Measuring the dielectric constant of materials from valence EELS

Practical Considerations for Simulating the Plasmonic Properties of Metal Nanoparticles

Simulating the plasmonic properties of colloidally derived metal nanoparticles with accuracy to their experimentally observed measurements is challenging due to the many structural and compositional parameters that influence their scattering and absorption properties. Correlation between single nanoparticle scattering measurements and simulated spectra emphasize these strong structural and compositional relationships, providing insight into the design of plasmonic nanoparticles. This Perspective builds from this history to highlight how the structural features of models used in simulation methods such as those based on the Finite-Difference Time-Domain (FDTD) method and Discrete Dipole Approximation (DDA) are of critical consideration for correlation with experiment and ultimately prediction of new nanoparticle properties. High-level characterizations such as electron tomography are discussed as ways to advance the accuracy of models used in such simulations, allowing the plasmonic properties of structurally complex nanoparticles to be better understood. However, we also note that the field is far from bringing experiment and simulation into agreement for plasmonic nanoparticles with complex compositions, reflecting analytical challenges that inhibit accurate model generation. Potential directions for addressing these challenges are also presented.

Complex dielectric function and opto-electronic characterization using VEELS for the lead-free BCZT electro-ceramic perovskite

The current work presents the complex dielectric function and the opto-electronic properties of lead-free Ba_0.8Ca_0.2Ti_0.9Zr_0.1O₃ (BCZT) electro-ceramic, derived from valence electron energy loss spectroscopy, in transmission electron microscopy (VEELS-TEM). A single tetragonal perovskite phase, with P4mm space group, was determined by Rietveld refinement of the x-ray diffraction pattern. The VEELS-TEM experiment scanned the energy interval from 0-50 eV. The spectroscopic analysis started with the chemical identification of the atoms that conforms the BCZT solid-solution. Bulk and surface plasmons were located at 27.2 eV and 12.9 eV, respectively in the energy loss function. Complex dielectric function was obtained using Kramers-Kronig analysis from the Gatan Microscopy Suite software. Dielectric constant was calculated from the real part of the complex dielectric function, while the inter-band transitions were identified in the joint density of states function. The refraction index n and the extinction coefficient k, as a function of energy, were obtained from the complex dielectric function. The bandgap energy was determined using a polynomial fit in the optical absorption coefficient plot with an E_g = 3.2 eV.

Characterization of Lithium Ion Battery Materials with Valence Electron Energy-Loss Spectroscopy

Cutting-edge research on materials for lithium ion batteries regularly focuses on nanoscale and atomic-scale phenomena. Electron energy-loss spectroscopy (EELS) is one of the most powerful ways of characterizing composition and aspects of the electronic structure of battery materials, particularly lithium and the transition metal mixed oxides found in the electrodes. However, the characteristic EELS signal from battery materials is challenging to analyze when there is strong overlap of spectral features, poor signal-to-background ratios, or thicker and uneven sample areas. A potential alternative or complementary approach comes from utilizing the valence EELS features (<20 eV loss) of battery materials. For example, the valence EELS features in LiCoO2 maintain higher jump ratios than the Li-K edge, most notably when spectra are collected with minimal acquisition times or from thick sample regions. EELS maps of these valence features give comparable results to the Li-K edge EELS maps of LiCoO2. With some spectral processing, the valence EELS maps more accurately highlight the morphology and distribution of LiCoO2 than the Li-K edge maps, especially in thicker sample regions. This approach is beneficial for cases where sample thickness or beam sensitivity limit EELS analysis, and could be used to minimize electron dosage and sample damage or contamination.

Measurement of the dielectric function of α-Al2O3 by transmission electron microscopy - Electron energy-loss spectroscopy without Cerenkov radiation effects

The dielectric function of α-Al2O3 was measured by electron energy-loss spectroscopy (EELS) coupled with the difference method. The influence of Cerenkov radiation was significant in measurements using a 200kV transmission electron microscope (TEM) and the correct dielectric function could not be obtained using the conventional EELS procedure. However, a good agreement between the optical data and EELS for the dielectric functions was obtained via a 60kV TEM. Combining EELS and the difference method, however, provided an accurate measurement of the dielectric function for α-Al2O3 even at an accelerating voltage of 200kV. The combination of EELS and the difference method in the nano-beam diffraction mode could derive an accurate dielectric function with superior spatial resolution regardless of the occurrence of Cerenkov radiation.

Density Functional Theory Modeling of Low-Loss Electron Energy-Loss Spectroscopy in Wurtzite III-Nitride Ternary Alloys

In the present work, the dielectric response of III-nitride semiconductors is studied using density functional theory (DFT) band structure calculations. The aim of this study is to improve our understanding of the features in the low-loss electron energy-loss spectra of ternary alloys, but the results are also relevant to optical and UV spectroscopy results. In addition, the dependence of the most remarkable features with composition is tested, i.e. applying Vegard's law to band gap and plasmon energy. For this purpose, three wurtzite ternary alloys, from the combination of binaries AlN, GaN, and InN, were simulated through a wide compositional range (i.e., Al x Ga1-x N, In x Al1-x N, and In x Ga1-x N, with x=[0,1]). For this DFT calculations, the standard tools found in Wien2k software were used. In order to improve the band structure description of these semiconductor compounds, the modified Becke-Johnson exchange-correlation potential was also used. Results from these calculations are presented, including band structure, density of states, and complex dielectric function for the whole compositional range. Larger, closer to experimental values, band gap energies are predicted using the novel potential, when compared with standard generalized gradient approximation. Moreover, a detailed analysis of the collective excitation features in the dielectric response reveals their compositional dependence, which sometimes departs from a linear behavior (bowing). Finally, an advantageous method for measuring the plasmon energy dependence from these calculations is explained.

Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy

High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers.