights into the design of next-generation photoelectric and photovoltaic materials.
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Zhang M, Xiang G, Wu Y, Liu J, Leng J, Cheng C, Ma H. Influence of Sr doping on the photoelectronic properties of CsPbX 3 (X = Cl, Br, or I): a DFT investigation. Phys Chem Chem Phys 2023; 25:9592-9598. [PMID: 36942656 DOI: 10.1039/d2cp05867g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/09/2023]
Abstract
To broaden the application of cesium lead halide perovskites, doping technology has been widely proposed. In this study, we calculated a 12.5% concentration of a Sr-doped CsPbX3 (X = Cl, Br, or I) perovskite via density functional theory. The results showed that the bandgap energy of the perovskite increased by 0.2-0.3 eV. The high symmetry points of the energy band changed from R to Γ after Sr doping because the Sr doping affected the initial distribution of atomic orbital hybridization. In addition, optical absorption spectra after doping showed an obvious blueshift, whereas the absorption coefficient of CsPb0.875Sr0.125X3 had the same magnitude as undoped CsPbX3. Moreover, the effective masses of electrons and holes changed within a small range (0.01-0.03 m0) after Sr doping. According to the findings of this study, the CsPb0.875Sr0.125X3 perovskite is expected to become an ideal candidate material for designing photovoltaic and photoelectric devices.
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Affiliation(s)
- Man Zhang
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Guangbiao Xiang
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Yanwen Wu
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Jing Liu
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Jiancai Leng
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Chen Cheng
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
| | - Hong Ma
- Shandong Provincial Key Laboratory of Optics and Photonic Device & Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
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