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Wen L, Zhang Q, Shi J, Wang F, Wang S, Chen Z, Yue Y, Gao Y. Layered Topological Insulator MnBi 2Te 4 as a Cathode for a High Rate Performance Aqueous Zinc-Ion Battery. ACS NANO 2024. [PMID: 38335299 DOI: 10.1021/acsnano.4c01137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Recently, the topological insulator MnBi2Te4 has aroused great attention owing to its exotic quantum phenomena and intriguing device applications, but the superior performances of MnBi2Te4 have not been researched in the field of electrochemistry. By theoretical calculations, it is found that MnBi2Te4 exhibits excellent Zn2+ storage and transport properties. Therefore, it is speculated that MnBi2Te4 has excellent electrochemical performance in zinc-ion batteries (ZIBs). In this research, MnBi2Te4 as a pioneer has been explored in ZIBs, showing surprising electrochemical properties. The MnBi2Te4 electrode displays a high average discharge specific capacity (264.8 mA h g-1 at 0.40 A g-1), a competitive cycle life (88.6% of initial capacity after 400 cycles at 4.00 A g-1), and an excellent rate performance (average capacity retention rate of 95.1% from 0.40 to 8.00 A g-1) owing to the fast ion transport of the conductive topological surface state and dissipationless channel of the edge state. Surprisingly, the quasi-solid-state (QSS) MnBi2Te4/Zn battery delivers excellent Zn2+ storage capability and possesses a capacity retention of 79.9% after 1000 cycles at 4.00 A g-1. In addition, the QSS MnBi2Te4/Zn battery can exhibit excellent performance and the GCD curves maintain stability without distortion deformation even at temperatures of 0 and 75 °C.
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Affiliation(s)
- Li Wen
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Qixiang Zhang
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Junjie Shi
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Fei Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei 230601, China
| | - Siliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei 230601, China
| | - Zhiwei Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, Hefei 230601, China
| | - Yang Yue
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Yihua Gao
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics and Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
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